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Träfflista för sökning "WFRF:(Planson Dominique) "

Sökning: WFRF:(Planson Dominique)

  • Resultat 1-3 av 3
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1.
  • Dheilly, Nicolas, et al. (författare)
  • Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique
  • 2009
  • Ingår i: Silicon Carbide and Related Materials 2008. - : Trans Tech Publications Ltd. ; , s. 703-706
  • Konferensbidrag (refereegranskat)abstract
    • This paper reports on the influence of temperature on the electrical carrier lifetime of a 3.3 kV 4H-SiC PiN diode processed with a new generation of SiC material. The Open Circuit Voltage Decay (OCVD) is used to evaluate ambipolar lifetime evolution versus temperature. The paper presents a description of the setup, electrical measurements and extraction fittings. The ambipolar lifetime is found to rise from 600 ns at 30 °C to 3.5 μs at 150 °C.
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2.
  • Civrac, Gabriel, et al. (författare)
  • 600 V PiN diodes fabricated using on-axis 4H silicon carbide
  • 2012
  • Ingår i: Materials Science Forum Vol 717 - 720. - : Trans Tech Publications Inc.. ; , s. 969-972
  • Konferensbidrag (refereegranskat)abstract
    • This paper reports the fabrication and electrical characterization of PiN diodes on an on-axis grown epitaxial layer. TCAD simulations have been performed in order to design their architecture. Some of these diodes have a breakdown voltage around 600 V. A comparison is made with similar diodes fabricated on off-cut grown layers. Computer simulations are used to explain lower breakdown voltages than those expected.
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3.
  • Thierry-Jebali, Nicolas, et al. (författare)
  • Electrical Characterization of PiN Diodes with p(+) layer Selectively Grown by VLS Transport
  • 2013
  • Ingår i: Silicon Carbide and Related Materials 2012. - : Trans Tech Publications Inc.. ; , s. 911-914
  • Konferensbidrag (refereegranskat)abstract
    • This paper deals with electrical characterization of PiN diodes fabricated on an 8 degrees off-axis 4H-SiC with a p(++) epitaxial area grown by Vapour-Liquid-Solid (VLS) transport. It provides for the first time evidence that a high quality p-n junction can be achieved by using this technique followed by a High Temperature Annealing (HTA) process.
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  • Resultat 1-3 av 3

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