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- Paskov, Plamen, et al.
(författare)
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Emission properties of a -plane GaN grown by metal-organic chemical-vapor deposition
- 2005
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 98:9, s. 093519-
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Tidskriftsartikel (refereegranskat)abstract
- We report on the emission properties of nonpolar a -plane GaN layers grown on r -plane sapphire. Temperature-, excitation-density-, and polarization-dependent photoluminescences and spatially resolved microphotoluminescence and cathodoluminescence are employed in order to clarify the nature of the different emission bands in the 3.0-3.5 eV spectral range. In the near band-edge region the emission lines of the donor-bound excitons (3.472 eV) and free excitons (3.478 eV) are resolved in the polarized low-temperature spectra, indicating a good quality of the layers. At low energies two other emissions bands with intensity and shape varying with the excited area are observed. The 3.42 eV emission commonly attributed to the excitons bound to basal plane stacking faults shows thermal quenching with two activation energies (7 and 30 meV) and an S-shaped temperature dependence of the peak position. This behavior is analyzed in terms of hole localization in the vicinity of the stacking faults. The emission band that peaked at 3.29 eV is found to blueshift and saturate with increasing excitation intensity. The spatially resolved cathodoluminesence measurements show that the emission is asymmetrically distributed around the triangular-shaped pits occurring at the surface. The 3.29 eV emission is suggested to involve impurities, which decorate the partial dislocation terminating the basal stacking faults. © 2005 American Institute of Physics.
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| 2. |
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| 3. |
- Paskov, Plamen, et al.
(författare)
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Structural defect-related emissions in nonpolar a-plane GaN
- 2006
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Ingår i: Physica. B, Condensed matter. - : Elsevier BV. - 0921-4526 .- 1873-2135. ; 376, s. 473-476
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Tidskriftsartikel (refereegranskat)abstract
- We have studied the optical emission properties of a-plane GaN layers grown on r-plane sapphire by metalorganic chemical vapor deposition. Together with the typical band edge exciton emission, the photoluminescence (PL) spectra reveal three low-energy emissions peaked at 3.42, 3.34 and 3.29eV. which are related to structural defects. Temperature and excitation dependent stationary PL and the time-resolved PL have been employed in order to understand the exact origin of these emissions. The 3.42 and 3.34eV emissions are found to be of an intrinsic origin and are associated with carriers localized at stacking faults. The emission at 3.29eV shows a donor-acceptor pair behavior suggesting that impurities attached to structural defects most likely partial dislocations terminating stacking faults are involved. (c) 2005 Elsevier B.V. All rights reserved.
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| 4. |
- Schifano, R., et al.
(författare)
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Electrical and optical characterization of 4H-SiC diodes for particle detection
- 2005
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 97:10, s. 103539-
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Tidskriftsartikel (refereegranskat)abstract
- The electronic and optical properties of several (medium to high quality) 4H-SiC epitaxial sensors for particle detection have been studied. The samples are n -doped Schottky diodes with different nitrogen concentrations (6× 1013 cm-3 -5× 1015 cm-3) and thicknesses (20-40 µm). A full electrical and optical characterization has been performed by capacitance versus voltage measurements and near-band-edge low-temperature photoluminescence. The effective doping along the epilayer and the depletion width have been determined and data are consistent with the charge collection efficiency characterization performed with a minimum ionizing ? -source. All the investigated samples exhibit a 100% collection efficiency. In particular, the best samples yield a highly reproducible signal, well separated from the pedestal. Photoluminescence results show a linear relationship between the effective doping and the ratio of nitrogen-bound excitonic emission (Q0) and free excitonic line (I76), in agreement with a previous work on 4H-SiC with a higher doping concentration [I. G. Ivanov, C. Hallin, A. Henry, O. Kordina, and E. Janzn, J. Appl. Phys. 80, 3504 (1996)]. Moreover we show that the dependence of the major spectral features as a function of the penetration depth of the exciting laser beam can quantitatively provide information on substrate contribution to the photoluminescence. In conclusion, we bring evidence that a detailed characterization of SiC-based detectors, by all optical techniques, yields an accurate value for the net doping and gives a qualitative information on the epilayer thickness prior to any electrical wafer tests. © 2005 American Institute of Physics.
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