| 1. |
- Freitas, R. R. Q., et al.
(författare)
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Energy Barrier Reduction for the Double Proton-Transfer Reaction in Guanine-Cytosine DNA Base Pair on a Gold Surface
- 2015
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Ingår i: The Journal of Physical Chemistry C. - : American Chemical Society. - 1932-7447 .- 1932-7455. ; 119:27, s. 15735-15741
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Tidskriftsartikel (refereegranskat)abstract
- We investigate, by means of first-principles calculations, the impact of a gold surface on the proton-transfer of the guanine-cytosine (GC) DNA base pair. Our calculations employ density functional improvements to correct van der Waals interactions and properly treat a weakly bound GC pair at an Au(111) surface. We adopted the simultaneous double proton-transfer (SDPT) mechanism proposed by Lowdin, which may lead to a spontaneous mutation in the structure of DNA from specific tautomerization involving the base pairs. Our calculated differences in the energetics and kinetics of the SDPT in the GC pair, when in contact with an inert gold surface, indicate a reduction of about 31% in the activation energy barrier of the GC/Au(111) tautomeric equilibrium. This finding gives strong evidence that tautomerism of DNA base pairs, binding to a noble surface, may be indeed relevant for the assessment of a possible point mutation, which could be induced by the presence of gold nanoparticles during DNA replication.
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| 2. |
- dos Santos, R. B., et al.
(författare)
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Dopant species with Al-Si and N-Si bonding in the MOCVD of AlN implementing trimethylaluminum, ammonia and silane
- 2015
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Ingår i: Journal of Physics D. - : IOP Publishing: Hybrid Open Access. - 0022-3727 .- 1361-6463. ; 48:29
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Tidskriftsartikel (refereegranskat)abstract
- We have investigated gas-phase reactions driven by silane (SiH4), which is the dopant precursor in the metalorganic chemical vapor deposition (MOCVD) of aluminum nitride (AlN) doped by silicon, with prime focus on determination of the associated energy barriers. Our theoretical strategy is based on combining density-functional methods with minimum energy path calculations. The outcome of these calculations is suggestive for kinetically plausible and chemically stable reaction species with Al-Si bonding such as (CH3)(2)AlSiH3 and N-Si bonding such as H2NSiH3. Within this theoretical perspective, we propose a view of these reaction species as relevant for the actual MOCVD of Si-doped AlN, which is otherwise known to be contributed by the reaction species (CH3)(2)AlNH2 with Al-N bonding. By reflecting on experimental evidence in the MOCVD of various doped semiconductor materials, it is anticipated that the availability of dopant species with Al-Si, and alternatively N-Si bonding near the hot deposition surface, can govern the incorporation of Si atoms, as well as other point defects, at the AlN surface.
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| 3. |
- Freitas, Rafael R. Q., et al.
(författare)
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Spin-orbit-induced gap modification in buckled honeycomb XBi and XBi3 (X = B, Al, Ga, and In) sheets
- 2015
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Ingår i: Journal of Physics. - : Institute of Physics Publishing (IOPP). - 0953-8984 .- 1361-648X. ; 27:48, s. 485306-
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Tidskriftsartikel (refereegranskat)abstract
- The band structure and stability of XBi and XBi3 (X = B, Al, Ga, and In) single sheets are predicted using first-principles calculations. It is demonstrated that the band gap values of these new classes of two-dimensional (2D) materials depend on both the spin-orbit coupling (SOC) and type of group-III elements in these hetero-sheets. Thus, topological properties can be achieved, allowing for viable applications based on coherent spin transport at room temperature. The spin-orbit effects are proved to be essential to explain the tunability by group-III atoms. A clear effect of including SOC in the calculations is lifting the spin degeneracy of the bands at the Gamma point of the Brillouin zone. The nature of the band gaps, direct or indirect, is also tuned by SOC, and by the appropriate X element involved. It is observed that, in the case of XBi single sheets, band inversions naturally occur for GaBi and InBi, which exhibit band gap values around 172 meV. This indicates that these 2D materials are potential candidates for topological insulators. On the contrary, a similar type of band inversion, as obtained for the XBi, was not observed in the XBi3 band structure. In general, the calculations, taking into account SOC, reveal that some of these buckled sheets exhibit sizable gaps, making them suitable for applications in room-temperature spintronic devices.
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| 4. |
- Freitas, Rafael R. Q., et al.
(författare)
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Topological Insulating Phases in Two-Dimensional Bismuth-Containing Single Layers Preserved by Hydrogenation
- 2015
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Ingår i: The Journal of Physical Chemistry C. - : American Chemical Society (ACS). - 1932-7447 .- 1932-7455. ; 119:41, s. 23599-23606
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Tidskriftsartikel (refereegranskat)abstract
- Two-dimensional (2D) binary XBi compounds, where X belongs to group III elements (B, Al, Ga, and In), in a buckled honeycomb structure may originate sizable gap Z2 topological insulators (TIs). These are characterized by exhibiting single band inversion at the Γ point as well as nontrivial edge states in their corresponding nanoribbons. By using first-principles calculations, we demonstrate that hydrogenation of XBi single layers leads to distinct and stable crystal structures, which can preserve their topological insulating properties. Moreover, hydrogenation opens a band gap in this new class of 2D Z2 TIs, with distinct intensities, exhibiting an interesting electronic behavior for viable room-temperature applications of these 2D materials. The nature of the global band gap (direct or indirect) and topological insulating properties depend on the X element type and spatial configuration of the sheet, as well as the applied strain. Our results indicate that the geometric configuration can be crucial for preserving totally the topological characteristics of the hydrogenated sheets. We identify sizable band inversions in the band structure for the relaxed hydrogenated GaBi and InBi in their chairlike configurations and for hydrogenated BBi and AlBi under strain. Based on these findings, hydrogenation gives rise to a flexible chemical tunability and can preserve the band topology of the pristine XBi phases.
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| 5. |
- dos Santos, Renato B, et al.
(författare)
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Effects of N doping on the electronic properties of a small carbon atomic chain with distinct sp(2) terminations: A first-principles study
- 2011
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X. ; 84:7, s. 075417-
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Tidskriftsartikel (refereegranskat)abstract
- arbon nanostructures consisting of corannulene/coronene-like pieces connected by atomic chains and doped with nitrogen atoms have been addressed by carrying out first-principles calculations within the framework of the spin-polarized density functional theory. Our results show that the conformation, charge distributions, and spin states are significantly influenced by the nitrogen incorporation in comparison to these characteristics of similar pure carbon structures. Higher concentration of incorporated nitrogen leads to a smaller highest occupied molecular orbital-lowest unoccupied molecular orbital (HOMO-LUMO) gap and different conductive states near the Fermi level. In turn the different location of the N-incorporation sites allows switching on and off of the pi-electron magnetism in these systems. We found that the rotational deformation of the terminations with respect to the carbon chain depends on the number and the location of the incorporated N atoms. The most stable N-doped structures exhibit a relative rotation of the terminations of approximately 90 degrees. These findings indicate that by controllable N doping one can tune the conducting channel of carbon chains connected to sp(2) terminations; thus obtaining low band-gap nano-units.
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| 6. |
- dos Santos, Renato B., et al.
(författare)
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Feasibility of novel (H3C)(n)X(SiH3)(3-n) compounds (X = B, Al, Ga, In): structure, stability, reactivity, and Raman characterization from ab initio calculations
- 2015
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Ingår i: Dalton Transactions. - : Royal Society of Chemistry. - 1477-9226 .- 1477-9234. ; 44:7, s. 3356-3366
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Tidskriftsartikel (refereegranskat)abstract
- We employ ab initio calculations to predict the equilibrium structure, stability, reactivity, and Raman scattering properties of sixteen different (H3C)(n)X(SiH3)(3-n) compounds (X = B, Al, Ga, In) with n = 0-3. Among this methylsilylmetal family, only the (H3C)(3)X members, i.e., trimethylboron (TMB), trimethylaluminum (TMA), trimethylgallium (TMG), and trimethylindium (TMI), are currently well-studied. The remaining twelve compounds proposed here open up a two-dimensional array of new possibilities for precursors in various deposition processes, and evoke potential applications in the chemical synthesis of other compounds. We infer that within the (H3C)(n)X(SiH3)(3-n) family, the compounds with fewer silyl groups (and consequently with more methyl groups) are less reactive and more stable. This trend is verified from the calculated cohesive energy, Gibbs free energy of formation, bond strength, and global chemical indices. Furthermore, we propose sequential reaction routes for the synthesis of (H3C)(n)X(SiH3)(3-n) by substitution of methyl by silyl groups, where the silicon source is the silane gas. The corresponding reaction barriers for these chemical transformations lie in the usual energy range typical for MOCVD processes. We also report the Raman spectra and light scattering properties of the newly proposed (H3C)(n)X(SiH3)(3-n) compounds, in comparison with available data of known members of this family. Thus, our computational experiment provides useful information for a systematic understanding of the stability/reactivity and for the identification of these compounds.
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| 7. |
- dos Santos, Renato B., et al.
(författare)
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Van der Waals stacks of few-layer h-AlN with graphene: an ab initio study of structural, interaction and electronic properties
- 2016
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Ingår i: Nanotechnology. - : IOP PUBLISHING LTD. - 0957-4484 .- 1361-6528. ; 27:14, s. 145601-
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Tidskriftsartikel (refereegranskat)abstract
- Graphite-like hexagonal AlN (h-AlN) multilayers have been experimentally manifested and theoretically modeled. The development of any functional electronics applications of h-AlN would most certainly require its integration with other layered materials, particularly graphene. Here, by employing vdW-corrected density functional theory calculations, we investigate structure, interaction energy, and electronic properties of van der Waals stacking sequences of few-layer h-AlN with graphene. We find that the presence of a template such as graphene induces enough interlayer charge separation in h-AlN, favoring a graphite-like stacking formation. We also find that the interface dipole, calculated per unit cell of the stacks, tends to increase with the number of stacked layers of h-AlN and graphene.
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| 8. |
- Freitas, Rafael RQ, et al.
(författare)
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Tuning band inversion symmetry of buckled III-Bi sheets by halogenation
- 2016
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Ingår i: Nanotechnology. - : IOP PUBLISHING LTD. - 0957-4484 .- 1361-6528. ; 27:5, s. 1-11
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Tidskriftsartikel (refereegranskat)abstract
- First-principles calculations are employed to investigate structural, electronic and topological insulating properties of XBi (X = B, Al, Ga, and In) monolayers upon halogenation. It is known that Y-XBi (X = Ga, In, Tl; Y = F, Cl, Br, I) can originate inversion-asymmetric topological insulators with large bulk band gaps. Our results suggest that Y-XBi (X = B, Al; Y = F, Cl, Br, I) may also result in nontrivial topological insulating phases. Despite the lower atomic number of B and Al, the spin-orbit coupling opens a band gap of about 400 meV in Y-XBi (X = B, Al), exhibiting an unusual electronic behavior for practical applications in spintronics. The nature of the bulk band gap and Dirac-cone edge states in their nanoribbons depends on the group-III elements and Y chemical species. They lead to a chemical tunability, giving rise to distinct band inversion symmetries and exhibiting Rashba-type spin splitting in the valence band of these systems. These findings indicate that a large family of Y-XBi sheets can exhibit nontrivial topological characteristics, by a proper tuning, and open a new possibility for viable applications at room temperature.
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| 9. |
- Mota, F. de B., et al.
(författare)
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Hybrid platforms of graphane-graphene 2D structures: prototypes for atomically precise nanoelectronics
- 2014
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Ingår i: Physical Chemistry, Chemical Physics - PCCP. - : Royal Society of Chemistry. - 1463-9076 .- 1463-9084. ; 16:43, s. 23558-23563
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Tidskriftsartikel (refereegranskat)abstract
- First-principles calculations demonstrate that line/ribbon defects, resulting from a controlled dehydrogenation in graphane, lead to the formation of low-dimensional electron-rich tracks in a monolayer. The present simulations point out that hybrid graphane-graphene nanostructures exhibit important elements, greatly required for the fabrication of efficient electronic circuits at the atomic level.
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| 10. |
- Oliveira, M. I. A., et al.
(författare)
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Optical Properties and Quasiparticle Band Gaps of Transition-Metal Atoms Encapsulated by Silicon Cages
- 2014
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Ingår i: The Journal of Physical Chemistry C. - : American Chemical Society (ACS). - 1932-7447 .- 1932-7455. ; 118:10, s. 5501-5509
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Tidskriftsartikel (refereegranskat)abstract
- Semiconductors assembled upon nanotemplates consisting of metal-encapsulating Si cage clusters (M@Si-n) have been proposed as prospective materials for nanodevices. To make an accurate and systematic prediction of the optical properties of such M@Si-n clusters, which represent a new type of metal silicon hybrid material for components in nanoelectronics, we have performed first-principles calculations of the electronic properties and quasiparticle band gaps for a variety of M@Si-12 (M Ti, Cr, Zr, Mo, Ru, Pd, Hf, and Os) and M@Si-16 (M = Ti, Zr, and Hf) clusters. At first stage, the electronic structure calculations have been performed within plane-wave density functional theory in order to predict equilibrium geometries, polarizabilities, and optical absorption spectra of these endohedral cagelike clusters. The quasiparticle calculations were performed within the GW approximation, which predict that all of these systems are semiconductors exhibiting large band gaps. The present results have demonstrated that the independent-particle absorption spectra of M@Si-n, calculated within the local density or generalized gradient approximations to density functional theory, are dramatically influenced by many-body effects. On average, the quasiparticle band gaps were significantly increased, in comparison with the independent-particle gaps, giving values in the 2.45-5.64 eV range. Consequently, the inclusion of many-body effects in the electron electron interaction, and going beyond the mean-field approximation of independent particles, might be essential to realistically describe the optical spectra of isolated M@Si-n clusters, as well as their cluster-assembled materials.
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