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- Johansson, Mikael, et al.
(författare)
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ZrO2 and ZrO2/Y2O3 gate dielectrics prepared by evaporation and annealing processes
- 2002
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Ingår i: ASDAM '02. Conference Proceedings. Fourth International Conference on Advanced Semiconductor Devices and Microsystems. ; , s. 279-
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Konferensbidrag (refereegranskat)abstract
- The electrical characteristics of MOS capacitors with ZrO2 gate dielectric prepared by e-beam evaporation of Zr or Yttrium Stabilized Zirconia (YSZ) and subsequent thermal treatment are reported. With this method dielectrics corresponding to an equivalent oxide thickness (EOT) of 1.9 nm and a relative dielectric constant of approximately 15 have been prepared. The effect of annealing on Zr incorporation into the Si substrate is investigated SIMS analysis showed no signs of Zr diffusion in the substrate at temperatures as high as 900°C and that significant diffusion from the dielectric layer occur only at 1100°C
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| 2. |
- Johansson, Mikael, et al.
(författare)
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ZrO2 gate dielectrics prepared by e-beam deposition of Zr and YSZ films and post annealing processes
- 2002
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Ingår i: ESSDERC 2002. Proceedings of the 32nd European Solid-State Device Research Conference. ; , s. 419-
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Konferensbidrag (refereegranskat)abstract
- In this paper we present the electrical performance of MOS capacitors with ZrO2 gate dielectric prepared by e-beam evaporation of zirconium and yttrium stabilized zirconia (YSZ) and subsequent thermal treatment. To this stage we have reached an equivalent oxide thickness (EOT) of 1.9 nm. The effect of post-oxidation annealing on Zr incorporation into the Si substrate is investigated. SIMS analysis showed no signs of Zr diffusion in the substrate at temperatures as high as 900°C and that significant diffusion occurs only at 1100°C
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