| 1. |
|
|
| 2. |
- Plaine, Glenn-Yves, et al.
(författare)
-
Low-temperature growth of GaInNAs/GaAs quantum wells for 1.3-ÎŒm lasers using metal-organic vapor-phase epitaxy
- 2001
-
Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - Nara. - 0780367006 ; , s. 563-566
-
Konferensbidrag (refereegranskat)abstract
- GaInNAs/GaAs quantum-well (QW) lasers emitting at 1.3 ÎŒm were grown using metal-organic vapor-phase epitaxy (MOVPE) in the limit of very low growth rate and temperature. The material was characterized by photoluminescence (PL) spectroscopy as well as by implementation in broad-area (BA) edge-emitting lasers. While the PL intensity was found to decrease by more than two orders of magnitude between 1175 and 1350 nm, the corresponding BA laser threshold current showed a much more modest increase. For a 1.28-ÎŒm laser the transparency current was 0.8 kA/cm2, the slope efficiency 0.24 W/A per facet and T0=100 K. Comparison between PL emission properties and BA laser performance reveled a complex relationship. A high PL intensity does not necessarily lead to low threshold-current lasers. In these cases, the FWHM seems to be the more relevant parameter for QW optimization.
|
|
| 3. |
- Salomonsson, Fredrik, et al.
(författare)
-
Low-threshold, high-temperature operation of 1.2 mu m InGaAs vertical cavity lasers
- 2001
-
Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 37:15, s. 957-958
-
Tidskriftsartikel (refereegranskat)abstract
- The growth and characterisation of high performance InGaAs/GaAs quantum-well vertical cavity lasers with an emission wavelength of 1215 nm is reported. Continuous wave operation is demonstrated up to 105°C with a threshold current below 1 mA for T < 80°C. For a 2.5 μm device the room temperature threshold current, output power and slope efficiency is 0.6 mA, 0.6 mW and 0.2 W/A, respectively.
|
|
