| 1. |
- Gutt, Tomasz, et al.
(författare)
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PECVD and thermal gate oxides on 3C vs. 4H SiC-Impact on leakage, traps and energy offsets
- 2014
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Ingår i: ECS Transactions. - : The Electrochemical Society. - 1938-5862 .- 1938-6737. ; , s. 237-243
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Konferensbidrag (refereegranskat)abstract
- Energy-band model offsets, trap density distributions and gate leakage characteristics of MOS capacitors with PECVD and thermal gate oxides on 3C- and 4H-SiC were compared. The difference in trap energy distributions between the polytypes demonstrated in this experiment confirms that the 3C-SiC polytype is less vulnerable to near-interface traps (NIT) which are found in high density in the 4H-SiC. It was also shown that the examined 3C-SiC substrates demonstrated higher leakage currents due to higher dislocation concentration compared with 4H-SiC. Finally, the energy band model of the SiC MOS devices was described quantitatively which could be considered in further development of the devices and processes.
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| 2. |
- Kaczmarski, J., et al.
(författare)
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Transparent Ru–Si–O/In–Ga–Zn–O MESFETs on flexible polymer substrates
- 2018
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Ingår i: IEEE Transactions on Electron Devices. - 1557-9646 .- 0018-9383. ; 65:1, s. 129-135
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Tidskriftsartikel (refereegranskat)abstract
- With the development of novel device applications, e.g., in the field of Internet of Things or point-of-care personalized diagnostic systems, came an increased demand for MESFETs for fast and low-power consumption integrated circuits and active-matrix displays. In this paper, we present fabrication and characterization of transparent Ru–Si–O/In–Ga–Zn–O MESFETs on flexible substrates. The use of transparent conducting oxide, namely, Ru–Si–O, as Schottky gate electrode, allows for processing the devices at room temperature, enabling the utilization of such low-temperature substrates as polyethylene terephthalate foil and paper. It was shown that tuning the device geometry allows realization of transistors providing on-current up to 2 mA, while the highest on-to-off current ratio equals 2 × 105, with off-current below 1 nA, carrier mobility in the channel exceeds 9 cm2·V−1·s−1, and subthreshold swing is below 250 mV·decade−1
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| 3. |
- Piskorski, Krzysztof, et al.
(författare)
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Distributions of electric parameters in MOS structures on 3C-SiC substrate
- 2013
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Ingår i: Central European Journal of Physics. - : Walter de Gruyter GmbH. - 1895-1082 .- 1644-3608. ; 11:2, s. 231-238
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Tidskriftsartikel (refereegranskat)abstract
- In this work studies of some electrical parameters of the MOS structure based on 3C-SiC substrate are presented. The effective contact potential difference φMS, the barrier height at the gate-dielectric interface EBG and the flat-band in semiconductor voltage VFB were measured using several electric and photoelectric techniques. Values of these parameters obtained on structures with different gate areas decrease monotonically with increasing parameter R, defined as the ratio of the gate perimeter to the gate area. Such behavior confirmed results obtained on MOS structures on silicon substrate and also supported our hypothesis that the mechanical stress in the dielectric layer under the metal gate causes non uniform distribution of some parameters over the gate area of MOS structure.
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| 4. |
- Przewlocki, Henryk M., et al.
(författare)
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Band diagrams and trap distributions in metal-SiO2-SiC(3C) structures with different metal gates
- 2012
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Ingår i: ECS Transactions. - : The Electrochemical Society. - 1938-5862 .- 1938-6737. - 9781607683513 ; , s. 231-242
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Konferensbidrag (refereegranskat)abstract
- Cubic silicon carbide (3C-SiC) is a particularly promising material for high and medium power MOS transistors, because it offers higher inversion channel mobility than other SiC polytypes. Optimizing the field effect devices made of 3C-SiC and choosing the appropriate materials to be incorporated in the device requires knowledge of the investigated structure band diagram. Hence, the first part of this work is devoted to determination of band diagrams of various MOS structures on 3C-SiC substrates. Since trap densities and distributions are still important for field effect devices on 3C-SiC substrates, the second part of this work is devoted to this problem.
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| 5. |
- Przewlocki, Henryk M., et al.
(författare)
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Properties of Al-SiO2-SiC(3C) structures with thermally grown and PECVD deposited SiO2 layers
- 2013
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Ingår i: ECS Transactions. - : Electrochemical Society Inc.. - 1938-5862 .- 1938-6737. ; , s. 61-70
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Konferensbidrag (refereegranskat)abstract
- The 3C-SiC silicon carbide is a promising substrate material for MOS transistors. Parameters of MOS transistors are strongly dependent on the processing of the semiconductor-dielectric system. We study and compare the crucial features of the SiC(3C)-SiO2 systems with thermally grown and PECVD deposited SiO2 layers. For both types of systems, using the Al-SiO2-SiC(3C) capacitors as test structures, we determine and compare the following properties: The leakage currents and breakdown voltages of SiO2 layers, densities and distributions in energy of interface traps, band diagrams of the SiC(3C)-SiO2 systems, as well as structural properties and mechanical stresses in both types of SiO2 layers. Characterization of the above mentioned features is done using electrical, photoelectric and optical methods, including micro-Raman spectroscopy. The characterization results lead us to the conclusion, that PECVD deposition of SiO2 followed by wet oxygen annealing is more advantageous for MOSFET fabrication than the thermal growth of the SiO 2 layer.
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