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Träfflista för sökning "WFRF:(Sagnes I.) "

Sökning: WFRF:(Sagnes I.)

  • Resultat 1-7 av 7
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1.
  • de Rossi, S., et al. (författare)
  • Longitudinal mode selection in constricted photonic crystal guides and electrically injected lasers
  • 2005
  • Ingår i: Journal of Lightwave Technology. - : Institute of Electrical and Electronics Engineers (IEEE). - 0733-8724 .- 1558-2213. ; 23:3, s. 1363-1368
  • Tidskriftsartikel (refereegranskat)abstract
    • Locally reducing the width of a wide photonic crystal (PhC) waveguide generates a constriction which acts as an internal reflector. We have simulated and measured the spectral behavior of a wide PhC waveguide locally constricted to a narrower PhC waveguide and ended by two cleaved facets, thus generating two coupled cavities. Passive structures as well as electrically injected active structures have been investigated. The multimode behavior of wide PhC waveguides is evidenced to play a deciding role. Modal reflection and transmission at the constriction are simulated and measured on passive PhC waveguides, when varying the constrictions' hole size and length. The spectral behavior of full-PhC electrically pumped lasers including such a constriction is measured and analyzed according to the constriction geometry. Design rules are finally proposed to take advantage of this coupled-cavities behavior for high rejection and high external efficiency monomode laser operation.
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2.
  • Rapp, S., et al. (författare)
  • Near room-temperature continuous-wave operation of electrically pumped 1.55 ÎŒm vertical cavity lasers with InGaAsP/InP bottom mirror
  • 1999
  • Ingår i: Electronics Letters. - 0013-5194 .- 1350-911X. ; 35:1, s. 49-50
  • Tidskriftsartikel (refereegranskat)abstract
    • The first near room-temperature continuous-wave (CW) operation of a vertical cavity laser based on an epitaxial InGaAsP/InP bottom mirror is reported. The structure employs a package of nine strain compensated GaInAsP quantum wells and a wafer-fused GaAs/AlGaAs top mirror. For a 10 ÎŒm diameter device, the threshold current is 6mA and the input threshold power is 21mW. The maximum operating temperature is 17 and 101°C for CW and pulsed conditions, respectively. © IEE 1999.
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3.
  • Salomonsson, P., et al. (författare)
  • Temperature-dependent performance of 1.55 ÎŒm vertical-cavity lasers with InGaAsP/InP bottom mirror
  • 1999
  • Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - Davos, Switz. ; :Piscataway, NJ, United States, s. 223-226
  • Tidskriftsartikel (refereegranskat)abstract
    • We have fabricated and evaluated a long-wavelength vertical-cavity laser (VCL) based on an epitaxially integrated InP distributed Bragg reflector (DBR) under continuous wave (CW) and pulsed conditions. We conclude that, for an InP-DBR-down configuration, the high-temperature performance is limited by the heat conductivity of the bottom mirror. The highest operating temperature for CW and pulsed condition is 17 °C and 101 °C respectively, indicating a substantial self-heating for CW. To investigate the prospect for improved performance in other mounting configurations, we have applied a two-dimensional finite element analysis to the heat transfer problem. It is suggested that for top-side-down mounting with the AlGaAs/GaAs DBR closest to the heat sink, a performance comparable to that of so called double-fused VCLs could be possible.
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4.
  • Strassner, Martin, et al. (författare)
  • 1.55 mu m VCSELs with InP/air-gap distributed bragg reflectors
  • 2004
  • Ingår i: 2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings. - 0780385950 ; , s. 700-703
  • Konferensbidrag (refereegranskat)abstract
    • The presented VCSELs demonstrate the possibility of fabricating cavities with extremely large Q-factors by using InP/air-gap DBRs. At the same time, the deployed technologies permits to fabricate potentially tunable VCSELs. Photo-pumped and electrically pumped VCSELs and their tunability when working as resonant cavity light emitting diodes are presented. Output powers of up to I 10 mu W at room temperature and a maximum wavelength tuning of 22 nm have been achieved.
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5.
  • Streubel, K., et al. (författare)
  • Novel technologies for 1.55-mu m vertical cavity lasers
  • 2000
  • Ingår i: Optical Engineering. - : SPIE-Intl Soc Optical Eng. - 0091-3286 .- 1560-2303. ; 39:2, s. 488-497
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on three novel vertical-cavity laser (VCL) structures for 1.55-mu m operation. Two of the structures utilize an n-type GalnAsP/InP Bragg mirror combined with an Al(Ga)As/GaAs mirror using either wafer fusion or metamorphic epitaxial growth. The third employs two wafer-fused AlGaAs/GaAs mirrors, in which lateral current confinement is obtained by localized fusion of the p mirror. Ali three VCLs use strained GalnAsP quantum welts as active material and achieve continuous-wave (cw) operation at room temperature or above. The single fused VCL operates up to 17 and 101 degrees C in continuous-wave and pulsed mode, respectively. The monolithic VCL-structure with a metamorphic GaAs/AlAs n-type mirror uses a reverse-biased tunnel junction for current injection. This laser achieves record high output power (1 mW) at room temperature and operates cw up to 45 degrees C. The double fused VCLs with a 10x10-mu m(2) active area operate cw up to 30 degrees C with threshold current as low as 2.5 mA and series resistance of 30 Omega. The emission spectra exhibit a single lasing mode polarized with 30-dB extinction ratio and a spectral linewidth of 150 MHz.
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6.
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7.
  • Symonds, C., et al. (författare)
  • Room temperature CW lasing operation of monolithically grown 1.55 mu m vertical external cavity surface emitting laser
  • 2004
  • Ingår i: Optics Communications. - : Elsevier BV. - 0030-4018 .- 1873-0310. ; 230:4-6, s. 419-423
  • Tidskriftsartikel (refereegranskat)abstract
    • We report room temperature (20 degreesC) continuous-wave operation of 1.55 mum vertical-external-cavity surface-emitting lasers. The optically pumped monolithic InP-based structure, grown by metal-organic chemical vapor deposition, includes a InP/InGaAsP Bragg reflector, and an active region with strain compensated quantum wells. Output power up to 4 mW is obtained at 0 degreesC. The thermal impedance of the structure is deduced from the experimental data.
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  • Resultat 1-7 av 7

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