| 1. |
- Doyle, J P, et al.
(författare)
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Observation of near-surface electrically active defects in n-type 6H-SiC
- 1998
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 83, s. 3649-3651
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Tidskriftsartikel (refereegranskat)abstract
- In n-type 6H-SiC epitaxial layers grown by vapor phase epitaxy, we find that in contrast to the majority of the epitaxial layer, where electrically active defects are observed with a concentration less than 1 X 10(-13) cm(-3), a region near the front surface contains defects with concentrations approaching 10(14) cm(-3). A relationship between the near-surface defects and metallic impurities is suggested by a Ti concentration of 1 X 10(16) cm(-3) in this region. The high concentration of near surface defects is found to significantly reduce the carrier lifetime. (C) 1998 American Institute of Physics. [S0021-8979(98)03007-2].
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| 2. |
- Esteve, Romain, et al.
(författare)
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Advanced oxidation process combining oxide deposition and short postoxidation step for N-type 3C- and 4H-SiC
- 2009
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 106:4
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Tidskriftsartikel (refereegranskat)abstract
- The electrical properties of oxides fabricated on n-type 3C-SiC (001) and 4H-SiC (0001) epilayers using an advanced oxidation process combining plasma enhanced deposition and rapid postoxidation steps have been investigated. Three gas atmospheres have been studied for the postoxidation steps: N2O, dry, and wet oxygen (H2O). In comparison, additional oxides using postannealing in pure N-2 have been fabricated. The implementation of wet oxygen resulted. in a significant decrease in the interface traps density, in a reduction of oxide fixed charges and in the increased breakdown field in the case of 3C-SiC. In the case of 4H-SiC the postoxidation in N2O is a superior postprocessing step.
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| 3. |
- Esteve, Romain, et al.
(författare)
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Comparative study of thermally grown oxides on n-type free standing 3C-SiC (001)
- 2009
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 106:4
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Tidskriftsartikel (refereegranskat)abstract
- Alternative ways to improve the oxidation process of free standing 3C-SiC (001) are developed and tested with the aim to reduce the fixed and mobile charges in the oxide and at the SiO2/3C-SiC interface. The postoxidation annealing step in wet oxygen (O-2+H-2) is demonstrated to be beneficial for n-type 3C-SiC metal-oxide-semi conductor capacitors resulting in significant reduction in flat band voltage shift, effective oxide charge density, and density of interface traps. The inefficiency of nitridation for the improvement of the oxide quality on 3C-SiC is discussed.
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| 4. |
- Esteve, Romain, et al.
(författare)
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Electrical properties of MOS structures based on 3C-SiC(111) epilayers grown by Vapor-Liquid-Solid Transport and Chemical-Vapor Deposition on 6H-SiC(0001)
- 2010
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Ingår i: AIP Conference Proceedings. - : AIP Publishing. - 9780735408470 ; , s. 55-58
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Konferensbidrag (refereegranskat)abstract
- The electrical properties of post-oxidized PECVD oxides in wet oxygen based on 3C-SiC(111) epilayers grown by Vapor-Liquid-Solid and Chemical-Vapor-Deposition mechanisms on 6H-SiC(0001) have been studied. Different 6H-SiC(0001) samples exhibiting diverse crystal orientations (on-axis, 2 degrees off-axis) and growth conditions were regarded. A comparative study of oxide qualities has been carried out via capacitance and conductance measurements (C-G-V). Achieved interface traps densities and effective oxide charges were compared for the different samples. Reliability issues have been considered via current measurements (I-V and TZDB) and statistical data treatment techniques (Weibull plots). Oxides based on 3C-SiC layer grown by a process combining VLS and CVD methods demonstrated low interface states densities D-it of 1.2 x 10(10) eV(-1)cm(-2) at 0.63 eV below the conduction band and fixed oxide charges Q(eff)/(g) estimated to -0.1 x 10(11) cm(-2)
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| 5. |
- Ghandi, Reza, et al.
(författare)
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Experimental evaluation of different passivation layers on the performance of 3kV 4H-SiC BJTs
- 2010
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Ingår i: Materials Science Forum. - 0255-5476 .- 1662-9752. ; 645-648:Part 1-2, s. 661-664
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Tidskriftsartikel (refereegranskat)abstract
- In this work, the electrical performance in terms of maximum current gain, ON-resistance and blocking capability has been compared for 4H-SiC BJTs passivated with different surface passivation layers. Variation in BJT performance has been correlated to densities of interface traps and fixed oxide charge, as evaluated through MOS capacitors. Six different methods were used to fabricate SiO2 surface passivation on BJT samples from the same wafer. The highest current gain was obtained for PECVD deposited SiO2 which was annealed in N2O ambient at 1100 degrees C during 3 hours. Variations in breakdown voltage for different surface passivations were also found, and this is attributed to differences in fixed oxide charge that can affect the optimum dose of the high voltage JTE termination.
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| 6. |
- Nordell, Nils, et al.
(författare)
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Boron implantation and epitaxial regrowth studies of 6H SiC
- 1998
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Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 0361-5235 .- 1543-186X. ; 27:7, s. 833-837
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Tidskriftsartikel (refereegranskat)abstract
- Implantation of B has been performed into an epitaxially grown layer of 6H SiC, at two different B concentrations, 2 x 10(16) cm(-3) and 2 x 10(18) cm(-3). Subsequently, an epitaxial layer was regrown on the B implanted layer. The samples were investigated by transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS). In the highly B-doped layers plate-like defects were found, associated with large strain fields, and an increased B concentration. These defects were stable at the originally implanted region during regrowth and at anneal temperatures up to 1700 degrees C. In the samples implanted with the lower B concentration, no crystal defects could be detected by TEM. No threading dislocations or other defects were observed in the regrown epitaxial layer, which shows the possibility to grow a layer with high crystalline quality on B implanted 6H SiC. By SIMS, it was found that B piles up at the interface to the regrown layer, which could be explained by enhanced diffusion from an increased concentration of point defects created by implantation damage in the region. B is also spread out into the original crystal and in the regrown layer at a concentration of below 2 x 10(16) cm(-3), with a diffusion constant estimated to 1.3 x 10(-12) cm(2)s(-1). This diffusion is most probably not driven by implantation damage, but by intrinsic defects in the grown crystal. Our investigation shows that the combination of implantation and subsequent regrowth techniques could be used in SiC for building advanced device structures, with the crystal quality in the regrown layer not being deteriorated by crystal defects in the implanted region. A device process using B implantation and subsequent regrowth could on the other hand be limited by the diffusion of B.
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| 7. |
- Bakowski, Mietek, et al.
(författare)
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Design and characterization of newly developed 10 kV 2 A SiC p-i-n diode for soft-switching industrial power supply
- 2015
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Ingår i: IEEE Transactions on Electron Devices. - : Institute of Electrical and Electronics Engineers Inc.. - 0018-9383 .- 1557-9646. ; 62:2, s. 366-373
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Tidskriftsartikel (refereegranskat)abstract
- 10 kV, 2 A SiC p-i-n diodes have been designed and fabricated. The devices feature excellent stability of forward characteristics and robust junction termination with avalanche capability of 1 J. The fabricated diodes have been electrically evaluated with respect to dynamic ON-state voltage, reverse recovery behavior, bipolar stability, and avalanche capability. More than 60% reduction of losses has been demonstrated using newly developed 10-kV p-i-n diodes in a multikilowatt high voltage, high-frequency dc/dc soft-switching converter
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