| 1. |
- Metcalfe, N. B., et al.
(författare)
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Solving the conundrum of intra-specific variation in metabolic rate: A multidisciplinary conceptual and methodological toolkit New technical developments are opening the door to an understanding of why metabolic rate varies among individual animals of a species
- 2023
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Ingår i: Bioessays. - 0265-9247. ; 45:6
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Tidskriftsartikel (refereegranskat)abstract
- Researchers from diverse disciplines, including organismal and cellular physiology, sports science, human nutrition, evolution and ecology, have sought to understand the causes and consequences of the surprising variation in metabolic rate found among and within individual animals of the same species. Research in this area has been hampered by differences in approach, terminology and methodology, and the context in which measurements are made. Recent advances provide important opportunities to identify and address the key questions in the field. By bringing together researchers from different areas of biology and biomedicine, we describe and evaluate these developments and the insights they could yield, highlighting the need for more standardisation across disciplines. We conclude with a list of important questions that can now be addressed by developing a common conceptual and methodological toolkit for studies on metabolic variation in animals.
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| 2. |
- Andersen, O., et al.
(författare)
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Electrical activity of carbon-hydrogen centers in Si
- 2002
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 66:23, s. 235205-1
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Tidskriftsartikel (refereegranskat)abstract
- The electrical activity of Cs-H defects in Si has been investigated in a combined modeling and experimental study. High-resolution Laplace capacitance spectroscopy with the uniaxial stress technique has been used to measure the stress-energy tensor and the results are compared with theoretical modeling. At low temperatures, implanted H is trapped as a negative-U center with a donor level in the upper half of the gap. However, at higher temperatures, H migrates closer to the carbon impurity and the donor level falls, crossing the gap. At the same time, an acceptor level is introduced into the upper gap making the defect a positive-U center.
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| 3. |
- Andersen, O., et al.
(författare)
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Piezospectroscopic analysis of the hydrogen-carbon complexes in silicon
- 2001
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Ingår i: Physica. B, Condensed matter. - 0921-4526 .- 1873-2135. ; 308, s. 139-142
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Tidskriftsartikel (refereegranskat)abstract
- We have observed the donor (Ec-0.22 eV) and acceptor (Ec-0.16 eV) levels related to hydrogen-carbon complexes in silicon. The donor level is only detected at low temperatures after proton implantation. This hydrogen-carbon complex irreversibly reconfigures at temperatures above 225 K to a configuration characterized by the acceptor level, which is stable up to room temperature. The same acceptor level is also observed after atomic hydrogen diffusion. We have used Laplace transform deep level transient spectroscopy (DLTS) to show the influence of uniaxial stress on the electron emission process and the effect of the stress-induced alignment for the acceptor state. The pattern of the Laplace DLTS peak splittings indicate a trigonal symmetry of the defect. First principles calculations were carried out on the hydrogen-carbon defects with a view of determining their electrical levels and stress response for comparison with the experimental results.
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| 4. |
- Coutinho, J., et al.
(författare)
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Effect of stress on the energy levels of the vacancy-oxygen-hydrogen complex in Si
- 2003
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 68:18, s. 184106-1
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Tidskriftsartikel (refereegranskat)abstract
- The piezospectroscopic properties of the VOH defect in Si are found using stress Laplace deep level transient spectroscopy (DLTS) and are compared with local density-functional calculations of (i) the acceptor level and its shift under stress, and (ii) the alignment of the neutral center under stress. The theory is able to account for two acceptor levels observed for 〈100〉, 〈111〉, and 〈110〉 stress even though additional splitting is expected for a defect with static C1h symmetry. This is related to (i) a rapid reorientation of the H atom within the defect at temperatures at which the DLTS experiments are carried out, and (ii) the small effect of stress on two orientations of the defect under 〈110〉 stress. The theory is also able to give a quantitative account of the alignment of the center. The effect of stress on the reorientation barrier of the defect is also investigated. The reorientation barrier of the defect in its positive charge state is found theoretically to be very small, consistent with the lack of any splitting in the donor level under stress.
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| 5. |
- Markevich, V.P., et al.
(författare)
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Electronic properties of vacancy-oxygen complexes in SiGe alloys
- 2003
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Ingår i: Physica. B, Condensed matter. - : Elsevier BV. - 0921-4526 .- 1873-2135. ; 340, s. 790-4
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Tidskriftsartikel (refereegranskat)abstract
- Capacitance transient techniques, combined with ab initio modeling, were employed to study the electronic properties and structure of vacancy-oxygen (VO) complexes in unstrained Czochralski-grown Si1-xGex crystals (0
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| 6. |
- Markevich, V.P., et al.
(författare)
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Reconfigurations and diffusion of trivacancy in silicon
- 2012
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Ingår i: Physica. B, Condensed matter. - : Elsevier BV. - 0921-4526 .- 1873-2135. ; 107:15, s. 2974-2977
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Tidskriftsartikel (refereegranskat)abstract
- Disappearance of the divacancy (V2) and trivacancy (V3) complexes upon isochronal and isothermal annealing of electron irradiated Si:O crystals has been studied by means of deep level transient spectroscopy. The annealing studies have shown that the V2 and V3 defects are mobile in Si at T>200 °C and in oxygen-rich material are trapped by interstitial oxygen atoms so resulting in the appearance of V2O and V3O defects. The activation energies for diffusion of the V2 and V3 centers have been determined. Density functional modeling calculations have been carried out to investigate the migration and reorientation mechanisms of V3 in large silicon supercells. It is proposed that these comprise a sequence of transformations between V3(D3) and V3(C2v) configurations.
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| 7. |
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| 8. |
- Murin, L. I., et al.
(författare)
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The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells?
- 2011
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 98:18
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Tidskriftsartikel (refereegranskat)abstract
- It is widely believed that the light induced degradation of crystalline silicon solar cells is due to the formation of a BsO2i recombination center created by the optically excited migration of the oxygen dimer (charge-state-driven motion). In this letter the concentration dependence of the neutral state of O-2i on [O-i] in p- and n-type Cz-Si has been determined using infrared absorption. A systematic search for the absorption signature of the dimer in the doubly positively charged state has been unsuccessful. These data strongly suggest that charge-state-driven motion (Bourgoin-Corbett mechanism) of the oxygen dimer cannot occur in typical solar silicon and hence bring into question the accepted degradation mechanism. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3584138]
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| 9. |
- Coutinho, Jose, et al.
(författare)
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Electronic and dynamical properties of the silicon trivacancy
- 2012
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 86:17
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Tidskriftsartikel (refereegranskat)abstract
- The trivacancy (V3) in silicon has been recently shown to be a bistable center in the neutral charge state, with a fourfold-coordinated configuration, V3[FFC], lower in energy than the (110) planar one [ V. P. Markevich et al. Phys. Rev. B 80 235207 (2009)]. Transformations of the V3 defect between different configurations, its diffusion, and disappearance upon isochronal and isothermal annealing of electron-irradiated Si:O crystals are reported from joint deep level transient spectroscopy measurements and first-principles density-functional calculations. Activation energies and respective mechanisms for V3 transformation from the (110) planar configuration to the fourfold-coordinated structure have been determined. The annealing studies demonstrate that V3 is mobile in Si at T>200 ∘C and in oxygen-rich material can be trapped by interstitial oxygen atoms so resulting in the appearance of V3O complexes. The calculations suggest that V3 motion takes place via consecutive FFC/planar transformation steps. The activation energy for the long-range diffusion of the V3 center has been derived and agrees with atomic motion barrier from the calculations
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| 10. |
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