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Sökning: WFRF:(Sanchez Yudania)

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1.
  • Giraldo, Sergio, et al. (författare)
  • Large Efficiency Improvement in Cu2ZnSnSe4 Solar Cells by Introducing a Superficial Ge Nanolayer
  • 2015
  • Ingår i: Advanced Energy Materials. - : Wiley. - 1614-6832 .- 1614-6840. ; 5:21
  • Tidskriftsartikel (refereegranskat)abstract
    • A large improvement of Cu2ZnSnSe4 solar cell efficiency is presented based on the introduction of a Ge superficial nanolayer. This improvement is explained by three complementary effects: the formation of a liquid Ge-related phase, the possible reduction of Sn multicharge states, and the formation of GeOx nanoinclusions, which lead to an impressive solar cell (VOC) increase.
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2.
  • Neuschitzer, Markus, et al. (författare)
  • Complex Surface Chemistry of Kesterites : Cu/Zn Reordering after Low Temperature Postdeposition Annealing and Its Role in High Performance Devices
  • 2015
  • Ingår i: Chemistry of Materials. - : American Chemical Society (ACS). - 0897-4756 .- 1520-5002. ; 27:15, s. 5279-5287
  • Tidskriftsartikel (refereegranskat)abstract
    • A detailed study explaining the beneficial effects of low temperature postdeposition annealing combined with selective surface etchings for Cu2ZnSnSe4 (CZTSe) based solar cells is presented. After performing a selective oxidizing surface etching to remove ZnSe secondary phases typically formed during the synthesis processes an additional 200 degrees C annealing step is necessary to increase device performance from below 3% power conversion efficiency up to 8.3% for the best case. This significant increase in efficiency can be explained by changes in the surface chemistry which results in strong improvement of the CdS/CZTSe heterojunction commonly used in this kind of absorber/buffer/window heterojunction solar cells. XPS measurements reveal that the 200 degrees C annealing promotes a Cu depletion and Zn enrichment of the etched CZTSe absorber surface relative to the CZTSe bulk. Raman measurements confirm a change in Cu/Zn ordering and an increase in defect density. Furthermore, TEM microstructural investigations indicate a change of grain boundaries composition by a reduction of their Cu content after the 200 degrees C annealing treatment. Additionally, insights in the CdS/CZTSe interface are gained showing a significant amount of Cu in the CdS buffer layer which further helps the formation of a Cu-depleted surface and seems to play an important role in the formation of the pn-heterojunction.
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3.
  • Platzer Björkman, Charlotte, 1976-, et al. (författare)
  • Back and front contacts in kesterite solar cells : state-of-the-art and open questions
  • 2019
  • Ingår i: Journal of Physics. - : Institute of Physics Publishing (IOPP). - 2515-7655. ; 1:4
  • Tidskriftsartikel (refereegranskat)abstract
    • We review the present state-of-the-art within back and front contacts in kesterite thin film solar cells, as well as the current challenges. At the back contact, molybdenum (Mo) is generally used, and thick Mo(S, Se)2 films of up to several hundred nanometers are seen in record devices, in particular for selenium-rich kesterite. The electrical properties of Mo(S, Se)2 can vary strongly depending on orientation and indiffusion of elements from the device stack, and there are indications that the back contact properties are less ideal in the sulfide as compared to the selenide case. However, the electronic interface structure of this contact is generally not well-studied and thus poorly understood, and more measurements are needed for a conclusive statement. Transparent back contacts is a relatively new topic attracting attention as crucial component in bifacial and multijunction solar cells. Front illuminated efficiencies of up to 6% have so far been achieved by adding interlayers that are not always fully transparent. For the front contact, a favorable energy level alignment at the kesterite/CdS interface can be confirmed for kesterite absorbers with an intermediate [S]/([S]+[Se]) composition. This agrees with the fact that kesterite absorbers of this composition reach highest efficiencies when CdS buffer layers are employed, while alternative buffer materials with larger band gap, such as Cd1−x Zn x S or Zn1−x Sn x O y , result in higher efficiencies than devices with CdS buffers when sulfur-rich kesterite absorbers are used. Etching of the kesterite absorber surface, and annealing in air or inert atmosphere before or after buffer layer deposition, has shown strong impact on device performance. Heterojunction annealing to promote interdiffusion was used for the highest performing sulfide kesterite device and air-annealing was reported important for selenium-rich record solar cells.
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  • Resultat 1-3 av 3

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