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Sökning: WFRF:(Raadu Michael A.)

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1.
  • Rudolph, M., et al. (författare)
  • On the population density of the argon excited levels in a high power impulse magnetron sputtering discharge
  • 2022
  • Ingår i: Physics of Plasmas. - : AIP Publishing. - 1070-664X .- 1089-7674. ; 29:2, s. 023506-
  • Tidskriftsartikel (refereegranskat)abstract
    • Population densities of excited states of argon atoms in a high power impulse magnetron sputtering (HiPIMS) discharge are examined using a global discharge model and a collisional-radiative model. Here, the ionization region model (IRM) and the Orsay Boltzmann equation for electrons coupled with ionization and excited states kinetics (OBELIX) model are combined to obtain the population densities of the excited levels of the argon atom in a HiPIMS discharge. The IRM is a global plasma chemistry model based on particle and energy conservation of HiPIMS discharges. OBELIX is a collisional-radiative model where the electron energy distribution is calculated self-consistently from an isotropic Boltzmann equation. The collisional model constitutes 65 individual and effective excited levels of the argon atom. We demonstrate that the reduced population density of high-lying excited argon states scales with (p*)(-6), where p * is the effective quantum number, indicating the presence of a multistep ladder-like excitation scheme, also called an excitation saturation. The reason for this is the dominance of electron impact processes in the population and de-population of high-lying argon states in combination with a negligible electron-ion recombination.
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2.
  • Antunes, V. G., et al. (författare)
  • Influence of the magnetic field on the extension of the ionization region in high power impulse magnetron sputtering discharges
  • 2023
  • Ingår i: Plasma sources science & technology. - : IOP Publishing. - 0963-0252 .- 1361-6595. ; 32:7
  • Tidskriftsartikel (refereegranskat)abstract
    • The high power impulse magnetron sputtering (HiPIMS) discharge brings about increased ionization of the sputtered atoms due to an increased electron density and efficient electron energization during the active period of the pulse. The ionization is effective mainly within the electron trapping zone, an ionization region (IR), defined by the magnet configuration. Here, the average extension and the volume of the IR are determined based on measuring the optical emission from an excited level of the argon working gas atoms. For particular HiPIMS conditions, argon species ionization and excitation processes are assumed to be proportional. Hence, the light emission from certain excited atoms is assumed to reflect the IR extension. The light emission was recorded above a 100 mm diameter titanium target through a 763 nm bandpass filter using a gated camera. The recorded images directly indicate the effect of the magnet configuration on the average IR size. It is observed that the shape of the IR matches the shape of the magnetic field lines rather well. The IR is found to expand from 10 and 17 mm from the target surface when the parallel magnetic field strength 11 mm above the racetrack is lowered from 24 to 12 mT at a constant peak discharge current.
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3.
  • Rudolph, M., et al. (författare)
  • Influence of the magnetic field on the discharge physics of a high power impulse magnetron sputtering discharge
  • 2022
  • Ingår i: Journal of Physics D. - : IOP Publishing. - 0022-3727 .- 1361-6463. ; 55:1
  • Tidskriftsartikel (refereegranskat)abstract
    • The magnetic field is a key feature that distinguishes magnetron sputtering from simple diode sputtering. It effectively increases the residence time of electrons close to the cathode surface and by that increases the energy efficiency of the discharge. This becomes apparent in high power impulse magnetron sputtering (HiPIMS) discharges, as small changes in the magnetic field can result in large variations in the discharge characteristics, notably the peak discharge current and/or the discharge voltage during a pulse. Here, we analyze the influence of the magnetic field on the electron density and temperature, how the discharge voltage is split between the cathode sheath and the ionization region, and the electron heating mechanism in a HiPIMS discharge. We relate the results to the energy efficiency of the discharge and discuss them in terms of the probability of target species ionization. The energy efficiency of the discharge is related to the fraction of pulse power absorbed by the electrons. Ohmic heating of electrons in the ionization region leads to higher energy efficiency than electron energization in the sheath. We find that the electron density and ionization probability of the sputtered species depend largely on the discharge current. The results suggest ways to adjust electron density and electron temperature using the discharge current and the magnetic field, respectively, and how they influence the ionization probability.
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4.
  • Babu, Swetha Suresh, et al. (författare)
  • Modeling of high power impulse magnetron sputtering discharges with tungsten target
  • 2022
  • Ingår i: Plasma sources science & technology. - : IOP Publishing. - 0963-0252 .- 1361-6595. ; 31:6, s. 065009-
  • Tidskriftsartikel (refereegranskat)abstract
    • The ionization region model (IRM) is applied to model a high power impulse magnetron sputtering discharge with a tungsten target. The IRM gives the temporal variation of the various species and the average electron energy, as well as internal discharge parameters such as the ionization probability and the back-attraction probability of the sputtered species. It is shown that an initial peak in the discharge current is due to argon ions bombarding the cathode target. After the initial peak, the W+ ions become the dominating ions and remain as such to the end of the pulse. We demonstrate how the contribution of the W+ ions to the total discharge current at the target surface increases with increased discharge voltage for peak discharge current densities J (D,peak) in the range 0.33-0.73 A cm(-2). For the sputtered tungsten the ionization probability increases, while the back-attraction probability decreases with increasing discharge voltage. Furthermore, we discuss the findings in terms of the generalized recycling model and compare to experimentally determined deposition rates and find good agreement.
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5.
  • Brenning, Nils, et al. (författare)
  • A bulk plasma model for dc and HiPIMS magnetrons
  • 2008
  • Ingår i: PLASMA SOURCES SCIENCE and TECHNOLOGY. - : IOP Publishing. - 0963-0252 .- 1361-6595. ; 17:4, s. 045009-
  • Tidskriftsartikel (refereegranskat)abstract
    • A plasma discharge model has been developed for the bulk plasma (also called the extended presheath) in sputtering magnetrons. It can be used both for high power impulse magnetron sputtering (HiPIMS) and conventional dc sputtering magnetrons. Demonstration calculations are made for the parameters of the HiPIMS sputtering magnetron at Link "oping University, and also benchmarked against results in the literature on dc magnetrons. New insight is obtained regarding the structure and time development of the currents, the electric fields and the potential profiles. The transverse resistivity eta(perpendicular to) has been identified as having fundamental importance both for the potential profiles and for the motion of ionized target material through the bulk plasma. New findings are that in the HiPIMS mode, as a consequence of a high value of eta(perpendicular to), (1) there can be an electric field reversal that in our case extends 0.01-0.04m from the target, (2) the electric field in the bulk plasma is typically an order of magnitude weaker than in dc magnetrons, (3) in the region of electric field reversal the azimuthal current is diamagnetic in nature, i.e. mainly driven by the electron pressure gradient, and actually somewhat reduced by the electron Hall current which here has a reversed direction and (4) the azimuthal current above the racetrack can, through resistive friction, significantly influence the motion of the ionized fraction of the sputtered material and deflect it sideways, away from the target and towards the walls of the magnetron.
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6.
  • Brenning, Nils, et al. (författare)
  • A unified treatment of self-sputtering, process gas recycling, and runaway for high power impulse sputtering magnetrons
  • 2017
  • Ingår i: Plasma sources science & technology. - : Institute of Physics (IOP). - 0963-0252 .- 1361-6595. ; 26:12
  • Tidskriftsartikel (refereegranskat)abstract
    • The combined processes of self-sputter (SS)-recycling and process gas recycling in high power impulse magnetron sputtering (HiPIMS) discharges are analyzed using the generalized recycling model (GRM). The study uses experimental data from discharges with current densities from the direct current magnetron sputtering range to the HiPIMS range, and using targets with self-sputter yields Y-SS from approximate to 0.1 to 2.6. The GRM analysis reveals that, above a critical current density of the order of J(crit) approximate to 0.2 A cm(-2), a combination of self-sputter recycling and gas-recycling is generally the case. The relative contributions of these recycling mechanisms, in turn, influence both the electron energy distribution and the stability of the discharges. For high self-sputter yields, above Y-SS approximate to 1, the discharges become dominated by SS-recycling, contain few hot secondary electrons from sheath energization, and have a relatively low electron temperature T-e. Here, stable plateau values of the discharge current develop during long pulses, and these values increase monotonically with the applied voltage. For low self-sputter yields, below Y-SS approximate to 0.2, the discharges above J(crit) are dominated by process gas recycling, have a significant sheath energization of secondary electrons and a higher T-e, and the current evolution is generally less stable. For intermediate values of YSS the discharge character gradually shifts between these two types. All of these discharges can, at sufficiently high discharge voltage, give currents that increase rapidly in time. For such cases we propose that a distinction should be made between 'unlimited' runaway and 'limited' runaway: in unlimited runaway the current can, in principle, increase without a limit for a fixed discharge voltage, while in limited runaway it can only grow towards finite, albeit very high, levels. For unlimited runway Y-SS > 1 is found to be a necessary criterion, independent of the amount of gas-recycling in the discharge.
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7.
  • Brenning, Nils, et al. (författare)
  • Conditions for plasmoid penetration across abrupt magnetic barriers
  • 2005
  • Ingår i: Physics of Plasmas. - : AIP Publishing. - 1070-664X .- 1089-7674. ; 12:1
  • Tidskriftsartikel (refereegranskat)abstract
    • The penetration of plasma clouds, or plasmoids, across abrupt magnetic barriers (of the scale less than a few ion gyro radii, using the plasmoid directed velocity) is studied. The insight gained earlier, from detailed experimental and computer simulation investigations of a case study, is generalized into other parameter regimes. It is concluded for what parameters a plasi-noid should be expected to penetrate the magnetic barrier through self-polarization, penetrate through magnetic expulsion, or be rejected from the barrier. The scaling parameters are n(e), upsilon(o), B-perpendicular to, m(i), T-i, and the width w of the plasmoid. The scaling is based on a model for strongly driven, nonlinear magnetic field diffusion into a plasma which is a generalization of the earlier laboratory findings. The results are applied to experiments earlier reported in the literature, and also to the proposed application of impulsive penetration of plasmoids from the solar wind into the Earth's magnetosphere.
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8.
  • Brenning, Nils, et al. (författare)
  • Faster-than-Bohm Cross-B Electron Transport in Strongly Pulsed Plasmas
  • 2009
  • Ingår i: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 103:22
  • Tidskriftsartikel (refereegranskat)abstract
    • We report the empirical discovery of an exceptionally high cross-B electron transport rate in magnetized plasmas, in which transverse currents are driven with abruptly applied high power. Experiments in three different magnetic geometries are analyzed, covering several orders of magnitude in plasma density, magnetic field strength, and ion mass. It is demonstrated that a suitable normalization parameter is the dimensionless product of the electron (angular) gyrofrequency and the effective electron-ion momentum transfer time, omega(ge)tau(EFF), by which all of diffusion, cross-resistivity, cross-B current conduction, and magnetic field diffusion can be expressed. The experiments show a remarkable consistency and yield close to a factor of 5 greater than the Bohm-equivalent values of diffusion coefficient D-perpendicular to, magnetic-diffusion coefficient D-B, Pedersen conductivity sigma(P), and transverse resistivity eta(perpendicular to).
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9.
  • Brenning, Nils, et al. (författare)
  • HiPIMS optimization by using mixed high-power and low-power pulsing
  • 2021
  • Ingår i: Plasma sources science & technology. - : IOP Publishing. - 0963-0252 .- 1361-6595. ; 30:1
  • Tidskriftsartikel (refereegranskat)abstract
    • The possibility to optimize a high-power impulse magnetron sputtering (HiPIMS) discharge through mixing two different power levels in the pulse pattern is investigated. Standard HiPIMS pulses are used to create the ions of the film-forming material. After each HiPIMS pulse an off-time follows, during which no voltage (or, optionally, a reversed voltage) is applied, letting the remaining ions in the magnetic trap escape towards the substrate. After these off-times, a long second pulse with lower amplitude, in the dc magnetron sputtering range, is applied. During this pulse, which is continued up to the following HiPIMS pulse, mainly neutrals of the film-forming material are produced. This pulse pattern makes it possible to achieve separate optimization of the ion production, and of the neutral atom production, that constitute the film-forming flux to the substrate. The optimization process is thereby separated into two sub-problems. The first sub-problem concerns minimizing the energy cost for ion production, and the second sub-problem deals with how to best split a given allowed discharge power between ion production and neutral production. The optimum power split is decided by the lowest ionized flux fraction that gives the desired film properties for a specific application. For the first sub-problem we describe a method where optimization is achieved by the selection of five process parameters: the HiPIMS pulse amplitude, the HiPIMS pulse length, the off-time, the working gas pressure, and the magnetic field strength. For the second sub-problem, the splitting of power between ion and neutral production, optimization is achieved by the selection of the values of two remaining process parameters, the HiPIMS pulse repetition frequency and the discharge voltage of the low-power pulse.
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10.
  • Brenning, Nils, et al. (författare)
  • Optimization of HiPIMS discharges : The selection of pulse power, pulse length, gas pressure, and magnetic field strength
  • 2020
  • Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 38:3
  • Tidskriftsartikel (refereegranskat)abstract
    • In high power impulse magnetron sputtering (HiPIMS) operation, there are basically two goals: a high ionized flux fraction of the sputtered target material and a high deposition rate. In this work, it is demonstrated that the former always comes at the cost of the latter. This makes a choice necessary, referred to as the HiPIMS compromise. It is here proposed that this compromise is most easily made by varying the discharge current amplitude, which opens up for optimization of additionally four external process parameters: the pulse length, the working gas pressure, the magnetic field strength, and the degree of magnetic unbalance to achieve the optimum combination of the ionized flux fraction and the deposition rate. As a figure of merit, useful for comparing different discharges, ( 1 - beta t ) is identified, which is the fraction of ionized sputtered material that escapes back-attraction toward the cathode target. It is shown that a discharge with a higher value of ( 1 - beta t ) always can be arranged to give better combinations of ionization and deposition rate than a discharge with a lower ( 1 - beta t ). Maximization of ( 1 - beta t ) is carried out empirically, based on data from two discharges with Ti targets in Ar working gas. These discharges were first modeled in order to convert measured plasma parameters to values of ( 1 - beta t ). The combined effects of varying the different process parameters were then analyzed using a process flow chart model. The effect of varying the degree of unbalance in the studied range was small. For the remaining three parameters, it is found that optimum is achieved by minimizing the magnetic field strength, minimizing the working gas pressure, and minimizing the pulse length as far as compatible with the requirement to ignite and maintain a stable discharge.
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