| 1. |
- Muratov, Dmitry S., et al.
(författare)
-
Slot-Die-Printed Two-Dimensional ZrS3 Charge Transport Layer for Perovskite Light-Emitting Diodes
- 2019
-
Ingår i: ACS Applied Materials and Interfaces. - : AMER CHEMICAL SOC. - 1944-8244 .- 1944-8252. ; 11:51, s. 48021-48028
-
Tidskriftsartikel (refereegranskat)abstract
- Liquid-phase exfoliation of zirconium trisulfide (ZrS3) was used to produce stable and ready-to-use inks for solution-processed semiconductor thin-film deposition. Ribbon-like layered crystals of ZrS3 were produced by the chemical vapor transport method and were then exfoliated in three different solvents: dimethylformamide, ethanol, and isopropyl alcohol. The resulting ZrS3 dispersions were compared for stability and the ability to form continuous films on top of the perovskite layer in light-emitting diodes with the ITO/PEDOT:PSS/MAPbBr(3)/2D-ZrS3/LiF/Al structure. Film deposition was performed by using either spray or slot-die coating methods. The slot-die coating route proved to produce better and more uniform films with respect to spray coating. We found that the 2D ZrS3 electron injection layer (EIL) stabilized the interface between the perovskite and LiF/Al cathode, reducing the turn-on voltage to 2.8 V and showing a luminance that does not degrade during voltage sweep. On the other hand, ELL-free devices show electroluminescence on the first voltage sweep that reduces almost to zero in the subsequent sweeps. Combining physical device simulation and density functional theory calculation, we are able to explain these results in terms of lowering the electron injection barrier at the cathode.
|
|
| 2. |
- Ishteev, Arthur, et al.
(författare)
-
Single source chemical vapor deposition (ssCVD) for highly luminescent inorganic halide perovskite films
- 2021
-
Ingår i: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 119:7
-
Tidskriftsartikel (refereegranskat)abstract
- Recent studies of lead halide perovskites demonstrate outstanding optoelectronic properties for thin-film semiconductor device application. Perovskite photovoltaic and light-emitting diodes are on the way to the mass production and spread in commercial semiconductor devices. The lab-to-fab transition of perovskite devices requires adaptation of perovskite deposition methods to industrial semiconductor fabrication standards. In this work, we demonstrated the formation of highly luminescence perovskite films by single-source chemical vapor deposition (ssCVD). Several stoichiometry compositions were prepared from inorganic precursors of CsBr and PbBr2 by dry mechanochemical synthesis with following evaporation. The combination of mechanochemical synthesis and ssCVD is an attractive approach due to the ability to scale up to industrial level and the precise control over the evaporation rate with a single source. Among all compositions CsBr:PbBr2, we show that CsPb2Br5 maintains phase composition and photoluminescent properties for powder and film. This work provides a comparative study of evaporated film properties (PL, XRD, TEM) and modeling calculations of interphase optical transitions.
|
|
