| 1. |
- Kaiser, M., et al.
(författare)
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VEDLIoT: Very Efficient Deep Learning in IoT
- 2022
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Ingår i: Proceedings of the 2022 Design, Automation and Test in Europe Conference and Exhibition, DATE 2022. - : IEEE. - 9783981926361
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Konferensbidrag (refereegranskat)abstract
- The VEDLIoT project targets the development of energy-efficient Deep Learning for distributed AIoT applications. A holistic approach is used to optimize algorithms while also dealing with safety and security challenges. The approach is based on a modular and scalable cognitive IoT hardware platform. Using modular microserver technology enables the user to configure the hardware to satisfy a wide range of applications. VEDLIoT offers a complete design flow for Next-Generation IoT devices required for collaboratively solving complex Deep Learning applications across distributed systems. The methods are tested on various use-cases ranging from Smart Home to Automotive and Industrial IoT appliances. VEDLIoT is an H2020 EU project which started in November 2020. It is currently in an intermediate stage with the first results available.
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| 2. |
- Salomonsson, F., et al.
(författare)
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Wafer fused p-InP/p-GaAs heterojunctions
- 1998
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Ingår i: Journal of Applied Physics. - 0021-8979 .- 1089-7550. ; 83:2, s. 768-774
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Tidskriftsartikel (refereegranskat)abstract
- This article reports on the fabrication and characterization of wafer fused heterojunctions between p-InP and p-GaAs. Secondary ion mass spectroscopy was used to characterize doping profiles across the interface as well as the interface contamination with oxygen or carbon. The crystalline quality of the fused material was characterized using cross section and plan-view transmission electron microscopy. The electrical properties of the fused interface were studied as a function of various doping elements such as Be and Zn in InP or Zn and C in GaAs as well as for different acceptor concentrations in GaAs. Finally, the electrical characteristics were analyzed using a numerical model that includes thermionic emission and tunneling across the heterobarrier. © 1998 American Institute of Physics.
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| 3. |
- Streubel, K., et al.
(författare)
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Long wavelength vertical cavity lasers
- 1999
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - San Jose, CA, USA. ; 3625:Bellingham, WA, United States, s. 304-314
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Tidskriftsartikel (refereegranskat)abstract
- We report on three novel vertical cavity laser (VCL) structures for 1.55 Όm operation. Two of the VCL structures utilize an n-type GaInAsP/InP Bragg mirror combined with an Al(Ga)As/GaAs mirror using either wafer-fusion or metamorphic epitaxial growth. The third VCL employs two wafer fused AlGaAs/GaAs mirrors, in which lateral current confinement is obtained by localized fusion of the p-mirror. All three VCLs use strained GaInAsP quantum wells as active material and achieve continuous-wave (CW) operation at room-temperature or above. The single fused VCL operates up to 17 °C and 101 °C in continuous-wave and pulsed mode, respectively. The monolithic VCL-structure with a metamorphic GaAs/AlAs n-type mirror uses a reversed biased tunnel junction for current injection. This laser achieves record high output power (1mW) at room temperature and operates CW up to 45 °C. The double fused VCLs with a 10×10 Όm2 active area operate CW up to 30 °C with threshold current as low as 2.5 mA and series resistance of 30 Ohms. The emission spectra exhibit a single lasing mode polarized with 30 dB extinction ratio and a spectral linewidth of 150 MHz.
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| 4. |
- Streubel, K., et al.
(författare)
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Novel technologies for 1.55-mu m vertical cavity lasers
- 2000
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Ingår i: Optical Engineering. - : SPIE-Intl Soc Optical Eng. - 0091-3286 .- 1560-2303. ; 39:2, s. 488-497
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Tidskriftsartikel (refereegranskat)abstract
- We report on three novel vertical-cavity laser (VCL) structures for 1.55-mu m operation. Two of the structures utilize an n-type GalnAsP/InP Bragg mirror combined with an Al(Ga)As/GaAs mirror using either wafer fusion or metamorphic epitaxial growth. The third employs two wafer-fused AlGaAs/GaAs mirrors, in which lateral current confinement is obtained by localized fusion of the p mirror. Ali three VCLs use strained GalnAsP quantum welts as active material and achieve continuous-wave (cw) operation at room temperature or above. The single fused VCL operates up to 17 and 101 degrees C in continuous-wave and pulsed mode, respectively. The monolithic VCL-structure with a metamorphic GaAs/AlAs n-type mirror uses a reverse-biased tunnel junction for current injection. This laser achieves record high output power (1 mW) at room temperature and operates cw up to 45 degrees C. The double fused VCLs with a 10x10-mu m(2) active area operate cw up to 30 degrees C with threshold current as low as 2.5 mA and series resistance of 30 Omega. The emission spectra exhibit a single lasing mode polarized with 30-dB extinction ratio and a spectral linewidth of 150 MHz.
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