| 1. |
- Davydov, SY, et al.
(författare)
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Simple model for calculation of SiC epitaxial layers growth rate in vacuum.
- 2004
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Ingår i: Materials Science Forum, Vols. 457-460. ; , s. 249-252
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Konferensbidrag (refereegranskat)abstract
- Within the frame of a simple model, based on Hertz-Knudsen equation with account of temperature dependant sticking coefficient, temperature dependence of silicon carbide epitaxial layers growth rate in vacuum has been calculated. Calculation results are in a good agreement with the experimental data.
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| 2. |
- Ivanov, AM, et al.
(författare)
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P-type 6H-SiC films in the creation of triode structures for low ionization radiation
- 2003
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Ingår i: Materials Science Forum, Vols. 433-436. ; , s. 969-972
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Konferensbidrag (refereegranskat)abstract
- The signal value of the transistor-like detector on applied voltage was investigated. It was measure induced-current recording from fluxes of X-ray and optical quanta. A superlinear rise in the resulting signal was observed with increasing voltage. The signal was amplified by a factor of several tens with respect to the value chosen for normalization. A description in terms of the phototriode model gives acceptable values for the main parameters: base width, diffusion length of electrons, and space charge region of the collector. It is important that SiC films with the thickness d similar to 10 mum can be used to detect penetrating radiation, for example, X-ray. The effective thickness of the films exceeds d by the signal amplification factor (and proves to be in range of hundred mum).
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| 3. |
- Lebedev, Alexander, et al.
(författare)
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Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum
- 2000
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Ingår i: Semiconductors (Woodbury, N.Y.). - 1063-7826 .- 1090-6479. ; 34:10, s. 1133-1136
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Tidskriftsartikel (refereegranskat)abstract
- The parameters of deep-level centers in lightly doped 4H-SiC epilayers grown by sublimational epitaxy and CVD were investigated. Two deep-level centers with activation energies E-c - 0.18 eV and E-c - 0.65 eV (Z1 center) were observed and tentatively identified with structural defects of the SiC crystal lattice. The Z1 center concentration is shown to fall with decreasing uncompensated donor concentration N-d - N-a in the layers. For the same N-d - N-a, the Z1 center concentration is lower in layers with a higher dislocation density. (C) 2000 MAIK "Nauka/Interperiodica".
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| 4. |
- Shulpina, IL, et al.
(författare)
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X-ray diffraction analysis of epigrowth on porous 4H-SiC substrates
- 2005
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Ingår i: Materials Science Forum, Vols. 483-485. ; , s. 265-268
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Konferensbidrag (refereegranskat)abstract
- The methods of X-ray topography and diffractometry have been applied to characterize the structure of epilayers grown on porous layers. Two geometrical configurations of defects determined to be stacking faults (SF) were revealed: i) with the images of triangular shape with the edge size 560 gm along the <, 10-10>, directions, ii) linear shape along the [11-20] direction. The sources of SFs are located within the epilayer and start from the epilayer / porous layer interface. We propose that the source of SFs is connected with graphitization of porous layer at the temperature of epitaxy.
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