| 1. |
- Delmas, M., et al.
(författare)
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HOT MWIR T2SL detectors to reduce system : Size, weight, and power
- 2021
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Ingår i: Sensors, Systems, and Next-Generation Satellites XXV. - : SPIE - International Society for Optical Engineering.
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Konferensbidrag (refereegranskat)abstract
- In 2019, IRnova launched a full-scale production of a reduced size, weight and power integrated detector dewar cooler assemblies (Oden MW; VGA format with 15 μm pixel pitch) covering the full mid-wavelength infrared spectral domain (3.7 μm - 5.1 μm). Oden MW exhibits excellent performance with operating temperatures up to 110 K at F/5.5 with typical values of temporal and spatial noise equivalent temperature of 22 mK and 7 mK, respectively, and an operability higher than 99.85%. More recently, IRnova developed a new detector design with a cut-off wavelength of 5.3 μm which can potentially allow an operating temperature of the detector up to 150K with excellent performance demonstrated on single pixels with a quantum efficiency as high as 46% at 4 μm without antireflection coating, a turn on bias lower than -100 mV and a dark current density as low as 8 × 10-6 A/cm2, which is a factor of < 5 higher than Rule07. The dark current was also found independent of the device size ranging from 10 μm to 223 μm indicating that surface leakage currents are not limiting the dark current. The achievable operating temperature of an FPA made of this new detector design has been estimated to be <150 K with F/5.5 optics. These outstanding results demonstrate that this new generation of detector design is an excellent candidate for future high operating temperature and high-definition focal plane array.
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| 2. |
- Ramos Santesmases, David, et al.
(författare)
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Optical concentration in fully delineated mid-wave infrared T2SL detectors arrays
- 2023
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 123:18
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Tidskriftsartikel (refereegranskat)abstract
- The dependence of quantum efficiency (QE) on fill factor and pixel pitch is studied theoretically and experimentally in fully delineated type-II superlattice (T2SL) detectors. Theoretically, a 2-dimensional simulation model is used to compute the absorption in the array geometry, which shows an insensitivity of the optical response to the fill factor. This is a result of the photodiode array (PDA) geometry concentrating the light in the pixel area. QE measurements on PDAs with varying pixel pitch (from 225 to 10 μm) and fill factors (from 98% to 64%) confirm this independence of the QE on the fill factor and results in a 50% increase in the photocurrent density in 10 μm pitch PDAs compared to 225 μm pitch PDAs. Furthermore, measurements of the dark current density vs pixel size revealed an absence of surface leakage in these PDAs, which, combined with the increased photocurrent density results in an improved signal-to-noise ratio when reducing the pitch in these T2SL detectors. Finally, this result resolves the QE-modulation transfer function trade-off, as the electrical isolation of the pixel is carried out without impacting the QE of the array.
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| 3. |
- Ramos Santesmases, David, et al.
(författare)
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Simulation and Characterization of the Modulation Transfer Function in Fully Delineated Type-II Superlattices Infrared Detectors
- 2024
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Ingår i: IEEE Transactions on Electron Devices. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9383 .- 1557-9646. ; , s. 1-6
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Tidskriftsartikel (refereegranskat)abstract
- The modulation transfer function (MTF) in fully delineated 15 μ m pitch type-II superlattice (T2SL) mid-wave infrared (IR) detectors is studied theoretically and experimentally. Theoretically, a 2-D model to simulate the spot scan (SS) profile is presented and used to compute the MTF as a function of the wavelength and the array geometry (pitch size, trench width). The dependence of the detector trench on the MTF is also evaluated experimentally by the edge spread function (ESF) method according to the ISO12233 standard. The experimental results show an excellent agreement with the theoretical model, reporting an MTF of 0.61 and 0.60 at the Nyquist frequency for 1 and 2 μ m trench, respectively. With the simulation model, the effect of the increased optical crosstalk for smaller pixel pitch is discussed as a function of the trench width (0.5, 1, and 2 μ m) and incidence angle up to ± 30 ∘ . Simulation results show MTF values at the Nyquist frequency between 0.61–0.62, 0.58–0.60, and 0.55–0.57 with an average degradation of 1%, 2%, and 7% at an angle of ± 30 ∘ compared to normal incidence for the 10, 7.5, and 5 μ m pitch, respectively.
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| 4. |
- Rihtnesberg, D. B., et al.
(författare)
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ZnO nanorods/nanoflowers and their applications
- 2011
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Ingår i: Proc. - Int. NanoElectronics Conf., INEC. - 9781457703799
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Konferensbidrag (refereegranskat)abstract
- Single-crystalline zinc oxide (ZnO) nanorods (NRs) have been synthesized through a chemical bath deposition method. Their diameter is about 80 nm, and their length range from 1 μm to 7 μm can be controlled by growth time. Formation of nanoflower arrays composed of nanorods has been also achieved utilizing a standard micro-fabrication technique. Two types of ZnO nanorods devices are detailed to demonstrate their optoelectronic applications.
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| 5. |
- Wang, Q., et al.
(författare)
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Compacted nanoscale sensors by merging ZnO nanorods with interdigitated electrodes
- 2011
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Ingår i: Proc SPIE Int Soc Opt Eng. - : SPIE. - 9780819486059
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Konferensbidrag (refereegranskat)abstract
- ZnO nanorods (NRs) sensors utilizing hybrid or monolithic integration of the NRs on nanoscale or microscale interdigitated electrodes (IDEs) were fabricated and characterized. The IDEs with their finger electrode width ranging from 50 nm to 3 μm were formed on SiO2/Si substrates by nanoimprint lithography or conventional photolithography and metallization techniques, whereas the ZnO NRs were grown by chemical synthesis method. The average diameter of the ZnO NRs is about 100 nm, and their length can be varied from 2 to 5 μm by controlling growth time. When sensing targets, such as molecules or nanoparticles, bind onto the ZnO NRs, the conductance between IDEs will change. As probing test, II-VI quantum dots (QDs) were attached on the ZnO NRs, and clear responses were obtained by measuring and comparing current-voltage (I-V) characteristic of the sensor before and after binding the QDs.
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| 6. |
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| 7. |
- Åstlund, L, et al.
(författare)
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4H- 6H-SiC UV photodetectors
- 2012
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Ingår i: Phys. Status Solid. ; c9:7, s. 1680-2
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Tidskriftsartikel (refereegranskat)
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