| 1. |
- Ferrari, A. C., et al.
(författare)
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Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
- 2015
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Ingår i: Nanoscale. - : Royal Society of Chemistry (RSC). - 2040-3372 .- 2040-3364. ; 7:11, s. 4598-4810
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Tidskriftsartikel (refereegranskat)abstract
- We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.
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| 2. |
- Rashid, S. J., et al.
(författare)
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Modelling of single-crystal diamond Schottky diodes for high-voltage applications
- 2006
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Ingår i: Diamond and related materials. - : Elsevier BV. - 0925-9635 .- 1879-0062. ; 15, s. 317-323
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Tidskriftsartikel (refereegranskat)abstract
- The modelling of Schottky m-i-p(+) (SMIP) diodes fabricated on chemical vapour deposited (CVD) single crystal (SC) diamond intrinsic layers grown on highly boron doped CVD diamond Substrates is reported. Variations in intrinsic layer thickness, Schottky metal type and operating temperature have been included in the analysis. Numerical models that take into account the activation of dopants, concentration and temperature dependant mobility and avalanche coefficients have been derived to successfully simulate experimental diamond devices.
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| 3. |
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| 4. |
- Rashid, S. J., et al.
(författare)
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Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis
- 2008
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Ingår i: IEEE Transactions on Electron Devices. - 0018-9383 .- 1557-9646. ; 55:10, s. 2744-2756
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Tidskriftsartikel (refereegranskat)abstract
- High-quality electronic-grade intrinsic chemical-vapor-deposited (CVD) single-crystal diamond layers having exceptionally high carrier mobilities have been reported by Isberg et al. This makes the realization of novel electronic devices in diamond, particularly for high-voltage and high-temperature applications, a viable proposition. As such, material models which can capture the particular features of diamond as a semiconductor are required to analyze, optimize, and quantitatively design new devices. For example, the incomplete ionization of boron in diamond and the transition to metallic conduction in heavily boron-doped layers require accurate carrier freeze-out models to be included in the simulation of diamond devices. Models describing these phenomena are proposed in this paper and include numerical approximation of intrinsic diamond which is necessary to formulate doping- and temperature-dependent mobility models. They enable a concise numerical description of single-crystal diamond which agrees with data obtained from material characterization. The models are verified by application to new Schottky m-i-p(+) diode structures in diamond. Simulated forward characteristics show excellent correlation with experimental measurements. In spite of the lack of impact ionization data for single-crystal diamond, approximation of avalanche coefficient parameters from other wide-bandgap semiconductors has also enabled the reverse blocking characteristics of diamond diodes to be simulated. Acceptable agreement with breakdown voltage from experimental devices made with presently available single-crystal CVD diamond is obtained.
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| 5. |
- Teo, K. B. K., et al.
(författare)
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Wafer-scale graphene synthesis, transfer and FETs
- 2013
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Ingår i: Proceedings of the IEEE Conference on Nanotechnology. - 1944-9399 .- 1944-9380. - 9781479906758 ; , s. 1200-1203
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Konferensbidrag (refereegranskat)abstract
- Growth and characterization of graphene grown using copper foils as well as copper films on silicon dioxide on silicon substrates were performed. Kinetics of growth and effective activation energy for the graphene synthesis will be discussed for the surface catalytic synthesis of graphene. Conditions for large-scale synthesis of monolayer graphene will be addressed in this talk. Wafer-scale graphene transfer and electrical results will be presented. Based on our preliminary results from capped 100mm wafer scale graphene transistors, we expect a mobility of 4-6 k cm2/Vs with symmetry hole/electron transport. Key considerations and challenges for scaling are discussed and results for graphene growth on the 300mm wafer scale will be discussed.
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