| 1. |
- Andersson, Anton, et al.
(författare)
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Design of a Foiling Optimist
- 2018
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Ingår i: Journal of Sailboat Technology. ; 2018, s. 1-24
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Tidskriftsartikel (refereegranskat)abstract
- Because of the successful application of hydrofoils on the America's Cup catamarans in the past two campaigns the interest in foiling sailing craft has boosted. Foils have been fitted to a large number of yachts with great success, ranging from dinghies to ocean racers. An interesting question is whether one of the slowest racing boats in the world, the Optimist dinghy, can foil, and if so, at what minimum wind speed. The present paper presents a comprehensive design campaign to answer the two questions. The campaign includes a newly developed Velocity Prediction Program (VPP) for foiling/non-foiling conditions, a wind tunnel test of sail aerodynamics, a towing tank test of hull hydrodynamics and a large number of numerical predictions of foil characteristics. An optimum foil configuration is developed and towing tank tested with satisfactory results. The final proof of the concept is a successful on the water test with stable foiling at a speed of 12 knots.
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| 2. |
- Kehoe, Laura, et al.
(författare)
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Make EU trade with Brazil sustainable
- 2019
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Ingår i: Science. - : American Association for the Advancement of Science (AAAS). - 0036-8075 .- 1095-9203. ; 364:6438, s. 341-
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)
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| 3. |
- Moberg, Christina, et al.
(författare)
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De unga gör helt rätt när de stämmer staten
- 2022
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Ingår i: Aftonbladet. - 1103-9000.
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Tidskriftsartikel (populärvet., debatt m.m.)abstract
- 1 620 forskare och lärare i forskarvärlden: Vi ställer oss bakom Auroras klimatkrav
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| 4. |
- Persson, Anton E.O., et al.
(författare)
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Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
- 2020
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 116:6
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Tidskriftsartikel (refereegranskat)abstract
- Deposition, annealing, and integration of ferroelectric Hf x Zr 1 - x O 2 (HZO) thin films on the high-mobility semiconductor InAs using atomic layer deposition are investigated. Electrical characterization reveals that the HZO films on InAs exhibit an enhanced remanent polarization compared to films formed on a reference TiN substrate, exceeding 20 μ C / cm 2 even down to an annealing temperature of 370 °C. For device applications, the thermal processes required to form the ferroelectric HZO phase must not degrade the high-κ/InAs interface. We find by evaluation of the capacitance-voltage characteristics that the electrical properties of the high-κ/InAs are not significantly degraded by the annealing process, and high-resolution transmission electron microscopy verifies a maintained sharp high-κ/InAs interface.
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| 5. |
- Andersen, André, et al.
(författare)
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As-deposited ferroelectric HZO on a III–V semiconductor
- 2022
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 121:1, s. 012901-012901
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Tidskriftsartikel (refereegranskat)abstract
- By electrical characterization of thin films deposited by atomic layer deposition, HfxZr1−xO2 (HZO) is shown to be ferroelectric as-deposited, i.e., without any annealing step, using a thermal budget of 300 °C. By fabricating laminated HZO films rather than the traditional solid-solution HZO, a remanent polarization of Pr = 11 μC/cm2 and endurance exceeding 106 are obtained. Films grown on thermally reactive InAs semiconductor substrates showed capacitance–voltage modulation and hysteresis, which varied depending on interfacial oxide construction. Additionally, a trade-off between higher polarization and lower gate leakage was found when comparing different laminate structures and deposition temperatures. Scaling the thickness of the laminated oxides revealed that films remain ferroelectric at 6.5 nm with an increased breakdown field for thinner devices.
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| 6. |
- Athle, Robin, et al.
(författare)
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Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1-xZrxO2
- 2021
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Ingår i: ACS applied materials & interfaces. - : American Chemical Society (ACS). - 1944-8244 .- 1944-8252. ; 13:9, s. 11089-11095
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Tidskriftsartikel (refereegranskat)abstract
- Ferroelectric memories based on hafnium oxide are an attractive alternative to conventional memory technologies due to their scalability and energy efficiency. However, there are still many open questions regarding the optimal material stack and processing conditions for reliable device performance. Here, we report on the impact of the sputtering process conditions of the commonly used TiN top electrode on the ferroelectric properties of Hf1-xZrxO2. By manipulating the deposition pressure and chemistry, we control the preferential orientation of the TiN grains between (111) and (002). We observe that (111) textured TiN is superior to (002) texturing for achieving high remanent polarization (Pr). Furthermore, we find that additional nitrogen supply during TiN deposition leads to >5× greater endurance, possibly by limiting the scavenging of oxygen from the Hf1-xZrxO2 film. These results help explain the large Pr variation reported in the literature for Hf1-xZrxO2/TiN and highlights the necessity of tuning the top electrode of the ferroelectric stack for successful device implementation.
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| 7. |
- Athle, Robin, et al.
(författare)
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Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
- 2022
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Ingår i: Advanced Materials Interfaces. - : Wiley. - 2196-7350. ; 9:27
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Tidskriftsartikel (refereegranskat)abstract
- Ferroelectric HfxZr1–xO2 (HZO) is typically achieved by crystallization of an amorphous thin film via rapid thermal processing (RTP) at time scales of seconds to minutes. For integration on III–V semiconductors, this approach can severely degrade the sensitive HZO/III–V interface. To evaluate whether a reduced thermal budget can improve the interface quality, millisecond duration thermal anneals are utilized using a flash lamp annealer (FLA) on HZO/InAs capacitors. Through thorough electrical characterization such as polarization hysteresis, endurance, and capacitance-voltage measurements, as well as synchrotron-based chemical interface characterization, the FLA and RTP treatments are compared and the FLA results are found in lower interface defect density and higher endurance, but also have generally lower remanent polarization (Pr) compared to RTP. Additionally, ways to achieve high Pr and low interface defect density using multiple lower energy flashes, as well as by pre-crystallization during the ALD growth step are investigated. Using FLA, Pr exceeding 20 µC cm−2 is achieved, with extended endurance properties compared to RTP treatment and a considerably decreased defect density, indicative of a higher quality HZO/InAs interface. This work presents valuable insight into the successful integration of ferroelectric HZO on low thermal budget III–V semiconductors.
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| 8. |
- Athle, Robin, et al.
(författare)
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Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf1- xZrxO2
- 2022
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Ingår i: ACS Applied Electronic Materials. - : American Chemical Society (ACS). - 2637-6113. ; 4:3, s. 1002-1009
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Tidskriftsartikel (refereegranskat)abstract
- Ferroelectric tunnel junctions (FTJs) based on ultrathin HfO2 have great potential as a fast and energy-efficient memory technology compatible with complementary metal oxide semiconductors. FTJs consist of a ferroelectric film sandwiched between two distinct electrodes, the properties of which are intricately linked to the electrical properties of the FTJs. Here we utilize a W crystallization electrode (CE) to achieve a high and reproducible remanent polarization, combined with a metal replacement process in which the W is carefully removed and replaced by another top electrode (TE). In this way we separate the ferroelectric film properties from the device design and can thereby evaluate the effect of the TE work function (WF) and conduction band electron density (ne) on the tunneling electroresistance (TER) and device reliability. We compare FTJs designed with a TiN bottom electrode and W, Cr, or Ni TE and find that the use of high electron density metals such as Ni or Cr as TE allows for an improved TER, albeit at the cost of reliability due to a large built-in electric field. To bypass this effect, a bilayer Cr/Ni TE is implemented, which allows for a high TER and minimal built-in field, leading to excellent retention and endurance beyond 108 cycles. The results presented here thus highlight a process flow for reliable design and implementation of FTJs.
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| 9. |
- Cederwall, Bo, et al.
(författare)
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Evidence for a spin-aligned neutron-proton paired phase from the level structure of 92Pd
- 2011
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Ingår i: Nature. - : Springer Science and Business Media LLC. - 0028-0836 .- 1476-4687. ; 469:7328, s. 68-71
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Tidskriftsartikel (refereegranskat)abstract
- Shell structure and magic numbers in atomic nuclei were generally explained by pioneering work(1) that introduced a strong spin-orbit interaction to the nuclear shell model potential. However, knowledge of nuclear forces and the mechanisms governing the structure of nuclei, in particular far from stability, is still incomplete. In nuclei with equal neutron and proton numbers (N = Z), enhanced correlations arise between neutrons and protons (two distinct types of fermions) that occupy orbitals with the same quantum numbers. Such correlations have been predicted to favour an unusual type of nuclear superfluidity, termed isoscalar neutron-proton pairing(2-6), in addition to normal isovector pairing. Despite many experimental efforts, these predictions have not been confirmed. Here we report the experimental observation of excited states in the N = Z = 46 nucleus Pd-92. Gamma rays emitted following the Ni-58(Ar-36,2n)Pd-92 fusion-evaporation reaction were identified using a combination of state-of-the-art high-resolution c-ray, charged-particle and neutron detector systems. Our results reveal evidence for a spin-aligned, isoscalar neutron-proton coupling scheme, different from the previous prediction(2-6). We suggest that this coupling scheme replaces normal superfluidity (characterized by seniority coupling(7,8)) in the ground and low-lying excited states of the heaviest N = Z nuclei. Such strong, isoscalar neutron-proton correlations would have a considerable impact on the nuclear level structure and possibly influence the dynamics of rapid proton capture in stellar nucleosynthesis.
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| 10. |
- Dahlberg, Hannes, et al.
(författare)
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Ferroelectric-Antiferroelectric Transition of Hf1- xZrxO2on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2
- 2022
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Ingår i: ACS Applied Electronic Materials. - : American Chemical Society (ACS). - 2637-6113. ; 4:12, s. 6357-6363
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Tidskriftsartikel (refereegranskat)abstract
- The ferroelectric (FE)-antiferroelectric (AFE) transition in Hf1-xZrxO2 (HZO) is for the first time shown in a metal-ferroelectric-semiconductor (MFS) stack based on the III-V material InAs. As InAs displays excellent electron mobility and a narrow band gap, the integration of ferroelectric thin films for nonvolatile operations is highly relevant for future electronic devices and motivates further research on ferroelectric integration. When increasing the Zr fraction x from 0.5 to 1, the stack permittivity increases as expected, and the transition from FE to AFE-like behavior is observed by polarization and current-voltage characteristics. At x = 0.8 the polarization of the InAs-based stacks shows a larger FE-contribution as a more open hysteresis compared to both literature and reference metal-ferroelectric-metal (MFM) devices. By field-cycling the devices, the switching domains are studied as a function of the cycle number, showing that the difference in FE-AFE contributions for MFM and MFS devices is stable over switching and not an effect of wake-up. The FE contribution of the switching can be accessed by successively lowering the bias voltage in a proposed pulse train. The possibility of enhanced nonvolatility in Zr-rich HZO is relevant for device stacks that would benefit from an increase in permittivity and a lower operating voltage. Additionally, an interfacial layer (IL) is introduced between the HZO film and the InAs substrate. The interfacial quality is investigated as frequency-dependent capacitive dispersion, showing little change for varying ZrO2 concentrations and with or without included IL. This suggests material processing that is independently limiting the interfacial quality. Improved endurance of the InAs-Hf1-xZrxO2 devices with x = 0.8 was also observed compared to x = 0.5, with further improvement with the additional IL for Zr-rich HZO on InAs.
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