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- Prezzi, D., et al.
(författare)
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Hydrogen-related photoluminescent centers in SiC
- 2004
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 70:20, s. 205207-1
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Tidskriftsartikel (refereegranskat)abstract
- Local density functional calculations are used to investigate models of the center responsible for a prominent set of luminescent lines with zero-phonon lines around 3.15 eV in hydrogen rich 4H-SiC and previously attributed to VSi-H . We find that the electronic structure of this defect and the character of its vibrational modes are inconsistent with this assignment. In contrast, a H2* center, bound to a carbon anti-site, is more stable than the isolated molecule and possesses a donor level close to that observed for the H-lines. Moreover, its vibrational modes are in good agreement with experiment. A possible mechanism for the radiation enhanced quenching of the defect is discussed.
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