| 1. |
- Bhaskar, U., et al.
(författare)
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On-chip tensile testing of the mechanical and electro-mechanical properties of nano-scale silicon free-standing beams
- 2011
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Ingår i: Advanced Materials Research. - 1662-8985 .- 1022-6680. ; 276, s. 117-126
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Tidskriftsartikel (refereegranskat)abstract
- A simple and versatile on-chip tensile testing method is proposed for the statistical evaluation of size effects on the mechanical strength of silicon thin films along with the simultaneous study of (from low to ultra) strain effects on the carrier transport. Mechanical results are presented on the fracture strength of micro-nano scale silicon beams, followed with a discussion on interface states and problems facing reliable nano-electronic and nano-electromechanical characterizations
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| 2. |
- Mathieu, R., Sørensen, B.S., Sadowski, J., Södervall, U., Kanski, J., Svedlindh, P., Lindelof, P.E., Hrabovsky, D. and Vanelle, E.
(författare)
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Magnetization of ultrathin (Ga,Mn)As layers
- 2003
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Ingår i: Phys. Rev. B 68, 184421 (2003)..
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Tidskriftsartikel (refereegranskat)
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| 3. |
- Paskova, Tanja, 1961-, et al.
(författare)
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Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy
- 2004
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 273:1-2, s. 118-128
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Tidskriftsartikel (refereegranskat)abstract
- A comprehensive study of the morphological, optical and microstructural properties of mass-transport (MT) and conventionally grown GaN by hydride vapour-phase epitaxy is presented. Spatially resolved techniques have been utilized to reveal in a comparative way, the characteristics of the material grown either in predominant vertical or lateral growth modes. A strong donor-acceptor pair (DAP) emission is observed from the MT regions with a distinctive intensity contrast between the exciton and DAP emission bands from MT and nontransport regions. Secondary ion mass spectroscopy and imaging were employed to investigate the impurity incorporation into different regions. An increase of residual oxygen and aluminium impurity concentrations was found in the MT areas. In addition, positron annihilation spectroscopy showed a strong signal of Ga vacancy clusters in the MT grown material. The increase of the point defect concentrations of both Ga vacancy and oxygen impurity, most likely forming defect complexes, is related to the enhancement of the DAP emission.
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| 4. |
- Passi, V., et al.
(författare)
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High-Throughput On-Chip Large Deformation of Silicon Nanoribbons and Nanowires
- 2012
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Ingår i: Journal of Microelectromechanical Systems. - 1057-7157. ; 21:4, s. 822-829
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Tidskriftsartikel (refereegranskat)abstract
- An on-chip internal stress-based testing device has been developed in order to deform silicon nanoribbons and nanowires up to large strains enabling high throughput of data. The fracture strain and survival probability distribution have been generated for 50-nm-thick and 50- or 500-nm-wide specimens with lengths varying between 2.5 and 10 mu m. Fracture strains reaching up to 5% are attained in the smallest specimens, whereas 90% of the specimens survive 2.5% deformation. This testing platform opens an avenue to investigate and use electromechanical couplings appearing under large mechanical stress or large deformation.
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| 5. |
- Passi, V., et al.
(författare)
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Note: Fast and reliable fracture strain extraction technique applied to silicon at nanometer scale
- 2011
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Ingår i: Review of Scientific Instruments. - : AIP Publishing. - 1089-7623 .- 0034-6748. ; 82:11, s. art. no 116106-
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Tidskriftsartikel (refereegranskat)abstract
- Simple fabrication process and extraction procedure to determine the fracture strain of monocrystalline silicon are demonstrated. Nanowires/nanoribbons in silicon are fabricated and subjected to uniaxial tensile stress along the complete length of the beams. Large strains up to 5% are measured for nanowires presenting a cross section of 50 nm × 50 nm and a length of 2.5 μm. An increase in fracture strain for silicon nanowires (NWs) with the downscaling of their volume is observed, highlighting the reduction of the defects probability as volume is decreased.
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| 6. |
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