| 1. |
- Kehoe, Laura, et al.
(författare)
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Make EU trade with Brazil sustainable
- 2019
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Ingår i: Science. - : American Association for the Advancement of Science (AAAS). - 0036-8075 .- 1095-9203. ; 364:6438, s. 341-
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)
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| 2. |
- Eklund, Per, et al.
(författare)
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Structural, electrical, and mechanical properties of nc-TiC/a-SiC nanocomposite thin films
- 2005
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Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 23:6, s. 2486-2495
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Tidskriftsartikel (refereegranskat)abstract
- We have synthesized Ti–Si–C nanocomposite thin films by dc magnetron sputtering from a Ti3SiC2 compound target in an Ar discharge on Si(100), Al2O3(0001), and Al substrates at temperatures from room temperature to 300 °C. Electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy showed that the films consisted of nanocrystalline (nc-) TiC and amorphous (a-) SiC, with the possible presence of a small amount of noncarbidic C. The growth mode was columnar, yielding a nodular film-surface morphology. Mechanically, the films exhibited a remarkable ductile behavior. Their nanoindentation hardness and E-modulus values were 20 and 290 GPa, respectively. The electrical resistivity was 330 µ cm for optimal Ar pressure (4 mTorr) and substrate temperature (300 °C). The resulting nc-TiC/a-SiC films performed well as electrical contact material. These films' electrical-contact resistance against Ag was remarkably low, 6 µ at a contact force of 800 N compared to 3.2 µ for Ag against Ag. The chemical stability of the nc-TiC/a-SiC films was excellent, as shown by a Battelle flowing mixed corrosive-gas test, with no N, Cl, or S contaminants entering the bulk of the films.
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| 3. |
- Emmerlich, Jens, 1974-, et al.
(författare)
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Growth of Ti3SiC2 thin films by elemental target magnetron sputtering
- 2004
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 96:9, s. 4817-4826
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial Ti3SiC2(0001) thin films have been deposited by dc magnetron sputtering from three elemental targets of Ti, C, and Si onto MgO(111) and Al2O3(0001) substrates at temperatures of 800–900 °C. This process allows composition control to synthesize Mn + 1AXn (MAX) phases (M: early transition metal; A: A-group element; X: C and/or N; n = 1–3) including Ti4SiC3. Depositions on MgO(100) substrates yielding the Ti–Si–C MAX phases with (105), as the preferred orientation. Samples grown at different substrate temperatures, studied by means of transmission electron microscopy and x-ray diffraction investigations, revealed the constraints of Ti3SiC2 nucleation due to kinetic limitations at substrate temperatures below 700 °C. Instead, there is a competitive TiCx growth with Si segregation to form twin boundaries or Si substitutional incorporation in TiCx. Physical properties of the as-deposited single-crystal Ti3SiC2 films were determined. A low resistivity of 25 µ cm was measured. The Young's modulus, ascertained by nanoindentation, yielded a value of 343–370 GPa. For the mechanical deformation response of the material, probing with cube corner and Berkovich indenters showed an initial high hardness of almost 30 GPa. With increased maximum indentation loads, the hardness was observed to decrease toward bulk values as the characteristic kink formation sets in with dislocation ordering and delamination at basal planes.
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| 4. |
- Hsiao, Ching-Lien, et al.
(författare)
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Room-temperature heteroepitaxy of single-phase Al1-xInxN films with full composition range on isostructural wurtzite templates
- 2012
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Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 524, s. 113-120
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Tidskriftsartikel (refereegranskat)abstract
- Al1-xInxN heteroepitaxial layers covering the full composition range have been realized by magnetron sputter epitaxy on basal-plane AlN, GaN, and ZnO templates at room temperature (RT). Both Al1-xInxN single layers and multilayers grown on these isostructural templates show single phase, single crystal wurtzite structure. Even at large lattice mismatch between the film and the template, for instance InN/AlN (similar to 13% mismatch), heteroepitaxy is achieved. However, RT-grown Al1-xInxN films directly deposited on non-isostructural c-plane sapphire substrate exhibit a polycrystalline structure for all compositions, suggesting that substrate surface structure is important for guiding the initial nucleation. Degradation of Al1-xInxN structural quality with increasing indium content is attributed to the formation of more point-and structural defects. The defects result in a prominent hydrostatic tensile stress component, in addition to the biaxial stress component introduced by lattice mismatch, in all RT-grown Al1-xInxN films. These effects are reflected in the measured in-plane and out-of-plane strains. The effect of hydrostatic stress is negligible compared to the effects of lattice mismatch in high-temperature grown AlN layers thanks to their low amount of defects. We found that Vegards rule is applicable to determine x in the RT-grown Al1-xInxN epilayers if the lattice constants of RT-sputtered AlN and InN films are used instead of those of the strain-free bulk materials.
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| 5. |
- Hudson, Lawrence N, et al.
(författare)
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The database of the PREDICTS (Projecting Responses of Ecological Diversity In Changing Terrestrial Systems) project
- 2017
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Ingår i: Ecology and Evolution. - : John Wiley & Sons. - 2045-7758. ; 7:1, s. 145-188
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Tidskriftsartikel (refereegranskat)abstract
- The PREDICTS project-Projecting Responses of Ecological Diversity In Changing Terrestrial Systems (www.predicts.org.uk)-has collated from published studies a large, reasonably representative database of comparable samples of biodiversity from multiple sites that differ in the nature or intensity of human impacts relating to land use. We have used this evidence base to develop global and regional statistical models of how local biodiversity responds to these measures. We describe and make freely available this 2016 release of the database, containing more than 3.2 million records sampled at over 26,000 locations and representing over 47,000 species. We outline how the database can help in answering a range of questions in ecology and conservation biology. To our knowledge, this is the largest and most geographically and taxonomically representative database of spatial comparisons of biodiversity that has been collated to date; it will be useful to researchers and international efforts wishing to model and understand the global status of biodiversity.
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| 6. |
- Höglund, Carina, et al.
(författare)
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Effects of volume mismatch and electronic structure on the decomposition of ScAlN and TiAlN solid solutions
- 2010
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 81:22, s. 224101-
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Tidskriftsartikel (refereegranskat)abstract
- Thin solid films of metastable rocksalt structure (c-) Sc1-xAlxN and Ti1-xAlxN were employed as model systems to investigate the relative influence of volume mismatch and electronic structure driving forces for phase separation. Reactive dual magnetron sputtering was used to deposit stoichiometric Sc0.57Al0.43N(111) and Ti0.51Al0.49N(111) thin films, at 675 °C and 600 °C, respectively, followed by stepwise annealing to a maximum temperature of 1100 °C. Phase transformations during growth and annealing were followed in situ using X-ray scattering. The results show that the as-deposited Sc0.57Al0.43N films phase separate at 1000 °C – 1100 °C into non-isostructural c-ScN and wurtzite-structure (w-) AlN, via nucleation and growth at domain boundaries. Ti0.51Al0.49N, however, exhibits spinodal decomposition into isostructural coherent c-TiN and c-AlN, in the temperature interval of 800 °C – 1000 °C. X-ray pole figures show the coherency between c-ScN and w-AlN, with AlN(0001) || ScN(001) and AlN<01ɸ10> || ScN<1ɸ10>. First principles calculations of mixing energy-lattice spacing curves explain the results on a fundamental physics level and open a route for design of novel metastable pseudobinary phases for hard coatings and electronic materials.
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| 7. |
- Junaid, Muhammad, et al.
(författare)
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Electronic-grade GaN(0001)/Al2O3(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target
- 2011
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Ingår i: Applied Physics Letters. - : American Institute of Physics. - 0003-6951 .- 1077-3118. ; 98:14, s. 141915-
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Tidskriftsartikel (refereegranskat)abstract
- Electronic-grade GaN (0001) epilayers have been grown directly on Al2O3 (0001) substrates by reactive DC-magnetron sputter epitaxy (MSE) from a liquid Ga sputtering target in an Ar/N2 atmosphere. The as-grown GaN epitaxial film exhibit low threading dislocation density on the order of ≤ 1010 cm-2 obtained by transmission electron microscopy and modified Williamson-Hall plot. X-ray rocking curve shows narrow fullwidth at half maximum (FWHM) of 1054 arcsec of the 0002 reflection. A sharp 4 K photoluminescence peak at 3.474 eV with a FWHM of 6.3 meV is attributed to intrinsic GaN band edge emission. The high structural and optical qualities indicate that MSEgrown GaN epilayers can be used for fabricating high-performance devices without the need of any buffer layer.
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| 8. |
- Junaid, Muhammad, et al.
(författare)
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Epitaxial Growth of GaN (0001)/Al2O3 (0001) by Reactive High Power Impulse Magnetron Sputter Deposition
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- Epitaxial GaN (0001) thin films were grown on Al2O3 (0001) substrates by reactive high power impulse magnetron sputtering of liquid Ga targets in a mixed N2/Ar discharge. A combination of x-ray diffraction, electron microscopy, atomic force microscopy, μ-Raman mapping and spectroscopy, μ-photoluminescence, time of flight elastic recoil detection, and cathodoluminescence showed the formation of relaxed and strained domains in the same films. While the strained domains form due to ion bombardment during growth, the relaxed domains exhibit
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| 9. |
- Khatibi, Ali, et al.
(författare)
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Face-Centered Cubic (Al1-xCrx)2O3
- 2011
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Ingår i: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 519:8, s. 2426-2429
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Tidskriftsartikel (refereegranskat)abstract
- We report the discovery of a face-centered cubic (Al1−xCrx)2O3 solid solution [0.60bxb0.70] in films grownonto Si substrates using reactive radio frequency magnetron sputtering from Al and Cr targets at 400 °C. Theproposed structure is NaCl-like with 33% vacancies on the metal sites. The unit cell parameter is 4.04 Å asdetermined by X-ray diffraction. The films have a b100N preferred crystallographic orientation and exhibithardness values up to 26 GPa and an elastic modulus of 220–235 GPa.
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| 10. |
- Lindh, Linnea, et al.
(författare)
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Dye-sensitized solar cells based on Fe N-heterocyclic carbene photosensitizers with improved rod-like push-pull functionality
- 2021
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Ingår i: Chemical Science. - : Royal Society of Chemistry (RSC). - 2041-6520 .- 2041-6539. ; 12:48, s. 16035-16053
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Tidskriftsartikel (refereegranskat)abstract
- A new generation of octahedral iron(ii)-N-heterocyclic carbene (NHC) complexes, employing different tridentate C^N^C ligands, has been designed and synthesized as earth-abundant photosensitizers for dye sensitized solar cells (DSSCs) and related solar energy conversion applications. This work introduces a linearly aligned push-pull design principle that reaches from the ligand having nitrogen-based electron donors, over the Fe(ii) centre, to the ligand having an electron withdrawing carboxylic acid anchor group. A combination of spectroscopy, electrochemistry, and quantum chemical calculations demonstrate the improved molecular excited state properties in terms of a broader absorption spectrum compared to the reference complex, as well as directional charge-transfer displacement of the lowest excited state towards the semiconductor substrate in accordance with the push-pull design. Prototype DSSCs based on one of the new Fe NHC photosensitizers demonstrate a power conversion efficiency exceeding 1% already for a basic DSSC set-up using only the I−/I3−redox mediator and standard operating conditions, outcompeting the corresponding DSSC based on the homoleptic reference complex. Transient photovoltage measurements confirmed that adding the co-sensitizer chenodeoxycholic acid helped in improving the efficiency by increasing the electron lifetime in TiO2. Time-resolved spectroscopy revealed spectral signatures for successful ultrafast (<100 fs) interfacial electron injection from the heteroleptic dyes to TiO2. However, an ultrafast recombination process results in undesirable fast charge recombination from TiO2back to the oxidized dye, leaving only 5-10% of the initially excited dyes available to contribute to a current in the DSSC. On slower timescales, time-resolved spectroscopy also found that the recombination dynamics (longer than 40 μs) were significantly slower than the regeneration of the oxidized dye by the redox mediator (6-8 μs). Therefore it is the ultrafast recombination down to fs-timescales, between the oxidized dye and the injected electron, that remains as one of the main bottlenecks to be targeted for achieving further improved solar energy conversion efficiencies in future work.
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