SwePub
Sök i SwePub databas

  Utökad sökning

Träfflista för sökning "WFRF:(Sanz Velasco Anke 1971) "

Sökning: WFRF:(Sanz Velasco Anke 1971)

  • Resultat 1-10 av 58
Sortera/gruppera träfflistan
   
NumreringReferensOmslagsbildHitta
1.
  •  
2.
  • Tavakoli Dastjerdi, Mohammad Hadi, 1984, et al. (författare)
  • InGaAs/InAlAs/AlAs Heterostructure Barrier Varactors on Silicon Substrate
  • 2011
  • Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 32:2, s. 140-142
  • Tidskriftsartikel (refereegranskat)abstract
    • We present the results of a study on epitaxial transferof InP-based heterostructure barrier varactor (HBV) materials onto a silicon substrate employing the low-temperature plasma activated bonding technique. The test diodes fabricated on the bonded samples exhibit symmetric electrical characteristics, over the temperature range of 25 ˚C–165 ˚C, and show no degradation compared to previously reported InP-based diodes. Moreover, the onset temperature for debonding, the effective barrier height extracted from the measured data, and the maximum voltage of the HBVs for a current density of 100 A/cm2 were extracted to be 260 ˚C, 0.56 eV, and 10.5 V, respectively.
  •  
3.
  • Tavakoli Dastjerdi, Mohammad Hadi, 1984, et al. (författare)
  • Transfer of InP-based HBV epitaxy onto borosilicate glass substrate by anodic bonding
  • 2010
  • Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 46:14, s. 1013-1014
  • Tidskriftsartikel (refereegranskat)abstract
    • We present a new fabrication process for epitaxial transfer of InP-based heterostructure barrier varactor diodes, as high frequency varactor multipliers, onto low-dielectric borosilicate glass substrate, employing anodic bonding. The fabricated diodes on the new host substrate display symmetric electrical characteristics with only minor differences compared to those of the reference devices on the original InP substrate.
  •  
4.
  •  
5.
  • Amirfeiz, Petra, 1973, et al. (författare)
  • Hydrophobic low temperature wafer bonding; void formation in the oxide free interface
  • 2003
  • Ingår i: Proc. of the 7th Int. Symp. on Semiconductor Wafer Bonding. ; 19, s. 267-
  • Konferensbidrag (refereegranskat)abstract
    • The objective is to investigate plasma assisted bonding processes having the potential of forming oxide-free bonded interfaces. Spontaneous low temperature hydrophobic bonding was achieved using a plasma-assisted technique. High surface energy was obtained when bonding two silicon wafers after argon plasma treatment and a subsequent dip in concentrated HF. In contrast hydrogen plasma caused bonding problems while a mix of hydrogen and nitrogen improved the bondability. A particular interest is directed toward the generation of voids as a consequence of storage at room temperature or low temperature annealing. All samples suffer from void generation both after storage at room temperature and after low temperature annealing.
  •  
6.
  •  
7.
  • Bring, Martin, 1977, et al. (författare)
  • Method for measuring fracture toughness of wafer-bonded interfaces with high spatial resolution
  • 2006
  • Ingår i: Journal of Micromechanics and Microengineering. - 1361-6439 .- 0960-1317. ; 16:6, s. 68-74
  • Tidskriftsartikel (refereegranskat)abstract
    • A test method for adhesion quantification with high spatial resolution of bonded areas is presented. The method is based on a three-point bend chevron test and is applicable especially for small bonded structures. Using an ordinary surface profiler the method is suitable for determining the mode I fracture toughness, K Ic , of bonded areas from 5 × 5 νm 2 to 20 × 20 νm 2 in size. The method is compared quantitatively to the double cantilever beam (DCB) test. Measurements show that the average K Ic value determined using this method is in close accordance with K Ic values measured using the DCB method but a larger spread is observed which may be dedicated to a real spatial variation of K Ic shown by the higher spatial resolution of the presented method. © 2006 IOP Publishing Ltd.
  •  
8.
  •  
9.
  •  
10.
  •  
Skapa referenser, mejla, bekava och länka
  • Resultat 1-10 av 58
Typ av publikation
konferensbidrag (28)
tidskriftsartikel (27)
bokkapitel (2)
doktorsavhandling (1)
Typ av innehåll
refereegranskat (53)
övrigt vetenskapligt/konstnärligt (5)
Författare/redaktör
Sanz-Velasco, Anke, ... (58)
Enoksson, Peter, 195 ... (35)
Schaller, Vincent, 1 ... (14)
Bring, Martin, 1977 (10)
Bengtsson, Stefan, 1 ... (9)
Gatenholm, Paul, 195 ... (8)
visa fler...
Johansson, Christer (8)
Lundgren, Per, 1968 (8)
Naboka, Olga, 1981 (8)
Wahnström, Göran, 19 ... (7)
Rusu, Cristina (7)
Olsson, Eva, 1960 (7)
Kalaboukhov, Alexei, ... (7)
Svensson, Krister, 1 ... (6)
Winkler, Dag, 1957 (6)
Amirfeiz, Petra, 197 ... (6)
Jesorka, Aldo, 1967 (5)
Gustafsson, Stefan, ... (5)
Toriz Gonzalez, Guil ... (4)
Engström, Olof, 1943 (4)
Andersson, Mats, 196 ... (3)
Stake, Jan, 1971 (3)
Müller, Christian, 1 ... (3)
Wang, Ergang, 1981 (3)
Vukusic, Josip, 1972 (3)
Bäcke, Olof, 1984 (3)
Lindqvist, Camilla, ... (3)
Sadeghi, Mahdad, 196 ... (2)
Kuzmenko, Volodymyr, ... (2)
Rödjegård, Henrik (2)
Petersson, K (2)
Wipenmyr, Jan (2)
Johansson, David (2)
Hedsten, Karin, 1964 (2)
Jansen, H. (1)
Inganäs, Olle (1)
Moretto, P (1)
Sepehri, Sobhan, 198 ... (1)
Svensson, Krister (1)
Kollberg, Erik, 1937 (1)
Chang, S (1)
Andersson, Gert (1)
Olin, Håkan, 1957- (1)
Karabulut, Erdem, 19 ... (1)
Hedfalk, Kristina, 1 ... (1)
Kang, S (1)
Liu, Jing (1)
Bergqvist, Jonas (1)
Henriksson, Patrik, ... (1)
Bounioux, C. (1)
visa färre...
Lärosäte
Chalmers tekniska högskola (58)
Karlstads universitet (5)
RISE (2)
Göteborgs universitet (1)
Linköpings universitet (1)
Språk
Engelska (58)
Forskningsämne (UKÄ/SCB)
Teknik (53)
Naturvetenskap (26)
Medicin och hälsovetenskap (3)

År

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Stäng

Kopiera och spara länken för att återkomma till aktuell vy