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1.
  • Fischer, Andreas C., et al. (författare)
  • Layer-by-layer 3D printing of Si micro- and nanostructures by Si deposition, ion implantation and selective Si etching
  • 2012
  • Ingår i: 12th IEEE Conference on Nanotechnology (IEEE-NANO), 2012. - : IEEE conference proceedings. - 9781467321983 ; , s. 1-4
  • Konferensbidrag (refereegranskat)abstract
    • In this paper we report a method for layer-by-layer printing of three-dimensional (3D) silicon (Si) micro- and nanostructures. This fabrication method is based on a sequence of alternating steps of chemical vapor deposition of Si and local implantation of gallium (Ga+) ions by focused ion beam (FIB) writing. The defined 3D structures are formed in a final step by selectively wet etching the non-implanted Si in potassium hydroxide (KOH). We demonstrate the viability of the method by fabricating 2 and 3-layer 3D Si structures, including suspended beams and patterned lines with dimensions on the nm-scale.
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2.
  • Riazanova, Anastasia, et al. (författare)
  • Gas-assisted electron-beam-induced nanopatterning of high-quality titanium oxide
  • 2016
  • Ingår i: Nanotechnology. - : Institute of Physics Publishing (IOPP). - 0957-4484 .- 1361-6528. ; 27:11
  • Tidskriftsartikel (refereegranskat)abstract
    • Electron-beam-induced deposition of titanium oxide nanopatterns is described. The precursor is titanium tetra-isopropoxide, delivered to the deposition point through a needle and mixed with oxygen at the same point via a flow through a separate needle. The depositions are free of residual carbon and have an EDX determined stoichiometry of TiO2.2. High resolution transmission electron microscopy and Raman spectroscopy studies reveal an amorphous structure of the fabricated titanium oxide. Ellipsometric characterization of the deposited material reveals a refractive index of 2.2-2.4 RIU in the spectral range of 500-1700 nm and a very low extinction coefficient (lower than 10(-6) in the range of 400-1700 nm), which is consistent with high quality titanium oxide. The electrical resistivity of the titanium oxide patterned with this new process is in the range of 10-40 G Omega cm and the measured breakdown field is in the range of 10-70 V mu m(-1). The fabricated nanopatterns are important for a variety of applications, including field-effect transistors, memory devices, MEMS, waveguide structures, bio-and chemical sensors.
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