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| 3. |
- Faraz, S. M., et al.
(författare)
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Effect of annealing temperature on the interface state density of n-ZnO nanorod/p-Si heterojunction diodes
- 2021
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Ingår i: Open Physics. - : De Gruyter Open Ltd. - 2391-5471. ; 19:1, s. 467-476
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Tidskriftsartikel (refereegranskat)abstract
- The effect of post-growth annealing treatment of zinc oxide (ZnO) nanorods on the electrical properties of their heterojunction diodes (HJDs) is investigated. ZnO nanorods are synthesized by the low-temperature aqueous solution growth technique and annealed at temperatures of 400 and 600°C. The as-grown and annealed nanorods are studied by scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. Electrical characterization of the ZnO/Si heterojunction diode is done by current–voltage (I–V) and capacitance–voltage (C–V) measurements at room temperature. The barrier height (ϕB), ideality factor (n), doping concentration and density of interface states (NSS) are extracted. All HJDs exhibited a nonlinear behavior with rectification factors of 23, 1,596 and 309 at ±5 V for the as-grown, 400 and 600°C-annealed nanorod HJDs, respectively. Barrier heights of 0.81 and 0.63 V are obtained for HJDs of 400 and 600°C-annealed nanorods, respectively. The energy distribution of the interface state density has been investigated and found to be in the range 0.70 × 1010 to 1.05 × 1012 eV/cm2 below the conduction band from EC = 0.03 to EC = 0.58 eV. The highest density of interface states is observed in HJDs of 600°C-annealed nanorods. Overall improved behavior is observed for the heterojunctions diodes of 400°C-annealed ZnO nanorods. © 2021 Sadia Muniza Faraz et al.
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| 4. |
- Khan, H. R., et al.
(författare)
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Design of a Broadband Current Mode Class-D Power Amplifier with Harmonic Suppression
- 2014
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Ingår i: 2014 IEEE 12TH INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS). - : IEEE. - 9781479948857 ; , s. 169-172
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Konferensbidrag (refereegranskat)abstract
- Current Mode Class-D Power Amplifiers (CMC-DPA) are attractive for fully integrated PA implementation as the output capacitance of the active device can be absorbed in the output matching network that can be realized with minimum number of components. This paper presents a simplified design approach for CMCD PA design using an integrated balun transformers. Also, expressions are derived for the optimum device sizing for second harmonic suppression resulting in improved efficiency. The amplifier is implemented in 130 nm CMOS process and encapsulated in QFN package. Measurement results show that the amplifier exhibits broadband response between 1.4 GHz and 2.1 GHz with peak output power of 26.8 dBm at 1.8 GHz using a 2.4 V supply. PAE remains above 40% for the entire range while peak PAE and drain efficiency are 45% and 48%, respectively.
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| 5. |
- Khan, H. R., et al.
(författare)
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PWM with Differential Class-E Amplifier for Efficiency Enhancement at Back-Off Power Levels
- 2014
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Ingår i: 2014 IEEE 57TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS). - : IEEE. - 9781479941322 ; , s. 607-610
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Konferensbidrag (refereegranskat)abstract
- A simplified output matching network for pulse width modulated Class-E Power Amplifier for efficiency enhancement at back-off power level is proposed. The shunt capacitance and the series inductance in the Class-E PA are realized through capacitor banks that are tuned according to the duty cycle to meet ZVS conditions. The differential PA design is implemented in 130 nm CMOS technology achieving maximum Pout of 24.8 dBm at 1.8 GHz with PAE better than 38% at 50% duty cycle. The output power is modulated with the input duty cycle and provides 6.2 dB back-off power level keeping PAE almost constant around 38%.
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- Mackay, Donna S, et al.
(författare)
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Screening of a Large Cohort of Leber Congenital Amaurosis and Retinitis Pigmentosa Patients Identifies Novel LCA5 Mutations and New Genotype-Phenotype Correlations
- 2013
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Ingår i: Human Mutation. - : John Wiley & Sons. - 1059-7794 .- 1098-1004. ; 34:11, s. 1537-1546
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Tidskriftsartikel (refereegranskat)abstract
- This study was undertaken to investigate the prevalence of sequence variants in LCA5 in patients with Leber congenital amaurosis (LCA), early-onset retinal dystrophy (EORD), and autosomal recessive retinitis pigmentosa (arRP); to delineate the ocular phenotypes; and to provide an overview of all published LCA5 variants in an online database. Patients underwent standard ophthalmic evaluations after providing informed consent. In selected patients, optical coherence tomography (OCT) and fundus autofluorescence imaging were possible. DNA samples from 797 unrelated patients with LCA and 211 with the various types of retinitis pigmentosa (RP) were screened by Sanger sequence analysis of all LCA5 exons and intron/exon junctions. Some LCA patients were prescreened by APEX technology or selected based on homozygosity mapping. In silico analyses were performed to assess the pathogenicity of the variants. Segregation analysis was performed where possible. Published and novel LCA5 variants were collected, amended for their correct nomenclature, and listed in a Leiden Open Variation Database (LOVD). Sequence analysis identified 18 new probands with 19 different LCA5 variants. Seventeen of the 19 LCA5 variants were novel. Except for two missense variants and one splice site variant, all variants were protein-truncating mutations. Most patients expressed a severe phenotype, typical of LCA. However, some LCA subjects had better vision and intact inner segment/outer segment (IS/OS) junctions on OCT imaging. In two families with LCA5 variants, the phenotype was more compatible with EORD with affected individuals displaying preserved islands of retinal pigment epithelium. One of the families with a milder phenotype harbored a homozygous splice site mutation; a second family was found to have a combination of a stop mutation and a missense mutation. This is the largest LCA5 study to date. We sequenced 1,008 patients (797 with LCA, 211 with arRP) and identified 18 probands with LCA5 mutations. Mutations in LCA5 are a rare cause of childhood retinal dystrophy accounting for ∼2% of disease in this cohort, and the majority of LCA5 mutations are likely null. The LCA5 protein truncating mutations are predominantly associated with LCA. However, in two families with the milder EORD, the LCA5 gene analysis revealed a homozygous splice site mutation in one and a stop mutation in combination with a missense mutation in a second family, suggesting that this milder phenotype is due to residual function of lebercilin and expanding the currently known phenotypic spectrum to include the milder early onset RP. Some patients have remaining foveal cone structures (intact IS/OS junctions on OCT imaging) and remaining visual acuities, which may bode well for upcoming treatment trials.
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| 7. |
- Ashraf, H., et al.
(författare)
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Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy
- 2010
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Ingår i: Journal of Applied Physics. - : American Institute of Physics. - 0021-8979 .- 1089-7550. ; 108:10
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Tidskriftsartikel (refereegranskat)abstract
- Electric field-enhanced emission of electrons from a deep level defect in GaN grown by hydride vapor phase epitaxy has been studied. Using the field dependent mode of conventional deep level transient spectroscopy (DLTS), several frequency scans were performed keeping applied electric field (12.8-31.4 MV/m) and sample temperature (300-360 K) constant. Arrhenius plots of the resultant data yielded an activation energy of the electron trap E ranging from E-c -0.48 +/- 0.02 eV to E-c-0.35 +/- 0.02 eV, respectively. The extrapolation of the as-measured field dependent data (activation energy) revealed the zero-field emission energy (pure thermal activation energy) of the trap to be 0.55 +/- 0.02 eV. Various theoretical models were applied to justify the field-enhanced emission of the carriers from the trap. Eventually it was found that the Poole-Frenkel model associated with a square well potential of radius r=4.8 nm was consistent with the experimental data, and, as a result, the trap is attributed to a charged impurity. Earlier, qualitative measurements like current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed, and screening parameters of the device were extracted to ascertain the reliability of DLTS data.
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| 8. |
- Azam, Sher, 1971-, et al.
(författare)
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Broadband Power Amplifier performance of SiC MESFET and CostEffective SiGaN HEMT
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- This paper describes the broadband power amplifier performance of two differentwide band gap technology transistors at 0.7 to 1.8 GHz using cost effective NitronexGaN HEMT on Silicon (Si) and Cree Silicon Carbide MESFET. The measured resultsfor GaN amplifier are; maximum output power at Vd = 28 V is 42.5 dBm (~18 W), amaximum PAE of 39 % and a maximum gain of 19.5 dB is obtained. The measuredmaximum output power for the SiC amplifier at Vd = 48 V was 41.3 dBm (~13.7 W),with a PAE of 32 % and a power gain above 10 dB. At a drain bias of Vd = 66 V at700 MHz for SiC MESFET amplifier the Pmax was 42.2 dBm (~16.6 W) with a PAE of34.4 %.
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| 9. |
- Azam, Sher, et al.
(författare)
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Comparison of Two GaN Transistor Technologies in Broadband Power Amplifiers
- 2010
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Ingår i: MICROWAVE JOURNAL. - : Horizon House Publications, Inc.. - 0192-6225. ; 53:4, s. 184-192
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Tidskriftsartikel (refereegranskat)abstract
- This article compares the performance of two different GaN transistor technologies, GaN HEMT on silicon substrate (PA1) and GaN on SiC (PA2), utilized in two broadband power amplifiers operating at 0.7 to 1.8 GHz. The study explores the broadband power amplifier potential of both GaN HEMT technologies for phased-array radar (PAR) and electronic warfare (EW) systems. The measured maximum output power for PA1 is 42.5 dBm (18 W) with a maximum PAE of 66 percent and a gain of 19.5 dB. The measured maximum output power for PA2 is 40 dBm with a PAE of 37 percent and a power gain slightly above 10 dB. The high power gain, ME, wider bandwidth and unconditional stability was obtained without feedback for the amplifier based on GaN HEMT technology, fabricated on Si substrate.
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| 10. |
- Azam, Sher, 1971-, et al.
(författare)
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High Power, High Efficiency SiC Power Amplifier for Phased ArrayRadar and VHF Applications
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- Wide band gap semiconductor (SiC & GaN) based power amplifiers offer severalsystem critical advantages such as less current leakage, better stability at high temperatureand easier impedance matching. This paper describes the design and fabrication of a singlestageclass-AB power amplifier for 30 to 100 MHz using SiC Schottky gate MetalSemiconductor Field Effect Transistor (MESFET). The maximum output power achieved is46.2 dBm (~42 W) at 50 V DC supply voltage at the drain. The maximum power gain is 21dB and a maximum PAE of 62 %. The amplifier performance was also checked at a higherdrain bias of 60 V at 50 MHz. At this bias voltage the maximum output power was 46.7dBm (~47 W) with a power gain of 21 dB and a maximum PAE of 42.7 %. An averageOIP3 of 54 dBm have been achieved for this amplifier.
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