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Sökning: WFRF:(Palestri P.)

  • Resultat 1-3 av 3
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1.
  • Selmi, L., et al. (författare)
  • Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels : from advanced models for band structures, electrostatics and transport to TCAD
  • 2017
  • Ingår i: 2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). - : IEEE. - 9781538635599
  • Konferensbidrag (refereegranskat)abstract
    • We review a few state of the art solutions and recent developments to model short channel III-V compound semiconductor n-MOSFETs based on full quantum transport, semiclassical multi-valley / multi-subband transport and TCAD models. The pros and cons of each, and the insights they can deliver, are illustrated with examples from recent technology developments and literature. Areas where improvements and implementations at TCAD level are most necessary are highlighted as well.
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2.
  • Gudmundsson, Valur, et al. (författare)
  • Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model
  • 2013
  • Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 79, s. 172-178
  • Tidskriftsartikel (refereegranskat)abstract
    • We present a simple and efficient approach to implement Schottky barrier contacts in a Multi-subband Monte Carlo simulator by using the subband smoothening technique to mimic tunneling at the Schottky junction. In the absence of scattering, simulation results for Schottky barrier MOSFETs are in agreement with ballistic Non-Equilibrium Green's Functions calculations. We then include the most relevant scattering mechanisms, and apply the model to the study of double gate Schottky barrier MOSFETs representative of the ITRS 2015 high performance device. Results show that a Schottky barrier height of less than approximately 0.15 eV is required to outperform the doped source/drain structure.
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3.
  • Smith, Anderson, et al. (författare)
  • Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes
  • 2013
  • Ingår i: Nano letters (Print). - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 13:7, s. 3237-3242
  • Tidskriftsartikel (refereegranskat)abstract
    • Monolayer graphene exhibits exceptional electronic and mechanical properties, making it a very promising material for nanoelectromechanical devices. Here, we conclusively demonstrate the piezoresistive effect in graphene in a nanoelectromechanical membrane configuration that provides direct electrical readout of pressure to strain transduction. This makes it highly relevant for an important class of nanoelectromechanical system (NEMS) transducers. This demonstration is consistent with our simulations and previously reported gauge factors and simulation values. The membrane in our experiment acts as a strain gauge independent of crystallographic orientation and allows for aggressive size scalability. When compared with conventional pressure sensors, the sensors have orders of magnitude higher sensitivity per unit area.
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  • Resultat 1-3 av 3

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