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- Mei, Antonio B., et al.
(författare)
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Adsorption-controlled growth and properties of epitaxial SnO films
- 2019
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Ingår i: Physical Review Materials. - : AMER PHYSICAL SOC. - 2475-9953. ; 3:10
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Tidskriftsartikel (refereegranskat)abstract
- When it comes to providing the unusual combination of optical transparency, p-type conductivity, and relatively high mobility, Sn2+-based oxides are promising candidates. Epitaxial films of the simplest Sn2+ oxide, SnO, are grown in an adsorption-controlled regime at 380 degrees C on Al2O3 substrates by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A commensurately strained monolayer and an accompanying van der Waals gap is observed near the substrate interface, promoting layers with high structural perfection notwithstanding a large epitaxial lattice mismatch (-12%). The unintentionally doped films exhibit p-type conductivity with carrier concentration 2.5 x 10(16) cm(-3) and mobility 2.4 cm(2) V(-1)s(-1) at room temperature. Additional physical properties are measured and linked to the Sn2+ valence state and corresponding lone-pair charge-density distribution.
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