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Sökning: WFRF:(SHUH DK)

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1.
  • Butorin, SM, et al. (författare)
  • Resonant inelastic soft-X-ray scattering at the 4d edge of Ce-based heavy-fermion materials
  • 1999
  • Ingår i: JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA. - 0368-2048. ; 103, s. 783-786
  • Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
    • Resonant X-ray scattering measurements were performed on CeB6, CeAl, gamma-Ce, and alpha-Ce at various incident-photon energies near the Ce 4d threshold. A pronounced inelastic scattering structure which has 4f character is observed at about 4 eV below th
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2.
  • Butorin, SM, et al. (författare)
  • Resonant X-ray fluorescence spectroscopy of correlated systems: A probe of charge-transfer excitations
  • 1996
  • Ingår i: PHYSICAL REVIEW LETTERS. - : AMER INST PHYSICS. - 0031-9007. ; 77:3, s. 574-577
  • Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
    • X-ray fluorescence spectroscopy with monochromatic photon excitation is presented as a tool for studies of charge-transfer excitations in correlated systems, using CeO2 and UO3 as examples. Ce 4f --> 3d and U 5f --> 3d x-ray fluorescence, with excitation
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3.
  • CHAKARIAN, V, et al. (författare)
  • THE ADSORPTION OF I2 ON SI(111)-7X7 STUDIED BY SOFT-X-RAY PHOTOEMISSION
  • 1993
  • Ingår i: Surface Science. - 0039-6028 .- 1879-2758. ; 296:3, s. 383-392
  • Tidskriftsartikel (refereegranskat)abstract
    • The adsorption Of I2 on Si(111)-7 x 7 at room temperature is studied with soft X-ray photoelectron spectroscopy. I2 adsorbs dissociatively, forming a mixture of SiI, SiI2 and SiI3 moieties, of which SiI dominates. The Fermi level is pinned near mid-gap, moving slightly towards the conduction band as the I coverage increases. The surface work function increases monotonically with I coverage. The I 4d core-level displays a single chemical state, which decreases in binding energy with increasing coverage. Analysis of the Si 2p core-level spectra shows that the adsorption proceeds first by attachment of I to the dangling bonds of the 7 x 7 unit cell and that, at saturation, 1.57 +/- 0.05 ML of I atoms are adsorbed in 1.10 +/- 0.02 ML of SiI(x) groups. These results indicate that substrate Si-Si bonds are broken by reaction with I2. The total I coverage is limited, however, by the availability Of surface dangling bonds that are required to initiate the dissociation Of I2 molecules.
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  • Resultat 1-5 av 5

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