1. |
- Achenbach, Jan-Ole, et al.
(författare)
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Synthesis and Properties of Orthorhombic MoAlB Coatings
- 2019
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Ingår i: Coatings. - : MDPI. - 2079-6412. ; 9:8
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Tidskriftsartikel (refereegranskat)abstract
- MoAlB is a potential candidate for high-temperature application since a dense, adherent alumina scale is formed. While, based on X-ray diffraction investigations, the formation of phase pure orthorhombic MoAlB coatings is observed, energy dispersive X-ray spectroscopy carried out in a scanning transmission electron microscope reveals the presence of Al-rich and O-rich regions within the MoAlB matrix. The oxidation kinetics of coatings and bulk is similar to the scale thickness formed on the MoAlB coating after oxidation at 1200 degrees C for 30 min is similar to the one extrapolated for bulk MoAlB. Furthermore, the oxidation kinetics of MoAlB coatings is significantly lower than the one reported for bulk Ti2AlC. Finally, the elastic properties measured for the as-deposited coatings are consistent ab initio predictions.
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2. |
- Sahu, Rajib, et al.
(författare)
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Compositional defects in a MoAlB MAB phase thin film grown by high-power pulsed magnetron sputtering
- 2023
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Ingår i: Nanoscale. - : Royal Society of Chemistry. - 2040-3364 .- 2040-3372. ; 15:43, s. 17356-17363
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Tidskriftsartikel (refereegranskat)abstract
- Various compositional defects such as Mo3Al2B4, Mo4Al3B4, Mo6Al5B6 and Al3Mo, together with MoB MBene, are observed to be coexisting in a MoAlB MAB phase thin film grown at 800 °C by high-power pulsed magnetron sputtering. An overall film composition of Mo0.29Al0.33B0.38 is measured by time-of-flight elastic recoil detection analysis. The concurrent formation of these compositional defects in the MoAlB matrix occurs during the synthesis without using any chemical reagent, and their coexistence with the MAB phase is thermodynamically possible, as elucidated by density functional theory simulations. These defect phases are imaged at the atomic scale by aberration-corrected scanning transmission electron microscopy. A rough estimation of defect populations of 0.073, 0.037, 0.042 and 0.039 nm−1 for Mo3Al2B4, Mo4Al3B4, Mo6Al5B6 and Al3Mo compositional defects, respectively, is performed within the MoAlB matrix. The calculated energies of formation reveal that the Mo4Al3B4 and Mo6Al5B6 defect phases form spontaneously in the MoAlB host matrix, while the energy barrier towards the formation of the metastable Mo3Al2B4 phase is approx. 20 meV per atom. The small magnitude of this barrier is easily overcome during vapor phase condensation, and the surface diffusion of adatoms during deposition leads to local compositional variations and the coexistence of the defect phases in the host matrix. Additionally, at grain boundaries, the presence of MoB MBene is observed, with an interlayer spacing between two Mo2B2 units increasing up to ∼50% compared to the pristine MoAlB phase.
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3. |
- Sahu, Rajib, et al.
(författare)
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Direct MoB MBene domain formation in magnetron sputtered MoAlB thin films
- 2021
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Ingår i: Nanoscale. - : Royal Society of Chemistry. - 2040-3364 .- 2040-3372. ; 13:43, s. 18077-18083
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Tidskriftsartikel (refereegranskat)abstract
- Two-dimensional (2D) inorganic transition metal boride nanosheets are emerging as promising post-graphene materials in energy research due to their unique properties. State-of-the-art processing strategies are based on chemical etching of bulk material synthesized via solid-state reaction at temperatures above 1000 degrees C. Here, we report the direct formation of MoB MBene domains in a MoAlB thin film by Al deintercalation from MoAlB in the vicinity of AlOx regions. Hence, based on these results a straightforward processing pathway for the direct formation of MoB MBene-AlOx heterostructures without employing chemical etching is proposed here.
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4. |
- Stelzer, Bastian, et al.
(författare)
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Remote Tracking of Phase Changes in Cr2AlC Thin Films by In-situ Resistivity Measurements
- 2019
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Ingår i: Scientific Reports. - : NATURE PUBLISHING GROUP. - 2045-2322. ; 9
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Tidskriftsartikel (refereegranskat)abstract
- Resistivity changes of magnetron sputtered, amorphous Cr2AlC thin films were measured during heating in vacuum. Based on correlative X-ray diffraction, in-situ and ex-situ selected area electron diffraction measurements and differential scanning calorimetry data from literature it is evident that the resistivity changes at 552 +/- 4 and 585 +/- 13 degrees C indicate the phase transitions from amorphous to a hexagonal disordered solid solution structure and from the latter to MAX phase, respectively. We have shown that phase changes in Cr2AlC thin films can be revealed by in-situ measurements of thermally induced resistivity changes.
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