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| 2. |
- Edoff, Marika, 1965-, et al.
(författare)
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Ultrathin CIGS Solar Cells with Passivated and Highly Reflective Back Contacts – : Results from the ARCIGS-M Consortium
- 2019
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Ingår i: Proceedings of 36th European Photovoltaic Solar Energy Conference and Exhibition. ; , s. 597-600
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- In this work, we report results from the EU-funded project ARCIGS-M. The project started in 2016 and aims to reduce the use of indium and gallium by enabling the use of very thin Cu(In,Ga)Se2 (CIGS) layers while retaining high efficiency and developing innovative low-cost steel substrates as alternatives to glass. In the project, reflective layers containing TCO´s and silver have successfully been used to enhance the reflective properties of the rear contact. In addition, passivation layers based on alumina (Al2O3) deposited by atomic layer deposition (ALD) have been found to yield good passivation of the rear contact. Since the alumina layers are dielectric, perforation of these layers is necessary to provide adequate contacting. The design of the perforation patterns has been investigated by a combination of modeling and experimental verification by electron beam lithography. In parallel a nano-imprint lithography (NIL) process is further developed for scale-up and application in prototype modules. Advanced optoelectrical characterization supported by modeling is used to fill in the missing gaps in optical and electrical properties, regarding CIGS, interfaces and back contact materials.
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| 3. |
- Douheret, Oliver, et al.
(författare)
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Characterization of quantum wells by cross-sectional Kelvin probe force microscopy
- 2004
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 85:22, s. 5245-5247
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Tidskriftsartikel (refereegranskat)abstract
- Cross-sectional Kelvin probe force microscopy (KPFM) in ultrahigh vacuum is used to characterize the electronic structure of InGaAs/InP quantum wells. The KPFM signal shows clear peaks at the position of the quantum wells and exhibits a systematic trend for different wells. It is demonstrated that KPFM is capable of detecting quantum wells as narrow as 5 nm. Evidence for carrier accumulation in the quantum wells is observed. A complete quantitative analysis of the quantum well properties is shown to be impeded by tip averaging effects and due to surface/interface states.
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| 4. |
- Leitao, J. P., et al.
(författare)
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Influence of CdS and ZnxSn1-xOy Buffer Layers on the Photoluminescence of Cu(In,Ga)Se2 Thin Films
- 2016
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Ingår i: 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). - New York : IEEE. - 9781509027248 ; , s. 3068-3071
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Konferensbidrag (refereegranskat)abstract
- In this work, an optical study by photoluminescence on the influence of different buffer layers on a Cu(In, Ga)Se2 (CIGS) thin film is presented. Chemical bath deposited CdS was compared with atomic layer deposited ZnxSn1xOy (ZnSnO). The CIGS bulk and CIGS/buffer interface in both samples are strongly influenced by fluctuating potentials, being less pronounced for the sample with the ZnSnO buffer layer. This study emphasizes the potential application of the ZnSnO semiconductor in CIGS based solar cells.
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| 5. |
- Salome, P. M. P., et al.
(författare)
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CdS and Zn1-xSnxOy buffer layers for CIGS solar cells
- 2017
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Ingår i: Solar Energy Materials and Solar Cells. - : Elsevier BV. - 0927-0248 .- 1879-3398. ; 159, s. 272-281
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Tidskriftsartikel (refereegranskat)abstract
- Thin film solar cells based on Cu(In,Ga)Se-2 (CIGS), where just the buffer layer is changed, were fabricated and studied. The effects of two different buffer layers, CdS and Zn1-xSnxOy (ZnSnO), are compared using several characterization techniques. We compared both devices and observe that the ZnSnO-based solar cells have similar values of power conversion efficiency as compared to the cells with CdS buffer layers. The ZnSnO-based devices have higher values in the short-circuit current (6) that compensate for lower values in fill factor (FF) and open circuit voltage (V-oc) than CdS based devices. Kelvin probe force microscopy (KPFM) results indicate that CdS provides junctions with slightly higher surface photovoltage (SPV) than ZnSnO, thus explaining the lower Voc potential for the ZnSnO sample. The TEM analysis shows a poly-crystalline ZnSnO layer and we have not detected any strong evidence of diffusion of Zn or Sn into the CIGS. From the photoluminescence measurements, we concluded that both samples are being affected by fluctuating potentials, although this effect is higher for the CdS sample.
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