| 1. |
- Amloy, Supaluck, et al.
(författare)
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Excitons and biexcitons in InGaN quantum dot like localization centers
- 2014
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 25:49, s. 495702-
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Tidskriftsartikel (refereegranskat)abstract
- Indium segregation in a narrow InGaN single quantum well creates quantum dot (QD) like exciton localization centers. Cross-section transmission electron microscopy reveals varying shapes and lateral sizes in the range ∼1–5 nm of the QD-like features, while scanning near field optical microscopy demonstrates a highly inhomogeneous spatial distribution of optically active individual localization centers. Microphotoluminescence spectroscopy confirms the spectrally inhomogeneous distribution of localization centers, in which the exciton and the biexciton related emissions from single centers of varying geometry could be identified by means of excitation power dependencies. Interestingly, the biexciton binding energy (Ebxx) was found to vary from center to center, between 3 to −22 meV, in correlation with the exciton emission energy. Negative binding energies are only justified by a three-dimensional quantum confinement, which confirms QD-like properties of the localization centers. The observed energy correlation is proposed to be understood as variations of the lateral extension of the confinement potential, which would yield smaller values of Ebxx for reduced lateral extension and higher exciton emission energy. The proposed relation between lateral extension and Ebxx is further supported by the exciton and the biexciton recombination lifetimes of a single QD, which suggest a lateral extension of merely ∼3 nm for a QD with strongly negative Ebxx = −15.5 meV.
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| 2. |
- Hsiao, Ching-Lien, et al.
(författare)
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Composition tunable Al1-xInxN nanorod arrays grown by ultra-high-vacuum magnetron sputter epitaxy
- 2011
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- Self-assembled ternary Al1-xInxN nanorod arrays with variable In concentration, 0.10 ≤ x ≤ 0.32 have been realized onto c-plane sapphire substrates by ultra-high-vacuum magnetron sputter epitaxy with Ti0.21Zr0.79N or VN seed layers assistance. The formation of nanorods was very sensitive to the applied seed layer. Without proper seed layer assistance a continuous Al1-xInxN film was grown. The nanorods exhibit hexagonal crosssections with preferential growth along the c axis. A coaxial rod structure with higher In concentration in the core was observed by (scanning) transmission electron microscopy in combination with low-loss electron energy loss spectroscopy and energy dispersive xray spectroscopy. 5 K cathodoluminescence spectroscopy of Al0.86In0.14N nanorods revealed band edge emission at ~5.46 eV, which was accompanied by a strong defectrelated emission at ~ 3.38 eV.
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| 3. |
- Lu, Jun, 1962-, et al.
(författare)
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Tin+1Cn MXenes with fully saturated and thermally stable Cl terminations
- 2019
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Ingår i: Nanoscale Advances. - : Royal Society of Chemistry. - 2516-0230. ; 1:9, s. 3680-3685
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Tidskriftsartikel (refereegranskat)abstract
- MXenes are a rapidly growing family of 2D materials that exhibit a highly versatile structure and composition, allowing for significant tuning of the materials properties. These properties are, however, ultimately limited by the surface terminations, which are typically a mixture of species, including F and O that are inherent to the MXene processing. Other and robust terminations are lacking. Here, we apply high-resolution scanning transmission electron microscopy (STEM), corresponding image simulations and first-principles calculations to investigate the surface terminations on MXenes synthesized from MAX phases through Lewis acidic melts. The results show that atomic Cl terminates the synthesized MXenes, with mere residual presence of other termination species. Furthermore, in situ STEM-electron energy loss spectroscopy (EELS) heating experiments show that the Cl terminations are stable up to 750 degrees C. Thus, we present an attractive new termination that widely expands the MXenes functionalization space and enables new applications.
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| 4. |
- Dahlqvist, Martin, et al.
(författare)
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Out-Of-Plane Ordered Laminate Borides and Their 2D Ti-Based Derivative from Chemical Exfoliation
- 2021
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Ingår i: Advanced Materials. - : Wiley-VCH Verlagsgesellschaft. - 0935-9648 .- 1521-4095. ; 33:38
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Tidskriftsartikel (refereegranskat)abstract
- Exploratory theoretical predictions in uncharted structural and compositional space are integral to materials discoveries. Inspired by M5SiB2 (T2) phases, the finding of a family of laminated quaternary metal borides, M M-4 SiB2, with out-of-plane chemical order is reported here. 11 chemically ordered phases as well as 40 solid solutions, introducing four elements previously not observed in these borides are predicted. The predictions are experimentally verified for Ti4MoSiB2, establishing Ti as part of the T2 boride compositional space. Chemical exfoliation of Ti4MoSiB2 and select removal of Si and MoB2 sub-layers is validated by derivation of a 2D material, TiOxCly, of high yield and in the form of delaminated sheets. These sheets have an experimentally determined direct band gap of approximate to 4.1 eV, and display characteristics suitable for supercapacitor applications. The results take the concept of chemical exfoliation beyond currently available 2D materials, and expands the envelope of 3D and 2D candidates, and their applications.
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| 5. |
- Ding, Haoming, et al.
(författare)
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Synthesis of MAX phases Nb2CuC and Ti2(Al0.1Cu0.9)N by A-site replacement reaction in molten salts
- 2019
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Ingår i: Materials Research Letters. - : Taylor & Francis. - 2166-3831. ; 7:12, s. 510-516
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Tidskriftsartikel (refereegranskat)abstract
- New MAX phases Ti2(AlxCu1−x)N and Nb2CuC were synthesized by A-site replacement by reacting Ti2AlN and Nb2AlC, respectively, with CuCl2 or CuI molten salt. X-ray diffraction, scanning electron microscopy, and atomically resolved scanning transmission electron microscopy showed complete A-site replacement in Nb2AlC, which lead to the formation of Nb2CuC. However, the replacement of Al in Ti2AlN phase was only close to complete at Ti2(Al0.1Cu0.9)N. Density-functional theory calculations corroborated the structural stability of Nb2CuC and Ti2CuN phases. Moreover, the calculated cleavage energy in these Cu-containing MAX phases are weaker than in their Al-containing counterparts.The preparation of MAX phases Nb2CuC and Ti2(Al0.1Cu0.9)N were realized by A-site replacement in Ti2AlN and Nb2AlN, respectively.
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| 6. |
- Eklund, Per, et al.
(författare)
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Structural, electrical, and mechanical properties of nc-TiC/a-SiC nanocomposite thin films
- 2005
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Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 23:6, s. 2486-2495
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Tidskriftsartikel (refereegranskat)abstract
- We have synthesized Ti–Si–C nanocomposite thin films by dc magnetron sputtering from a Ti3SiC2 compound target in an Ar discharge on Si(100), Al2O3(0001), and Al substrates at temperatures from room temperature to 300 °C. Electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy showed that the films consisted of nanocrystalline (nc-) TiC and amorphous (a-) SiC, with the possible presence of a small amount of noncarbidic C. The growth mode was columnar, yielding a nodular film-surface morphology. Mechanically, the films exhibited a remarkable ductile behavior. Their nanoindentation hardness and E-modulus values were 20 and 290 GPa, respectively. The electrical resistivity was 330 µ cm for optimal Ar pressure (4 mTorr) and substrate temperature (300 °C). The resulting nc-TiC/a-SiC films performed well as electrical contact material. These films' electrical-contact resistance against Ag was remarkably low, 6 µ at a contact force of 800 N compared to 3.2 µ for Ag against Ag. The chemical stability of the nc-TiC/a-SiC films was excellent, as shown by a Battelle flowing mixed corrosive-gas test, with no N, Cl, or S contaminants entering the bulk of the films.
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| 7. |
- Gogova, Daniela, et al.
(författare)
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Epitaxial growth of β -Ga 2 O 3 by hot-wall MOCVD
- 2022
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Ingår i: AIP Advances. - : AIP Publishing. - 2158-3226. ; 12:5, s. 055022-055022
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Tidskriftsartikel (refereegranskat)abstract
- The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown to enable superior material quality and highperformance devices based on wide bandgap semiconductors, such as Ga(Al)N and SiC, has been applied to the epitaxial growth ofβ-Ga2O3. Epitaxial β-Ga2O3 layers at high growth rates (above 1 μm/h), at low reagent flows, and at reduced growth temperatures(740 ○C) are demonstrated. A high crystalline quality epitaxial material on a c-plane sapphire substrate is attained as corroborated by a combination of x-ray diffraction, high-resolution scanning transmission electron microscopy, and spectroscopic ellipsometry measurements. Thehot-wall MOCVD process is transferred to homoepitaxy, and single-crystalline homoepitaxial β-Ga2O3 layers are demonstrated with a 201 ¯rocking curve width of 118 arc sec, which is comparable to those of the edge-defined film-fed grown (201) ¯ β-Ga2O3 substrates, indicative ofsimilar dislocation densities for epilayers and substrates. Hence, hot-wall MOCVD is proposed as a prospective growth method to be furtherexplored for the fabrication of β-Ga2O3
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| 8. |
- Gustafsson, Anders, et al.
(författare)
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Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures
- 2024
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Ingår i: Nanotechnology. - : IOP Publishing Ltd. - 0957-4484 .- 1361-6528. ; 35:25
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Tidskriftsartikel (refereegranskat)abstract
- We have investigated the optical properties of heterostructured InGaN platelets aiming at red emission, intended for use as nano-scaled light-emitting diodes. The focus is on the presence of non-radiative emission in the form of dark line defects. We have performed the study using hyperspectral cathodoluminescence imaging. The platelets were grown on a template consisting of InGaN pyramids, flattened by chemical mechanical polishing. These templates are defect free, whereas the dark line defects are introduced in the lower barrier and tend to propagate through all the subsequent layers, as revealed by the imaging of different layers in the structure. We conclude that the dark line defects are caused by stacking mismatch boundaries introduced by multiple seeding and step bunching at the edges of the as-polished, dome shaped templates. To avoid these defects, we suggest that the starting material must be flat rather than dome shaped.
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| 9. |
- Halim, Joseph, 1985-, et al.
(författare)
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Synthesis of Two-Dimensional Nb1.33C (MXene) with Randomly Distributed Vacancies by Etching of the Quaternary Solid Solution (Nb2/3Sc1/3)2AlC MAX Phase
- 2018
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Ingår i: ACS Applied Nano Materials. - : American Chemical Society (ACS). - 2574-0970. ; 1:6, s. 2455-2460
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Tidskriftsartikel (refereegranskat)abstract
- Introducing point defects in two-dimensional (2D) materials can alter or enhance their properties. Here, we demonstrate how etching a laminated (Nb2/3Sc1/3)2AlC MAX phase (solid solution) of both the Sc and Al atoms results in a 2D Nb1.33C material (MXene) with a large number of vacancies and vacancy clusters. This method is applicable to any quaternary, or higher, MAX phase, wherein one of the transition metals is more reactive than the other and could be of vital importance in applications such as catalysis and energy storage. We also report, for the first time, on the existence of solid solution (Nb2/3Sc1/3)3AlC2 and (Nb2/3Sc1/3)4AlC3 phases.
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| 10. |
- Hsiao, Ching-Lien, et al.
(författare)
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Curved-Lattice Epitaxial Growth of InxAl1-xN Nanospirals with Tailored Chirality
- 2015
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Ingår i: Nano letters (Print). - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 15:1, s. 294-300
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Tidskriftsartikel (refereegranskat)abstract
- Chirality, tailored by external morphology and internal composition, has been realized by controlled curved-lattice epitaxial growth (CLEG) of uniform coatings of single-crystalline InxAl1-xN nanospirals. The nanospirals are formed by sequentially stacking segments of curved nanorods on top of each other, where each segment is incrementally rotated around the spiral axis. By controlling the growth rate, segment length, rotation direction, and incremental rotation angle, spirals are tailored to predetermined handedness, pitch, and height. The curved morphology of the segments is a result of a lateral compositional gradient across the segments while maintaining a preferred crystallographic growth direction, implying a lateral gradient in optical properties as well. Left- and right-handed nanospirals, tailored with 5 periods of 200 nm pitch, as confirmed by scanning electron microscopy, exhibit uniform spiral diameters of ~80 nm (local segment diameters of ~60 nm) with tapered hexagonal tips. High resolution electron microscopy, in combination with nanoprobe energy dispersive X-ray spectroscopy and valence electron energy loss spectroscopy, show that individual nanospirals consist of an In-rich core with ~15 nm-diameter hexagonal cross-section, comprised of curved basal planes. The core is surrounded by an Al-rich shell with a thickness asymmetry spiraling along the core. The ensemble nanospirals, across the 1 cm2 wafers, show high in-plane ordering with respect to shape, crystalline orientation, and direction of compositional gradient. Mueller matrix spectroscopic ellipsometry shows that the tailored chirality is manifested in the polarization state of light reflected off the CLEG nanospiral-coated wafers. In that, the polarization state is shown to be dependent on the handedness of the nanospirals and the wavelength of the incident light in the ultraviolet-visible region.
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