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  • Coletti, C., et al. (författare)
  • Surface studies of hydrogen etched 3C-SiC(001) on Si(001)
  • 2007
  • Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 91:6, s. 061914-
  • Tidskriftsartikel (refereegranskat)abstract
    • Themorphology and structure of 3C-SiC(001) surfaces, grown on Si(001) andprepared via hydrogen etching, are studied using atomic force microscopy(AFM), low-energy electron diffraction (LEED), and Auger electron spectroscopy (AES).On the etched samples, flat surfaces with large terraces andatomic steps are revealed by AFM. In ultrahigh vacuum asharp LEED pattern with an approximate (5×1) periodicity is observed. AES studies reveal a “bulklike” composition up to the nearsurface region and indicate that an overlayer consisting of aweakly bound silicon oxide monolayer is present.
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3.
  • Lloyd-Spets, Anita, 1951-, et al. (författare)
  • Thermal detection mechanism of SiC based hydrogen resistive gas sensors
  • 2006
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 89:18
  • Tidskriftsartikel (refereegranskat)abstract
    • Silicon carbide (SiC) resistive hydrogen gas sensors have been fabricated and tested. Planar NiCr contacts were deposited on a thin 3C-SiC epitaxial film grown on thin Si wafers bonded to polycrystalline SiC substrates. At 673 K, up to a 51.75±0.04% change in sensor output current and a change in the device temperature of up to 163.1±0.4 K were demonstrated in response to 100% H2 in N2. Changes in device temperature are shown to be driven by the transfer of heat from the device to the gas, giving rise to a thermal detection mechanism. © 2006 American Institute of Physics.
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