| 1. |
- Calamba, Katherine, et al.
(författare)
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Effect of nitrogen vacancies on the growth, dislocation structure, and decomposition of single crystal epitaxial (Ti1-xAlx)N-y thin films
- 2021
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Ingår i: Acta Materialia. - : Elsevier. - 1359-6454 .- 1873-2453. ; 203
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Tidskriftsartikel (refereegranskat)abstract
- The effect of varying nitrogen vacancies on the growth, microstructure, spinodal decomposition and hardness values of predominantly single crystal cubic phase c-(Ti1-xAlx)N-y films was investigated. Epitaxial c-(Ti1-xAlx)N-y films with y = 0.67, 0.79, and 0.92 were grown on MgO(001) and MgO(111) substrates by magnetron sputter deposition. High N vacancy c-(Ti1-xAlx)N-0.67 films deposited on MgO(111) contained coherently oriented w-(0001) structures while segregated conical structures were observed on the films grown on MgO(001). High resolution STEM images revealed that the N-deficient growth conditions induced segregation with small compositional fluctuations that increase with the number of N vacancies. Similarly, strain map analysis of the epitaxial c-(Ti1-xAlx)N-y (001) and (111) films show fluctuations in strain concentration that scales with the number of N vacancies and increases during annealing. The spinodal decomposition coarsening rate of the epitaxial c-(Ti1-xAlx)N-y films was observed to increase with decreasing N vacancies. Nanoindentation showed decreasing trends in hardness of the as-deposited films as the N vacancies increase. Isothermal post-anneal at 1100 degrees C in vacuum for 120 min revealed a continuation in the increase in hardness for the film with the largest number of N vacancies (y = 0.67) while the hardness decreased for the films with y = 0.79 and 0.92. These results suggest that nitrogen-deficient depositions of c-(Ti1-xAlx)N-y films help to promote a self-organized phase segregation, while higher N vacancies generally increase the coherency strain which delays the coarsening process and can influence the hardness at high temperatures.
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| 2. |
- Salamania, Janella, 1992-
(författare)
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Defects in Titanium Aluminum Nitride-Based Thin Films
- 2023
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Coatings and thin films inherently contain several types of defects. This thesis aims to enhance the understanding of the relationship of defects on the growth, structure, stability, and properties of titanium aluminum nitride films synthesized by physical vapor deposition techniques.Heteroepitaxial cubic and wurtzite films in the Ti-Al-N system grown by reactive magnetron sputtering were studied in relation to their defect structures. The dislocation structures of heteroepitaxial TiN and Ti1-xAlxNy films were analyzed by high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM). Together with atomistic simulations, it was revealed that the presence of different dislocation types in TiN enhances the metal-metal bonds which locally weakens the directionally covalent metal-N bonds. In epitaxial cubic Ti1-xAlxN films, microstrain analysis shows that increasing N-vacancies influences the strain and compositional fluctuations in as-deposited states. During spinodal decomposition induced by annealing to high temperatures, the delay in coarsening and strain correlates with the amount of N vacancies. Detailed characterization of the decomposing domains exposed the formation of stacking faults and partial dislocations as a strain-relieving mechanism which also facilitates the known cubic-to-wurtzite transformation in Ti-Al-N.Cathodic arc deposited Ti1-xAlxN films were grown by applying a low duty cycle pulsed-substrate bias and high nitrogen pressures. This resulted into films with coarse grains and low lattice defects within them, indicating a kinetically controlled route to modify the defect structures in arc-deposited films. Applying the same technique on single crystalline TiN seed layer films kinetically stabilizes a pseudomorphic growth, allowing to form a highly textured, pseudo epitaxial wurtzite Ti1-xAlxN films by arc deposition. In combination with theoretical calculations, it was revealed that w-Ti1-xAlxN films also exhibit a miscibility gap which enables spinodal decomposition and thus age hardening when annealed. Finally, magnetron sputtered nitrogen-deficient w-Ti1-xAlxNy heteroepitaxial films were shown to exhibit a decomposition route that involves the formation of coherent intermediate MAX-like phases before transforming to pure c-TiN and w-AlN phases, which results to continued age hardening up to 1200°C.The findings in this work increase the fundamental understanding of the role of defects in Ti-Al-N films and open new routes for defect-based engineering strategies.
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| 3. |
- Salamania, Janella, 1992-, et al.
(författare)
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Elucidating dislocation core structures in titanium nitride through high-resolution imaging and atomistic simulations
- 2022
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Ingår i: Materials & design. - : Elsevier. - 0264-1275 .- 1873-4197. ; 224
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Tidskriftsartikel (refereegranskat)abstract
- Although titanium nitride (TiN) is among the most extensively studied and thoroughly characterizedthin-film ceramic materials, detailed knowledge of relevant dislocation core structures is lacking. Byhigh-resolution scanning transmission electron microscopy (STEM) of epitaxial single crystal (001)-oriented TiN films, we identify different dislocation types and their core structures. These include, besidesthe expected primary a/2{110}h110i dislocation, Shockley partial dislocations a/6{111}h112i and sessileLomer edge dislocations a/2{100}h011i. Density-functional theory and classical interatomic potentialsimulations complement STEM observations by recovering the atomic structure of the different disloca-tion types, estimating Peierls stresses, and providing insights on the chemical bonding nature at the core.The generated models of the dislocation cores suggest locally enhanced metal–metal bonding, weakenedTi-N bonds, and N vacancy-pinning that effectively reduces the mobilities of {110}h110i and {111}h112idislocations. Our findings underscore that the presence of different dislocation types and their effects onchemical bonding should be considered in the design and interpretations of nanoscale and macroscopicproperties of TiN.
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| 4. |
- Salamania, Janella, 1992-, et al.
(författare)
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High-resolution STEM investigation of the role of dislocations during decomposition of Ti1-xAlxNy
- 2023
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Ingår i: Scripta Materialia. - : Elsevier. - 1359-6462 .- 1872-8456. ; 229
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Tidskriftsartikel (refereegranskat)abstract
- The defect structures forming during high-temperature decomposition of Ti1-xAlxNy films were investigated through high-resolution scanning transmission electron microscopy. After annealing to 950 °C, misfit edge dislocations a/6〈112〉{111} partial dislocations permeate the interface between TiN-rich and AlN-rich domains to accommodate lattice misfits during spinodal decomposition. The stacking fault energy associated with the partial dislocations decreases with increasing Al content, which facilitates the coherent cubic to wurtzite structure transition of AlN-rich domains. The wurtzite AlN-rich structure is recovered when every third cubic {111} plane is shifted by along the [211] direction. After annealing to 1100 °C, a temperature where coarsening dominates the microstructure evolution, we observe intersections of stacking faults, which form sessile locks at the interface of the TiN- and AlN-rich domains. These observed defect structures facilitate the formation of semicoherent interfaces and contribute to hardening in Ti1-xAlxNy.
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