| 1. |
- Bakowski, Mietek, et al.
(författare)
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Design and characterization of newly developed 10 kV 2 A SiC p-i-n diode for soft-switching industrial power supply
- 2015
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Ingår i: IEEE Transactions on Electron Devices. - : Institute of Electrical and Electronics Engineers Inc.. - 0018-9383 .- 1557-9646. ; 62:2, s. 366-373
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Tidskriftsartikel (refereegranskat)abstract
- 10 kV, 2 A SiC p-i-n diodes have been designed and fabricated. The devices feature excellent stability of forward characteristics and robust junction termination with avalanche capability of 1 J. The fabricated diodes have been electrically evaluated with respect to dynamic ON-state voltage, reverse recovery behavior, bipolar stability, and avalanche capability. More than 60% reduction of losses has been demonstrated using newly developed 10-kV p-i-n diodes in a multikilowatt high voltage, high-frequency dc/dc soft-switching converter
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| 2. |
- Ranstad, P., et al.
(författare)
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SiC power devices in a soft switching converter including aspects on packaging
- 2014
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Ingår i: ECS Transactions. - : The Electrochemical Society. - 1938-6737 .- 1938-5862. ; , s. 51-59
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Konferensbidrag (refereegranskat)abstract
- In many applications of power electronic converters efficiency and size are important figures of merit. Low losses in the power semiconductors as well as high frequency operation are important factors to obtain compact and highly efficient converters. The converters considered in this paper are off-line industrial power supplies (~100 kW) operating at a switching frequency range of 20-40 kHz. Replacing Si power devices by SiC counterparts enables both lower losses and increased switching frequencies. In this paper, experimental results from SiC PiN diodes, (output rectifiers) and SiC MOSFETs, (active switches) are presented.
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| 3. |
- Liakos, Evangelos, et al.
(författare)
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Benefits of implementing a duty-ratio controlled parallel-resonant converter with SiC MOSFETs instead of Si IGBTs
- 2021
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Ingår i: 2021 23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe. - : IEEE. - 9789075815375
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Konferensbidrag (refereegranskat)abstract
- In this paper, the operation of a parallel resonant converter with a capacitive output filter that exploits the parasitic components of its transformer is described briefly. Measurements from a high power DC pulsed generator with Si IGBTs are obtained. Finally, the experimentally calculated losses of the Si IGBTs are compared with SiC MOSFETs' losses using simulations of the system. © 2021 EPE Association.
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| 4. |
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| 5. |
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| 6. |
- Sadik, Diane, 1988-, et al.
(författare)
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Effect of Parasitic Inductance in a Soft-Switching SiC Power Converter Topics : 1 b: New Materials and Active Devices 7b: High-voltage DC Power Supplies (U)
- 2018
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Ingår i: 2018 20th European Conference on Power Electronics and Applications, EPE 2018 ECCE Europe. - : Institute of Electrical and Electronics Engineers Inc.. - 9789075815283
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Konferensbidrag (refereegranskat)abstract
- Wide Bandgap power semiconductors such as SiC MOSFETs, have enabled compact and highly efficient power converters operated at higher frequencies. However, parasitic inductance of the package may significantly increase power losses and limit the operation. This paper aims to quantify experimentally these losses in a soft-switching converter. A 'removable' stray inductance is implemented in a setup consisting of discrete SiC MOSFET units. Thus, the power loss of the transistors with and without stray inductance can be compared. Similarly slower switching speeds are also implemented to fully emulate a 62-mm module. The power loss induced by the package can thus be evaluated.
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| 7. |
- Sadik, Diane-Perl, et al.
(författare)
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Humidity testing of SiC power MOSFETs
- 2016
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Ingår i: 2016 IEEE 8th International Power Electronics and Motion Control Conference, IPEMC-ECCE Asia 2016. - : Institute of Electrical and Electronics Engineers (IEEE). - 9781509012107 ; , s. 3131-3136
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Konferensbidrag (refereegranskat)abstract
- Humidity and outdoor application are a challenge for Silicon (Si) and Silicon Carbide (SiC) applications. This paper investigates the effect of humidity on SiC power MOSFET modules in a real application where no acceleration factors such as pressure or high temperature are applied. Since SiC devices can operate at higher temperature than Si, the high-temperature acceleration factor may be obsolete. Moreover, the humidity might be more critical when the temperature inside the converter enclosure and modules housing is varying with daily temperature variations and weather constraints in harsh environments. The breakdown voltages of the humidity-exposed modules are monitored regularly over a extended period of time in order to detect any increase of leakage current which indicates humidity-induced degradation. After 630 hours, the modules operated outdoor presented an increased leakage current at 1.2 kV and over the whole range of applied voltage.
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| 8. |
- Sadik, Diane-Perle, et al.
(författare)
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Investigation of long-term parameter variations of SiC power MOSFETs
- 2015
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Ingår i: Power Electronics and Applications (EPE’15 ECCE-Europe), 2015 17th European Conference on. - : IEEE. ; , s. 1-10
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Konferensbidrag (refereegranskat)abstract
- Experimental investigations on the gate-oxide and body-diode reliability of commercially available Silicon Carbide (SiC) MOSFETs from the second generation are performed. The body-diode conduction test is performed with a current density of 50 A/cm2 in order to determine if the body-diode of the MOSFETs is free from bipolar degradation. The second test is stressing the gate-oxide. A negative bias is applied on the gate oxide in order to detect and quantify potential drifts.
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| 9. |
- Tolstoy, Georg, et al.
(författare)
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Dual control used in series-loaded resonant converter with SiC devices
- 2015
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Ingår i: Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on. - : IEEE. ; , s. 495-501
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Konferensbidrag (refereegranskat)abstract
- This paper presents the performance of silicon carbide (SiC) switches in a series-loaded resonant (SLR) converter with dual control (DuC). It is shown that the SiC metal oxide-semiconductor field-effect transistor (MOSFET) with DuC increases the overall efficiency of the SLR converter compared to frequency modulation (FM). For the SiC bipolar junction transistors (BJT), the loss reduction with DuC instead of FM is not as dramatic as for the MOSFET case. Regardless of which transistor type used, the switching losses are around 20 % of the total losses at around 25 kHz. With DuC an almost constant switching frequency is used over the full voltage range compared to FM were the switching frequency increases by 13 %. Additionally a reduction of capacitive snubbers is achieved with DuC.
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| 10. |
- Tolstoy, Georg, et al.
(författare)
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Experimental evaluation of SiC BJTs and SiC MOSFETs in a series-loaded resonant converter
- 2015
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Ingår i: Power Electronics and Applications (EPE’15 ECCE-Europe), 2015 17th European Conference on. - : IEEE. ; , s. 1-9
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Konferensbidrag (refereegranskat)abstract
- SiC devices such as MOSFETs and BJTs have proven themselves to be contenders to improve the efficiency of resonant converters. The losses of the full-bridge inverter are well below 1% of the rated power at switching frequencies up to 200 kHz, making it possible to reach even higher frequencies. An experimental setup is built and two different full-bridge inverters are tested. One is built with SiC MOSFETs and no additional anti-parallel diodes and one with SiC BJTs and SiC Schottky diodes.
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