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| 2. |
- Aradi, B, et al.
(författare)
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Boron centers in 4H-SiC
- 2001
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Ingår i: Materials science Forum, Vols. 353-356. ; , s. 455-458
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Konferensbidrag (refereegranskat)abstract
- The origin of the "deep boron related acceptor level" in SIC is subject to a lot of controversy. Based on ENDOR investigations, a B-Si+V-C model was suggested, while PL studies indicated the acceptor on the carbon sublattice. Our former ab initio LDA molecular cluster calculation showed that in the B-Si+V-C complex the carbon vacancy acts as the acceptor. Now, ah initio LDA supercell calculations have been carried out for boron-related complexes to calculate the occupation levels in 4H-SiC. It has been found that the 0/- level for the B-Si+V-C complex lies in the upper half of the gap, therefore it can be disregarded as the origin of the "deep boron-related acceptor level". Investigating other feasible boron-related complexes, B-Si+Si-C appears to be the best candidate.
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| 3. |
- Gali, Adam, et al.
(författare)
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Anti-site pair in SiC : A model of the DI center
- 2003
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Ingår i: Physica B. - : Elsevier BV. ; , s. 175-179
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Konferensbidrag (refereegranskat)abstract
- The DI low-temperature photoluminescence center is a well-known defect stable up to 1700°C annealing in SiC, still its structure is not known after decades of study. Combining experimental and theoretical studies in this paper we will show that the properties of an anti-site pair can reproduce the measured one-electron level position and local vibration modes of the D I center and the model is consistent with other experimental findings as well. We give theoretical values of the hyperfine constants of the anti-site pair in its paramagnetic state as a means to confirm our model. © 2003 Elsevier B.V. All rights reserved.
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| 4. |
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| 5. |
- Gali, Adam, et al.
(författare)
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Correlation between the antisite pair and the D-I center in SiC
- 2003
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 67:15
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Tidskriftsartikel (refereegranskat)abstract
- The D-I low temperature photoluminescence center is a well-known defect stable up to 1700 degreesC annealing in SiC, still its structure is not yet known. Combining experimental and theoretical studies, in this paper we will show that the properties of an antisite pair can reproduce the measured one-electron level position and local vibration modes of the D-I center, and are consistent with other experimental findings as well. We give theoretical values of the hyperfine constants of the antisite pair in its paramagnetic state as a means to confirm a model.
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| 6. |
- Scholle, A, et al.
(författare)
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Magnetic characterization of conductance electrons in GaN
- 2010
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Ingår i: Physica Status Solidi, Vol. 247. - : John Wiley and Sons, Ltd. ; , s. 1728-1731
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Konferensbidrag (refereegranskat)abstract
- New electron paramagnetic resonance (EPR) measurements in hexagonal and cubic GaN intentionally doped with silicon are presented. In both type of samples the well-known EPR resonance of the dominant shallow donor is observed, whereby the g-tensors are determined to g(parallel to) = 1.9512, g(perpendicular to) = 1.9485 (free-standing hexagonal GaN) and g = 1.9533 (cubic GaN layer grown on 3C-SiC substrate). The spectra show an exceptionally small line width below 0.4 mT and contain no further signature. As a result, beside the line width itself, the EPR line is characterized by its g-tensor exclusively. With the help of a qualitative analysis of the Si donor wave function within effective mass theory (EMT) and a followed up calculation of the hyperfine (HF) splittings in the framework of density functional theory (DFT) the characteristic shape of the EPR lines can be explained by an enhanced delocalization of the unpaired electrons of shallow Si donors at the gallium sublattice due to overlapping impurity and conduction bands.
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