| 1. |
- Anzi, L., et al.
(författare)
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Ultra-low contact resistance in graphene devices at the Dirac point
- 2018
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Ingår i: 2D Materials. - : IOP Publishing. - 2053-1583. ; 5:2
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Tidskriftsartikel (refereegranskat)abstract
- Contact resistance is one of the main factors limiting performance of short-channel graphene field-effect transistors (GFETs), preventing their use in low-voltage applications. Here we investigated the contact resistance between graphene grown by chemical vapor deposition (CVD) and different metals, and found that etching holes in graphene below the contacts consistently reduced the contact resistance, down to 23 m with Au contacts. This low contact resistance was obtained at the Dirac point of graphene, in contrast to previous studies where the lowest contact resistance was obtained at the highest carrier density in graphene (here 200 m was obtained under such conditions). The 'holey' Au contacts were implemented in GFETs which exhibited an average transconductance of 940 S m−1 at a drain bias of only 0.8 V and gate length of 500 nm, which out-perform GFETs with conventional Au contacts.
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| 2. |
- Guerriero, E., et al.
(författare)
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High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide
- 2017
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Ingår i: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322 .- 2045-2322. ; 7:1
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Tidskriftsartikel (refereegranskat)abstract
- The high-frequency performance of transistors is usually assessed by speed and gain figures of merit, such as the maximum oscillation frequency f(max), cutoff frequency f(T), ratio f(max)/f(T), forward transmission coefficient S-21, and open-circuit voltage gain A(v). All these figures of merit must be as large as possible for transistors to be useful in practical electronics applications. Here we demonstrate high-performance graphene field-effect transistors (GFETs) with a thin AlOx gate dielectric which outperform previous state-of-the-art GFETs: we obtained f(max)/f(T) > 3, A(v) > 30 dB, and S-21 = 12.5 dB (at 10 MHz and depending on the transistor geometry) from S-parameter measurements. A dc characterization of GFETs in ambient conditions reveals good current saturation and relatively large transconductance similar to 600 S/m. The realized GFETs offer the prospect of using graphene in a much wider range of electronic applications which require substantial gain.
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| 3. |
- Vera-Sirera, Francisco, et al.
(författare)
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A bHLH-Based Feedback Loop Restricts Vascular Cell Proliferation in Plants
- 2015
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Ingår i: Developmental Cell. - : Elsevier BV. - 1534-5807 .- 1878-1551. ; 35:4, s. 432-443
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Tidskriftsartikel (refereegranskat)abstract
- Control of tissue dimensions in multicellular organisms requires the precise quantitative regulation of mitotic activity. In plants, where cells are immobile, tissue size is achieved through control of both cell division orientation and mitotic rate. The bHLH transcription factor heterodimer formed by TARGET OF MONOPTEROS5 (TMO5) and LONESOME HIGHWAY (LHVV) is a central regulator of vascular width-increasing divisions. An important unanswered question is how its activity is limited to specify vascular tissue dimensions. Here we identify a regulatory network that restricts TMO5/LHW activity. We show that thermospermine synthase ACAULIS5 antagonizes TMO5/LHW activity by promoting the accumulation of SAC51-LIKE (SACL) bHLH transcription factors. SACL proteins heterodimerize with LHW therefore likely competing with TMO5/LHW interactions prevent activation of TMO5/LHW target genes, and suppress the over-proliferation caused by excess TMO5/LHW activity. These findings connect two thus-far disparate pathways and provide a mechanistic understanding of the quantitative control of vascular tissue growth.
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