| 1. |
- Joffrin, E., et al.
(författare)
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Overview of the JET preparation for deuterium-tritium operation with the ITER like-wall
- 2019
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Ingår i: Nuclear Fusion. - : IOP Publishing. - 1741-4326 .- 0029-5515. ; 59:11
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Forskningsöversikt (refereegranskat)abstract
- For the past several years, the JET scientific programme (Pamela et al 2007 Fusion Eng. Des. 82 590) has been engaged in a multi-campaign effort, including experiments in D, H and T, leading up to 2020 and the first experiments with 50%/50% D-T mixtures since 1997 and the first ever D-T plasmas with the ITER mix of plasma-facing component materials. For this purpose, a concerted physics and technology programme was launched with a view to prepare the D-T campaign (DTE2). This paper addresses the key elements developed by the JET programme directly contributing to the D-T preparation. This intense preparation includes the review of the physics basis for the D-T operational scenarios, including the fusion power predictions through first principle and integrated modelling, and the impact of isotopes in the operation and physics of D-T plasmas (thermal and particle transport, high confinement mode (H-mode) access, Be and W erosion, fuel recovery, etc). This effort also requires improving several aspects of plasma operation for DTE2, such as real time control schemes, heat load control, disruption avoidance and a mitigation system (including the installation of a new shattered pellet injector), novel ion cyclotron resonance heating schemes (such as the three-ions scheme), new diagnostics (neutron camera and spectrometer, active Alfven eigenmode antennas, neutral gauges, radiation hard imaging systems...) and the calibration of the JET neutron diagnostics at 14 MeV for accurate fusion power measurement. The active preparation of JET for the 2020 D-T campaign provides an incomparable source of information and a basis for the future D-T operation of ITER, and it is also foreseen that a large number of key physics issues will be addressed in support of burning plasmas.
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| 2. |
- Du, Hao, et al.
(författare)
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Corundum-structured AlCrNbTi oxide film grown using high-energy early-arriving ion irradiation in high-power impulse magnetron sputtering
- 2023
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Ingår i: Scripta Materialia. - : Elsevier. - 1359-6462 .- 1872-8456. ; 234
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Tidskriftsartikel (refereegranskat)abstract
- Multicomponent or high-entropy oxide films are of interest due to their remarkable structure and properties. Here, energetic ion irradiation is utilized for controlling the phase formation and structure of AlCrNbTi oxide at growth temperature of 500 degrees C. The ion acceleration is achieved by using a high-power impulse magnetron sputtering (HiPIMS) discharge, accompanied by a 10 & mu;s-long synchronized substrate bias (Usync), to minimize the surface charging effect and accelerate early-arriving ions, mainly Al+, O+, Ar2+, and Al2+. By increasing the magnitude of Usync from-100 V to-500 V, the film structure changes from amorphous to single-phase corundum, followed by the formation of high-number-density stacking faults (or nanotwins) at Usync =-500 V. This approach paves the way to tailor the high-temperature-phase and defect formation of oxide films at low growth temperature, with prospects for use in protective-coating and dielectric applications.
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| 3. |
- Niiranen, Pentti, et al.
(författare)
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Biased quartz crystal microbalance method for studies of chemical vapor deposition surface chemistry induced by plasma electrons
- 2023
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Ingår i: Review of Scientific Instruments. - : AIP Publishing. - 0034-6748 .- 1089-7623. ; 94:2
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Tidskriftsartikel (refereegranskat)abstract
- A recently presented chemical vapor deposition (CVD) method involves using plasma electrons as reducing agents for deposition of metals. The plasma electrons are attracted to the substrate surface by a positive substrate bias. Here, we present how a standard quartz crystal microbalance (QCM) system can be modified to allow applying a DC bias to the QCM sensor to attract plasma electrons to it and thereby also enable in situ growth monitoring during the electron-assisted CVD method. We show initial results from mass gain evolution over time during deposition of iron films using the biased QCM and how the biased QCM can be used for process development and provide insight into the surface chemistry by time-resolving the CVD method. Post-deposition analyses of the QCM crystals by cross-section electron microscopy and high-resolution x-ray photoelectron spectroscopy show that the QCM crystals are coated by an iron-containing film and thus function as substrates in the CVD process. A comparison of the areal mass density given by the QCM crystal and the areal mass density from elastic recoil detection analysis and Rutherford backscattering spectrometry was done to verify the function of the QCM setup. Time-resolved CVD experiments show that this biased QCM method holds great promise as one of the tools for understanding the surface chemistry of the newly developed CVD method.
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| 4. |
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| 5. |
- Shu, Rui, 1990-, et al.
(författare)
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Influence of Metal Substitution and Ion Energy on Microstructure Evolution of High-Entropy Nitride (TiZrTaMe)N1-x (Me = Hf, Nb, Mo, or Cr) Films
- 2021
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Ingår i: ACS APPLIED ELECTRONIC MATERIALS. - : American Chemical Society (ACS). - 2637-6113. ; 3:6, s. 2748-2756
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Tidskriftsartikel (refereegranskat)abstract
- Multicomponent or high-entropy ceramics show unique combinations of mechanical, electrical, and chemical properties of importance in coating applications. However, generalizing controllable thin-film processes for these complex materials remains a challenge. Here, understoichiometric (TiZrTaMe)N1-x (Me = Hf, Nb, Mo, or Cr, 0.12 <= x <= 0.30) films were deposited on Si(100) substrates at 400 degrees C by reactive magnetron sputtering using single elemental targets. The influence of ion energy during film growth was investigated by varying the negative substrate bias voltage from similar to 10 V (floating potential) to 130 V. The nitrogen content for the samples determined by elastic recoil detection analysis varied from 34.9 to 43.8 at. % (0.12 <= x <= 0.30), and the metal components were near-equimolar and not affected by the bias voltage. On increasing the substrate bias, the phase structures of (TiZrTaMe)N1-x (Me = Hf, Nb, or Mo) films evolved from a polycrystalline fcc phase to a (002) preferred orientation along with a change in surface morphology from faceted triangular features to a dense and smooth structure with nodular mounds. All the four series of (TiZrTaMe)N1-x (Me = Hf, Nb, Mo, or Cr) films exhibited increasing intrinsic stress with increasing negative bias. The maximum compressive stress reached similar to 3.1 GPa in Hf- and Cr-containing films deposited at -130 V. The hardness reached a maximum value of 28.0 +/- 1.0 GPa at a negative bias >= 100 V for all the four series of films. The effect of bias on the mechanical properties of (TiNbZrMe)N1-x films can thus guide the design of protective high-entropy nitride films.
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| 6. |
- Shu, Rui, et al.
(författare)
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Multicomponent TixNbCrAl nitride films deposited by dc and high-power impulse magnetron sputtering
- 2021
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Ingår i: Surface & Coatings Technology. - : Elsevier. - 0257-8972 .- 1879-3347. ; 426
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Tidskriftsartikel (refereegranskat)abstract
- Multicomponent TixNbCrAl nitride films were deposited on Si(100) substrates by reactive direct current magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) in the absence of substrate heating and bias. Three single Ti, Nb, and Cr50Al50 targets were either driven by three de or three HiPIMS power supplies. The Ti content in the films was varied by tuning the power applied to the Ti target. The composition was determined by ion beam analysis. The nitrogen content is nearly stoichiometric (48-50 at.%) in the HiPIMS series, while the dcMS are understoichiometric (39-45 at.%). The crystal structure, stress and density of the studied film were investigated by X-ray techniques and the microstructure was examined by scanning electron microscopy. All the Ti-containing films for both series exhibit an fcc NaCl-type phase structure. In particular, the dcMS series shows a (111) preferred orientation, resulting in a faceted surface morphology compared to a dense and smooth microstructure of the HiPIMS films. The compressive stress of the HiPIMS series (> 2.0 GPa) is significantly larger than the values of the dcMS series (<0.5 GPa). Nanoindentation measurements show a maximum hardness of 29.9 GPa and Young's modulus of 304 GPa were obtained in the HiPIMS series. The results may promote HiPIMS techniques for the synthesis of complex multicomponent films for the application aspect to protective and hard coatings.
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| 7. |
- Abedin, Ahmad, et al.
(författare)
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GeSnSi CVD Epitaxy using Silane, Germane, Digermane, and Tin tetrachloride
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Tidskriftsartikel (refereegranskat)abstract
- In this study, strain relaxed and compressive strained Ge1-x-ySnxSiy (0.015≤x≤0.15 and 0≤y≤0.15) layers were epitaxially grown on Si substrate in a chemical vapor deposition reactor at atmospheric pressure. Digermane (Ge2H6) and germane (GeH4) were used as Ge precursors and tin tetrachloride (SnCl4) was used as Sn precursor. The growth temperature was kept below 400ᵒC to suppress Sn out diffusion. The layers crystal quality and strain were characterized using XRD, high resolution reciprocal lattice mapping and transmission electron microscopy and the surface morphology was investigated by atomic force microscopy (AFM). Furthermore, the low temperature epitaxial growth up to 15% Si atoms incorporation in Ge0.94Sn0.06 was demonstrated by adding silane (SiH4) as Si precursor. Sn contents calculated from high resolution XRD patterns were confirmed by Rutherford backscattering spectroscopy which shows that Sn atoms are mostly positioned in substitutional sites. AFM analysis showed below 1nm surface roughness for both strained and strain relaxed GeSn layers which make the promising materials for photonics and electronics applications.
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| 8. |
- Achenbach, Jan-Ole, et al.
(författare)
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Correlative Experimental and Theoretical Investigation of the Angle-Resolved Composition Evolution of Thin Films Sputtered from a Compound Mo2BC Targe
- 2019
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Ingår i: Coatings. - : MDPI AG. - 2079-6412. ; 9:3
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Tidskriftsartikel (refereegranskat)abstract
- The angle-resolved composition evolution of Mo-B-C thin films deposited from a Mo2BC compound target was investigated experimentally and theoretically. Depositions were carried out by direct current magnetron sputtering (DCMS) in a pressure range from 0.09 to 0.98 Pa in Ar and Kr. The substrates were placed at specific angles α with respect to the target normal from 0 to ±67.5°. A model based on TRIDYN and SIMTRA was used to calculate the influence of the sputtering gas on the angular distribution function of the sputtered species at the target, their transport through the gas phase, and film composition. Experimental pressure- and sputtering gas-dependent thin film chemical composition data are in good agreement with simulated angle-resolved film composition data. In Ar, the pressure-induced film composition variations at a particular α are within the error of the EDX measurements. On the contrary, an order of magnitude increase in Kr pressure results in an increase of the Mo concentration measured at α = 0° from 36 at.% to 43 at.%. It is shown that the mass ratio between sputtering gas and sputtered species defines the scattering angle within the collision cascades in the target, as well as for the collisions in the gas phase, which in turn defines the angle- and pressure-dependent film compositions.
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| 9. |
- Achenbach, Jan-Ole, et al.
(författare)
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Low temperature oxidation behavior of Mo2BC coatings
- 2020
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : A V S AMER INST PHYSICS. - 0734-2101 .- 1520-8559. ; 38:2
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Tidskriftsartikel (refereegranskat)abstract
- Mo2BC exhibits a unique combination of high stiffness and moderate ductility, enabling the application as a protective and wear resistant coating. As the low temperature oxidation behavior of Mo2BC coatings is unexplored, direct current magnetron sputtered Mo2BC coatings were oxidized at temperatures ranging from 500 to 100 degrees C for up to 28 days. Time-of-flight elastic recoil detection analysis reveals that the onset of oxidation takes place at approximately 300 degrees C as a significant increase in the O content was observed. Crystalline oxide scales containing orthorhombic MoO3 were identified after oxidation for 15 min at 500 degrees C and 10 days at 200 degrees C. Isothermal oxidation at 200 and 100 degrees C exhibits oxide scale thicknesses of 401 +/- 33 and 22 +/- 10 nm after 14 days. Oxidation for 28 days at 100 degrees C exhibits an oxide scale thickness of 13 +/- 3 nm, which is comparable to the aforementioned oxide scale thickness after oxidation for 14 days at 100 degrees C. Based on the combination of mechanical properties and the here reported low temperature oxidation behavior, Mo2BC coatings qualify for applications in solid wood machining and low temperature forming processes at temperatures close to 100 degrees C or below.
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| 10. |
- Achenbach, Jan-Ole, et al.
(författare)
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Synthesis and Properties of Orthorhombic MoAlB Coatings
- 2019
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Ingår i: Coatings. - : MDPI. - 2079-6412. ; 9:8
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Tidskriftsartikel (refereegranskat)abstract
- MoAlB is a potential candidate for high-temperature application since a dense, adherent alumina scale is formed. While, based on X-ray diffraction investigations, the formation of phase pure orthorhombic MoAlB coatings is observed, energy dispersive X-ray spectroscopy carried out in a scanning transmission electron microscope reveals the presence of Al-rich and O-rich regions within the MoAlB matrix. The oxidation kinetics of coatings and bulk is similar to the scale thickness formed on the MoAlB coating after oxidation at 1200 degrees C for 30 min is similar to the one extrapolated for bulk MoAlB. Furthermore, the oxidation kinetics of MoAlB coatings is significantly lower than the one reported for bulk Ti2AlC. Finally, the elastic properties measured for the as-deposited coatings are consistent ab initio predictions.
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