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Sökning: WFRF:(Plissard Sebastien R.)

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1.
  • Bommer, Jouri D. S., et al. (författare)
  • Spin-Orbit Protection of Induced Superconductivity in Majorana Nanowires
  • 2019
  • Ingår i: Physical Review Letters. - : AMER PHYSICAL SOC. - 0031-9007 .- 1079-7114. ; 122:18
  • Tidskriftsartikel (refereegranskat)abstract
    • Spin-orbit interaction (SOI) plays a key role in creating Majorana zero modes in semiconductor nanowires proximity coupled to a superconductor. We track the evolution of the induced superconducting gap in InSb nanowires coupled to a NbTiN superconductor in a large range of magnetic field strengths and orientations. Based on realistic simulations of our devices, we reveal SOI with a strength of 0.15-0.35 eV angstrom. Our approach identifies the direction of the spin-orbit field, which is strongly affected by the superconductor geometry and electrostatic gates.
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2.
  • Cavalli, Alessandro, et al. (författare)
  • High-Yield Growth and Characterization of < 100 > InP p-n Diode Nanowires
  • 2016
  • Ingår i: Nano letters (Print). - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 16:5, s. 3071-3077
  • Tidskriftsartikel (refereegranskat)abstract
    • Semiconductor nanowires are nanoscale structures holding promise in many fields such as optoelectronics, quantum computing, and thermoelectrics. Nanowires are usually grown vertically on (111)-oriented substrates, while (100) is the standard in semiconductor technology. The ability to grow and to control impurity doping of (100) nanowires is crucial for integration. Here, we discuss doping of single-crystalline < 100 > nanowires, and the structural and optoelectronic properties of p-n junctions based on < 100 > InP nanowires. We describe a novel approach to achieve low resistance electrical contacts to nanowires via a gradual interface based on p-doped InAsP. As a first demonstration in optoelectronic devices, we realize a single nanowire light emitting diode in a < 100 >-oriented InP nanowire p-n junction. To obtain high vertical yield, which is necessary for future applications, we investigate the effect of the introduction of dopants on the nanowire growth.
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