| 1. |
- Mikhaylova, A. I., et al.
(författare)
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Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide
- 2016
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Ingår i: Semiconductors (Woodbury, N.Y.). - 1063-7826 .- 1090-6479. ; 50:1, s. 103-105
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Tidskriftsartikel (refereegranskat)abstract
- The effect of phosphorus implantation into a 4H-SiC epitaxial layer immediately before the thermal growth of a gate insulator in an atmosphere of dry oxygen on the reliability of the gate insulator is studied. It is found that, together with passivating surface states, the introduction of phosphorus ions leads to insignificant weakening of the dielectric breakdown field and to a decrease in the height of the energy barrier between silicon carbide and the insulator, which is due to the presence of phosphorus atoms at the 4H-SiC/SiO2 interface and in the bulk of silicon dioxide.
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| 2. |
- Elahipanah, Hossein, et al.
(författare)
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Design optimization of a high temperature 1.2 kV 4H-SiC buried grid JBS rectifier
- 2017
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Ingår i: 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016. - : Trans Tech Publications Inc.. - 9783035710434 ; , s. 455-458
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Konferensbidrag (refereegranskat)abstract
- 1.2 kV SiC buried grid junction barrier Schottky (BG-JBS) diodes are demonstrated. The design considerations for high temperature applications are investigated. The design is optimized in terms of doping concentration and thickness of the epilayers, as well as grid size and spacing dimensions, in order to obtain low on-resistance and reasonable leakage current even at high temperatures. The device behavior at temperatures ranging from 25 to 250ºC is analyzed and measured on wafer level. The forward voltage drop of 1.1 V at 100 A/cm2 and 3.8 V at 1000 A/cm2 is measured, respectively. At reverse voltage of 1 kV, a leakage current density below 0.1 μA/cm2 and below 0.1 mA/cm2 is measured at 25 and 250ºC, respectively. This proves the effective shielding effect of the BG-JBS design and provides benefits in high voltage applications, particularly for high temperature operation.
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| 3. |
- Kobayashi, M., et al.
(författare)
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3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide
- 2011
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Ingår i: Materials Science Forum. - 0255-5476 .- 1662-9752. ; 679-680, s. 645-648
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Tidskriftsartikel (refereegranskat)abstract
- 3C-SiC MOSFET with 200 cm2/Vs channel mobility was fabricated. High performance device processes were adopted, including room temperature implantation with resist mask, polysilicon-metal gates, aluminium interconnects with titanium and titanium nitride and a specially developed activation anneal at 1600°C in Ar to get a smooth 3C-SiC surface and hence the expected high channel mobility. CVD deposited oxide with post oxidation annealing was investigated to reduce unwanted oxide charges and hence to get a better gate oxide integrity compared to thermally grown oxides. 3C-SiC MOSFETs with 600 V blocking voltage and 10 A drain current were fabricated using the improved processes described above. The MOSFETs assembled with TO-220 PKG indicated specific on-resistances of 5 to 7 mΩcm2.
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| 4. |
- Mikhaylov, Aleksey I., et al.
(författare)
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On the ion implantation of phosphorus as a method for the passivation of states at the interface between 4H-SiC and SiO2 produced by thermal oxidation in dry oxygen
- 2014
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Ingår i: Semiconductors (Woodbury, N.Y.). - : Maik Nauka-Interperiodica Publishing. - 1063-7826 .- 1090-6479. ; 48:12, s. 1581-1585
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Tidskriftsartikel (refereegranskat)abstract
- A method is suggested for reducing the density of surface states at the 4H-SiC/SiO2 interface by the implantation of phosphorus ions into a 4H-SiC epitaxial layer immediately before the growth of a gate insulator in an atmosphere of dry oxygen. A significant decrease in the density of surface states is observed at a phosphor-ion concentration at the SiO2/SiC interface exceeding 1018 cm−3. However, together with the passivation of surface states, the introduction of phosphorus ions leads to an increase in the built-in charge in the insulator and also slightly deteriorates the reliability of the gate insulator fabricated by this technique.
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| 5. |
- Esteve, Romain, et al.
(författare)
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Comparative study of thermal oxides and post-oxidized depositedoxides on n-type free standing 3C-SiC
- 2010
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Ingår i: Materials Science Forum. - 0255-5476 .- 1662-9752. ; 645-648, s. 829-832
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Tidskriftsartikel (refereegranskat)abstract
- The electrical properties of oxides fabricated on n-type 3C-SiC (001) using wet oxidationand an advanced oxidation process combining SiO 2 deposition with rapid post oxidation steps havebeen compared. Two alternative SiO 2 deposition techniques have been studied: the plasmaenhanced chemical vapor deposition (PECVD) and the low pressure chemical vapor deposition(LPCVD). The post-oxidized PECVD oxide is been demonstrated to be beneficial in terms ofinterface traps density and reliability.
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| 6. |
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| 7. |
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| 8. |
- Esteve, Romain, et al.
(författare)
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Toward 4H-SiC MISFETs Devices Based on ONO (SiO2-Si3N4-SiO2) Structures
- 2011
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Ingår i: Journal of the Electrochemical Society. - : The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 5:158, s. 496-501
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Tidskriftsartikel (refereegranskat)abstract
- The electrical properties of metal-insulator-semiconductor (MIS) devices based on ONO (SiO2-Si3N4-SiO2) structures fabricatedon n-type 4H-SiC (0001) epilayers have been investigated. Three different combinations of low-pressure chemical vapordeposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD) and thermal oxidations (TO) in N2O and wet oxygenH2O:O2 were studied for the formation of the ONO stack. In addition, the influence of the thickness of SiO2and Si3N4 layers were considered and recommendations for optimal ONO structure are given. Oxide characterization tests and reliability investigations have been performed at room and high temperatures. This comparative study resulted in the development of ONO structuresdescribing low oxide/near interface/interface defects and high reliability of the devices even at high temperature.
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| 9. |
- Hjort, T., et al.
(författare)
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High temperature capable SiC Schottky diodes, based on buried grid design
- 2014
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Ingår i: International Conference and Exhibition on High Temperature Electronics. ; , s. 158-160
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Konferensbidrag (refereegranskat)abstract
- Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable T0254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron’s buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.
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| 10. |
- Lim, Jang-Kwon, et al.
(författare)
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A theoretical and experimental comparison of 4H- and 6H-SiC MSM UV photodetectors
- 2012
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Ingår i: Silicon Carbide and Related Materials 2011. - : Trans Tech Publications Inc.. - 9783037854198 ; , s. 1207-1210
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Konferensbidrag (refereegranskat)abstract
- This paper reports on fabrication and modeling of 4H- and 6H-SiC metal-semiconductor-metal (MSM) photodetectors (PDs). MSM PDs have been fabricated on 4H-SiC and 6H-SiC epitaxial layers, and their performance analyzed by MEDICI simulation and measurements. The simulations were also used to optimize the sensitivity by varying the width and spacing of the interdigitated electrodes. The fabricated PDs with 2 ÎŒm wide metal electrodes and 3 ÎŒm spacing between the electrodes exhibited, under UV illumination, a peak current to dark current ratio of 10 5 and 10 4 in 4H-SiC and 6H-SiC, respectively. The measured spectral responsivity of 6H-SiC PDs was higher compared to that of 4H-SiC PDs, with a cutoff at 407 nm compared to 384 nm in 4H-SiC PDs. Also the peak responsivity occurred at a shorter wavelength in 6H material. A high rejection ratio between the photocurrent and dark current was found in both cases. These experimental results were in agreement with simulation.
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