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1.
  • Bistarelli, Silvia, et al. (författare)
  • Evaluating CNT-Based Interconnects : A Nummerical Tool to Characterize Hybrid CNT-Copper Interconnects
  • 2017
  • Ingår i: IEEE Microwave Magazine. - 1527-3342 .- 1557-9581. ; 18:4, s. 124-129
  • Tidskriftsartikel (refereegranskat)abstract
    • Nanotechnologies offer a vast number of applications due to the unique features of nanostructured materials [1]. In the electronics field, this new technology could open innovative ways to go beyond Moore's law [2], but progress in manufacturing technology still limits the wide dispersion of nanotechnology-based circuits. The bridge between nanoscience and realized devices can be achieved by modeling the multiphysics phenomena at the nanoscale, which will aid in the development of the technology.
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2.
  • Sun, Shuangxi, 1986, et al. (författare)
  • Vertically aligned CNT-Cu nano-composite material for stacked through-silicon-via interconnects
  • 2016
  • Ingår i: Nanotechnology. - : IOP Publishing. - 1361-6528 .- 0957-4484. ; 27:33, s. Art no335705-
  • Tidskriftsartikel (refereegranskat)abstract
    • For future miniaturization of electronic systems using 3D chip stacking, new fine-pitch materials for through-silicon-via (TSV) applications are likely required. In this paper, we propose a novel carbon nanotube (CNT)/copper nanocomposite material consisting of high aspect ratio, vertically aligned CNT bundles coated with copper. These bundles, consisting of hundreds of tiny CNTs, were uniformly coated by copper through electroplating, and aspect ratios as high as 300: 1 were obtained. The resistivity of this nanomaterial was found to be as low as similar to 10(-8) Omega m, which is of the same order of magnitude as the resistivity of copper, and its temperature coefficient was found to be only half of that of pure copper. The main advantage of the composite TSV nanomaterial is that its coefficient of thermal expansion (CTE) is similar to that of silicon, a key reliability factor. A finite element model was set up to demonstrate the reliability of this composite material and thermal cycle simulations predicted very promising results. In conclusion, this composite nanomaterial appears to be a very promising material for future 3D TSV applications offering both a low resistivity and a low CTE similar to that of silicon.
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