| 1. |
- Angelov, Iltcho, 1943, et al.
(författare)
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Large-Signal Time-Domain Waveform-Based Transistor Modeling
- 2013
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Ingår i: Microwave De-embedding: From Theory to Applications. - 9780124017009 ; , s. 189-223
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Bokkapitel (övrigt vetenskapligt/konstnärligt)abstract
- Nonlinear models of microwave transistors are essential for the design of high-frequency nonlinear circuits, such as power amplifiers or mixers. Among the existing modeling techniques, measurement-based approaches have gained huge attention from researchers in the last decades. Especially, nonlinear measurements-driven model extraction is preferred for transistors exploited in the design of power amplifiers and mixers. This chapter mainly deals with the generation of empirical transistor models starting from large-signal time-domain waveforms. Specifically, a widely used model available in commercial CAD tools is adopted, and the extraction procedure of the model parameters is outlined in detail. Moreover the advantage of using time-domain waveforms at different frequencies is highlighted. More specifically, by making use of time-domain waveforms at frequencies in the kHz-MHz range, one can separately model the behavior of the transistor output current generator, which is more prone to low-frequency dispersive effects. In fact at low frequencies the effect of the nonlinear transistor capacitance is significantly reduced and, therefore, already "de-embedded" from the measured time-domain waveforms. Once the model of the output current generator is available, one can use high-frequency measurements to determine the nonlinear capacitances (or charges). Several modeling examples of different transistor technologies, such as gallium-arsenide and gallium-nitride, are reported. © 2014 Elsevier Ltd. All rights reserved.
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| 2. |
- Avolio, G., et al.
(författare)
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A novel technique for the extraction of nonlinear model for microwave transistors under dynamic-bias operation
- 2013
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467361767 ; , s. Art. no. 6697394-
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Konferensbidrag (refereegranskat)abstract
- In this work we describe a novel technique for the extraction of nonlinear model for microwave transistors from nonlinear measurements obtained by simultaneously driving the device under test with low- and high-frequency excitations. Specifically, the large-signal operating point of the device is set by large-signal low-frequency excitations. On top of these a tickle tone at high-frequency is applied. In this way, one can separate the contributions of the IDS current source and the charge sources by a single measurement. The nonlinear model, based on equations available in commercial CAD tools, is extracted for a 0.15 μm GaAs pHEMT. Good agreement is obtained between model predictions and experimental data.
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| 3. |
- Avolio, G., et al.
(författare)
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Nonlinear model for 40-GHz cold-FET operation
- 2014
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Ingår i: International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2014.
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Konferensbidrag (refereegranskat)abstract
- We extract the nonlinear model of a 0.15 μm GaAs pHEMT for cold-FET mixer applications. The model parameters are extracted from experimental data obtained by simultaneously driving the device under test with low-frequency large signals and a tickle tone at the RF operating frequency. The advantage of this approach is twofold. Firstly, as a result of a single measurement one can get separately the nonlinear currents and charge. Secondly, one can perform nonlinear characterization, and subsequently modeling, even if the RF frequency is such that its harmonics cannot be measured by today's nonlinear network vector analyzers.
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| 4. |
- Avolio, G., et al.
(författare)
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Small-Versus Large-Signal Extraction of Charge Models of Microwave FETs
- 2014
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Ingår i: IEEE Microwave and Wireless Components Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 1558-1764 .- 1531-1309. ; 24:6, s. 394-396
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Tidskriftsartikel (refereegranskat)abstract
- In this letter we extract the parameters of the charge equations of a microwave transistor nonlinear model which is available in commercial CAD tools. In particular, the charge model parameters are extracted starting from small- and large-signal measurements. A better accuracy can be achieved when using large-signal measurements since the model parameters are obtained from experimental data which better reproduce the actual operating condition of the device under test. An advanced 0.15 x 300 mu m(2) pHEMT in GaAs technology, aimed at cold-FET mixer design, is considered as case study.
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| 5. |
- Crupi, G., et al.
(författare)
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Purely analytical extraction of an improved nonlinear FinFET model including non-quasi-static effects
- 2009
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317. ; 86:11, s. 2283-2289
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Tidskriftsartikel (refereegranskat)abstract
- An analytical procedure is proposed for extracting a new nonlinear FinFET model, which accounts for non-quasi static effects. The accuracy and the robustness of the obtained nonlinear model are completely validated through the comparison between simulated and measured device behaviour in both linear and nonlinear cases. This study clearly shows that the inclusion of the non-quasi-static phenomena leads to significant model simulation improvements, which become more pronounced at higher frequency. (C) 2009 Elsevier B.V. All rights reserved.
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