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- Kukli, K., et al.
(författare)
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Atomic layer deposition of ZrO2 and HfO2 on deep trenched and planar silicon
- 2007
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 84:9-10, s. 2010-2013
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Tidskriftsartikel (refereegranskat)abstract
- Conformal ZrO2 and HfO2 thin films were grown by atomic layer deposition using novel liquid cyclopentadienyl precursors at 300 degrees C or 350 degrees C on planar Si wafers and deep trenched Si with an aspect ratio of 60:1. The crystal growth and phase content in as-deposited films depended on the precursor, film thickness, and the material grown. The structural and electrical behaviour of the films were somewhat precursor-dependent, revealing better insulating properties in the films grown from oxygen-containing precursors. Also the HfO2 films showed lower leakage compared to ZrO2.
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| 5. |
- Martensson, P, et al.
(författare)
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Use of atomic layer epitaxy for fabrication of Si/TiN/Cu structures
- 1999
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Ingår i: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. - : AMER INST PHYSICS. ; 17:5
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- The properties of titanium nitride deposited by atomic layer epitaxy (ALE) using three different deposition processes, i.e., TiI4+NH3, TiCl4+NH3 and TiCl4+Zn+NH3, as a diffusion barrier between copper and silicon were investigated. After deposition and a
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| 7. |
- Dong Su, Lee, et al.
(författare)
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Quantum dot manipulation in a single-walled carbon nanotube using a carbon nanotube gate
- 2006
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 89:23, s. 233107-1
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Tidskriftsartikel (refereegranskat)abstract
- Cross junctions of carbon nanotubes (CNTs) separated by thin oxide layers have been fabricated, in which the top CNT is used as a local gate to control the electron transport through the lower CNT. Coulomb oscillation was observed in the lower CNTs at low temperatures. The gating field from the upper CNTs is seen to modulate the band structure in the lower CNTs, producing double quantum dot systems. The ability to modulate the electronic structure of CNTs in such a way opens up many possibilities for future electronic and logical nanodevices
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| 8. |
- Duenas, S., et al.
(författare)
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Electrical properties of atomic-layer-deposited thin gadolinium oxide high-k gate dielectrics
- 2007
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Ingår i: Journal of the Electrochemical Society. - : The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 154:10, s. G207-G214
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Tidskriftsartikel (refereegranskat)abstract
- Amorphous or cubic Gd2O3 thin films were grown from tris ( 2,3-dimethyl-2-butoxy)gadolinium( III) , Gd [OC(CH3)(2)CH(CH3)(2))(3)], and H2O precursors at 350 degrees C. As-deposited Gd2O3 films grown on etched (H-terminated) Si(100) exhibited better leakage current-voltage characteristics as well as lower flatband voltage shift than films grown on SiO2/ Si substrates. Interface trap densities were lower in Al/Gd2O3/ hydrofluoric acid (HF)-etched Si samples annealed at rather high temperatures.
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| 9. |
- Dueñas, S., et al.
(författare)
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Experimental investigation of the electrical properties of atomic layer deposited hafnium-rich silicate films on n-type silicon
- 2006
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 100:9, s. 094107-
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Tidskriftsartikel (refereegranskat)abstract
- This work examines the structural and electrical properties of HfSixOy film based metal-insulator-semiconductor capacitors by means of x-ray diffraction, x-ray photoelectron spectroscopy, capacitance-voltage (C-V), deep level transient spectroscopy, and conductance transient (G-t) techniques. Hafnium-rich silicate films were atomic layer deposited onto HF-etched or SiO2 covered silicon. Although as-deposited samples exhibit high interfacial state and disorder-induced gap state densities, a postdeposition thermal annealing in vacuum under N2 flow for 1 min at temperatures between 600 and 730 °C clearly improves the interface quality. Marked crystallization and phase separation occurred at 800 °C, increasing the structural heterogeneity and defect density in the dielectric oxide layers.
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| 10. |
- Duenas, S., et al.
(författare)
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Selection of post-growth treatment parameters for atomic layer deposition of structurally disordered TiO2 thin films
- 2008
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Ingår i: Journal of Non-Crystalline Solids. - : Elsevier BV. - 0022-3093 .- 1873-4812. ; 354:2-9, s. 404-408
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Tidskriftsartikel (refereegranskat)abstract
- Routes to atomic layer-deposited TiO2 films With decreased leakage have been studied by using electrical characterization techniques. The combination of post-deposition annealing parameters, time and temperature, which provides measurable aluminum-titanium oxide-silicon structures - i.e., having capacitance-voltage curves which show accumulation behavior - are 625 degrees C, 10 min for p-type substrates, and 550 degrees C, 10 min for n-type substrates. The best annealing conditions for p-type substrates are 625 degrees C with the length extended to 30 min, which produces an interfacial state density of about 5-6 x 10(11) cm(-2) eV(-1), and disordered-induced gap state density below our experimental limits. We have also proved that a post-deposition annealing must be applied to TiO2/HfO2 and HfO2/TiO2/HfO2 stacked structures to obtain adequate measurability conditions.
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