| 1. |
- Laukkanen, P, et al.
(författare)
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Local variation in Bi crystal sites of epitaxial GaAsBi studied by photoelectron spectroscopy and first-principles calculations
- 2017
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Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332. ; 396, s. 688-694
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial Bi-containing III–V crystals (III-V1-xBix) have attracted increasing interest due to their potential in infrared applications. Atomic-scale characterization and engineering of bulk-like III-V1-xBix properties (e.g., Bi incorporation and defect formation) are challenging but relevant to develop applications. Toward that target, we report here that the traditional surface-science measurement of photoelectron spectroscopy (PES) is a potential, non-destructive method to be combined in the studies of bulk-like properties, when surface effects are properly removed. We have investigated epitaxial GaAs1-xBix films, capped by epitaxial AlAs layers, with high-resolution photoelectron spectroscopy. The Bi5d core-level spectra of GaAs1-xBix together with ab-initio calculations give direct evidence of variation of Bi bonding environment in the lattice sites. The result agrees with photoluminescence (PL) measurement which shows that the studied GaAs1-xBix films include local areas with higher Bi content, which contribute to PL but do not readily appear in x-ray diffraction (XRD). The measured and calculated Bi core-level shifts show also that Ga vacancies and Bi clusters are dominant defects.
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| 2. |
- Andersson, Mike, et al.
(författare)
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Field Effect Based Gas Sensors, from Basic Mechanisms to the Latest Commercial Device Designs
- 2016
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Ingår i: SENSORS AND ELECTRONIC INSTRUMENTATION ADVANCES (SEIA). - : INT FREQUENCY SENSOR ASSOC-IFSA. - 9788460899631 ; , s. 19-21
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Konferensbidrag (refereegranskat)abstract
- This contribution treats the latest developments in the understanding of basic principles regarding device design, transduction mechanisms, gas-materials-interactions, and materials processing for the tailored design and fabrication of SiC FET gas sensor devices, mainly intended as products for the automotive sector.
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| 3. |
- Huotari, J., et al.
(författare)
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Separation of valence states in thin films with mixed V2O5 and V7O16 phases
- 2016
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Ingår i: Journal of Electron Spectroscopy and Related Phenomena. - : Elsevier BV. - 0368-2048 .- 1873-2526. ; 211, s. 47-54
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Tidskriftsartikel (refereegranskat)abstract
- Among the other applications, vanadium oxide thin films are considered to be excellent candidates for gas sensing. To understand the origins of the sensing capability, we carried out X-ray photoelectron and X-ray absorption spectroscopy measurements to determinate the surface valence states of thin films with mixed V7O16 and V2O5 compounds. Thin films were fabricated by pulsed laser deposition, and the crystal structure and symmetry of the deposited films was studied using grazing incidence X-ray diffraction and Raman spectroscopy. These results together with X-ray photoelectron and absorption spectra showed that the thin-film crystal structures varied between orthorhombic V2O5 phase and another phase of triclinic V7O16. X-ray photoelectron spectroscopy was used to quantitatively confirm the high amount of V4+ ions on surfaces of the films, especially of films with V7O16 phase present. This result was confirmed in the quantitative analysis of the V2p near-edge X-ray absorption spectra. Through the observed electronic structures, it was found that in addition to unique crystal structure and morphology, the enhanced gas sensitivity of these layers is attributed to the increase in the amount of surface oxygen vacancies.
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| 4. |
- Huotari, J., et al.
(författare)
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Synthesis of nanostructured solid-state phases of V7O16 and V2O5 compounds for ppb-level detection of ammonia
- 2016
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Ingår i: Journal of Alloys and Compounds. - : ELSEVIER SCIENCE SA. - 0925-8388 .- 1873-4669. ; 675, s. 433-440
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Tidskriftsartikel (refereegranskat)abstract
- Solid state phase of V7O16 with separate V2O5 phase were fabricated by pulsed laser deposition. The crystal structure and symmetry of the deposited films were studied with X-ray diffraction and Raman spectroscopy, respectively. Rietveld analysis was performed to the X-ray diffraction measurement results. The surface potentials and morphologies of the films were studied with atomic force microscopy, and microstructure of the thin films was analysed by transmission electron microscopy. Raman spectroscopy and Rietveld refinement results confirmed that the thin-film crystal structures varied between orthorombic V2O5 phase and another phase, triclinic V2016, previously found only in the walls of vanadium oxide nanotubes (VOx, -NT), bound together with organic amine. We have earlier presented the first results of stable and pure metal -oxide solid-state phase of V2016 manufactured from ceramic V205 target. Here we show more detailed study of these structures. The microstructure studies showed a variation on the porosity of the films according to crystal structures and also some fibre -like nanostructures were found in the films. The surface morphology depended strongly on the crystal structure and the surface potential studies showed 50 meV difference in the work function values between the phases. Compounds were found to be extremely sensitive towards ammonia, NH3, down to 40 ppb concentrations, and have shown to have the stability and selectivity to control the Selective Catalytic Reduction process, where nitrogen oxides are reduced by ammonia in, e.g. diesel exhausts.
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| 5. |
- Laukkanen, P., et al.
(författare)
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Formation and destabilization of Ga interstitials in GaAsN : Experiment and theory
- 2012
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 86:19, s. 195205-
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Tidskriftsartikel (refereegranskat)abstract
- Using first-principles total energy calculations we have found complex defects induced by N incorporation in GaAsN. The formation energy of the Ga interstitial atom is very significantly decreased due to local effects within the defect complex. The stability of the Ga interstitials is further increased at surfaces. The present results suggest that the energetically favorable Ga interstitial atoms are much more abundant in GaAsN than the previously considered N defects, which have relatively large formation energies. Our synchrotron radiation core-level photoemission measurements support the computational results. The formation of harmful Ga interstitials should be reduced by incorporating large group IV B atoms in GaAsN.
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| 6. |
- Pihlajamaa, T, et al.
(författare)
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Characterization of recombinant amino-terminal NC4 domain of human collagen IX - Interaction with glycosaminoglycans and cartilage oligomeric matrix protein
- 2004
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Ingår i: Journal of Biological Chemistry. - 1083-351X. ; 279:23, s. 24265-24273
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Tidskriftsartikel (refereegranskat)abstract
- The N-terminal NC4 domain of collagen IX is a globular structure projecting away from the surface of the cartilage collagen fibril. Several interactions have been suggested for this domain, reflecting its location and its characteristic high isoelectric point. In an attempt to characterize the NC4 domain in more detail, we set up a prokaryotic expression system to produce the domain. The purified 27.5-kDa product was analyzed for its glycosaminoglycan-binding potential by surface plasmon resonance and solid-state assays. The results show that the NC4 domain of collagen IX specifically binds heparin with a K-d of 0.6 muM, and the full-length recombinant collagen IX has an even stronger interaction with heparin, with an apparent K-d of 3.6 nM. The heparin-binding site of the NC4 domain was located in the extreme N terminus, containing a heparin-binding consensus sequence, whereas electron microscopy suggested the presence of at least three additional heparin-binding sites on full-length collagen IX. The NC4 domain was also shown to bind cartilage oligomeric matrix protein. This interaction and the association of cartilage oligomeric matrix protein with other regions of collagen IX were found to be heparin-competitive. Circular dichroism analyses of the NC4 domain indicated the presence of stabilizing disulfide bonds and a thermal denaturation point of about 80degreesC. The pattern of disulfide bond formation within the NC4 domain was identified by tryptic peptide mass mapping of the NC4 in native and reduced states. A similar pattern was demonstrated for the NC4 domain of full-length recombinant collagen IX.
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| 7. |
- Kaipainen, Aku L, et al.
(författare)
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Cerebrospinal fluid dynamics in idiopathic intracranial hypertension : a literature review and validation of contemporary findings
- 2021
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Ingår i: Acta Neurochirurgica. - : Springer. - 0001-6268 .- 0942-0940. ; 163:12, s. 3353-3368
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Tidskriftsartikel (refereegranskat)abstract
- Background: Idiopathic intracranial hypertension (IIH) is a rare disease of unknown aetiology related possibly to disturbed cerebrospinal fluid (CSF) dynamics and characterised by elevated intracranial pressure (ICP) causing optic nerve atrophy if not timely treated. We studied CSF dynamics of the IIH patients based on the available literature and our well-defined cohort.Method: A literature review was performed from PubMed between 1980 and 2020 in compliance with the PRISMA guideline. Our study includes 59 patients with clinical, demographical, neuro-ophthalmological, radiological, outcome data, and lumbar CSF pressure measurements for suspicion of IIH; 39 patients had verified IIH while 20 patients did not according to Friedman’s criteria, hence referred to as symptomatic controls.Results: The literature review yielded 19 suitable studies; 452 IIH patients and 264 controls had undergone intraventricular or lumbar CSF pressure measurements. In our study, the mean CSF pressure, pulse amplitudes, power of respiratory waves (RESP), and the pressure constant (P0) were higher in IIH than symptomatic controls (p < 0.01). The mean CSF pressure was higher in IIH patients with psychiatric comorbidity than without (p < 0.05). In IIH patients without acetazolamide treatment, the RAP index and power of slow waves were also higher (p < 0.05). IIH patients with excess CSF around the optic nerves had lower relative pulse pressure coefficient (RPPC) and RESP than those without (p < 0.05).Conclusions: Our literature review revealed increased CSF pressure, resistance to CSF outflow and sagittal sinus pressure (SSP) as key findings in IIH. Our study confirmed significantly higher lumbar CSF pressure and increased CSF pressure waves and RAP index in IIH when excluding patients with acetazolamide treatment. In overall, the findings reflect decreased craniospinal compliance and potentially depleted cerebral autoregulation resulting from the increased CSF pressure in IIH. The increased slow waves in patients without acetazolamide may indicate issues in autoregulation, while increased P0 could reflect the increased SSP.
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| 8. |
- Dagnelund, Daniel, et al.
(författare)
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Identification of an isolated arsenic antisite defect in GaAsBi
- 2014
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 104:5, s. 052110-
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Tidskriftsartikel (refereegranskat)abstract
- Optically detected magnetic resonance and photoluminescence spectroscopy are employed to study grown-in defects in GaAs0.985Bi0.015 epilayers grown by molecular beam epitaxy. The dominant paramagnetic defect is identified as an isolated arsenic antisite, As-Ga, with an electron g-factor of 2.03 +/- 0.01 and an isotropic hyperfine interaction constant A (900 +/- 620) x 10(-4) cm(-1). The defect is found to be preferably incorporated during the growth at the lowest growth temperature of 270 degrees C, but its formation can be suppressed upon increasing growth temperature to 315 degrees C. The As-Ga concentration is also reduced after post-growth rapid thermal annealing at 600 degrees C.
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| 9. |
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| 10. |
- Gallego-Marcos, Ignacio, et al.
(författare)
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Pool stratification and mixing during a steam injection through spargers: analysis of the PPOOLEX and PANDA experiments
- 2018
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Ingår i: Nuclear Engineering and Design. - : Elsevier. - 0029-5493 .- 1872-759X. ; 337, s. 300-316
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Tidskriftsartikel (refereegranskat)abstract
- Spargers are multi-hole injection pipes used in Boiling Water Reactors (BWR) and Advanced Pressurized (AP) reactors to condense steam in large water pools. A steam injection induces heat, momentum and mass sources that depend on the steam injection conditions and can result in thermal stratification or mixing of the pool. Thermal stratification reduces the steam condensation capacity of the pool, increases the pool surface temperature and thus the containment pressure. Development of models with predictive capabilities requires the understanding of basic phenomena that govern the behavior of the complex multi-scale system. The goals of this work are (i) to analyze and interpret the experiments on steam injection into a pool through spargers performed in the large-scale facilities of PPOOLEX and PANDA, and (ii) to discuss possible modelling approaches for the observed phenomena. A scaling approach was developed to address the most important physical phenomena and regimes relevant to prototypic plant conditions. The focus of the tests was on the low steam mass flux and oscillatory bubble condensation regimes, which are expected during a long-term steam injection transient, e.g. in the case of a Station Black Out (SBO). Exploratory tests were also done for chugging and stable jet conditions. The results showed a similar behavior in PPOOLEX and PANDA in terms of jet induced by steam condensation, pool stratification, and development of hot layer and erosion of the cold one. A correlation using the Richardson number is proposed to model the erosion rate of the cold layer as a function of the pool dimensions and steam injection conditions.
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