| 1. |
- Briley, Chad, et al.
(författare)
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Effects of annealing and conformal alumina passivation on anisotropy and hysteresis of magneto-optical properties of cobalt slanted columnar thin films
- 2017
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Ingår i: Applied Surface Science. - : ELSEVIER SCIENCE BV. - 0169-4332 .- 1873-5584. ; 421, s. 320-324
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Tidskriftsartikel (refereegranskat)abstract
- We present magneto-optical dielectric tensor data of cobalt and cobalt oxide slanted columnar thin films obtained by vector magneto-optical generalized ellipsometry. Room-temperature hysteresis magnetization measurements were performed in longitudinal and polar Kerr geometries on samples prior to and after a heat treatment process with and without a conformal Al2O3 passivation coating. The samples have been characterized by generalized ellipsometry, scanning electron microscopy, and Raman spectroscopy in conjuncture with density functional theory. We observe strongly anisotropic hysteresis behaviors, which depend on the nanocolumn and magnetizing field orientations. We find that deposited cobalt films that have been exposed to heat treatment and subsequent atmospheric oxidation into Co3O4, when not conformally passivated, reveal no measurable magneto-optical properties while cobalt films with passivation coatings retain highly anisotropic magneto-optical properties (C) 2016 Published by Elsevier B.V.
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| 2. |
- Mock, Alyssa, et al.
(författare)
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Anisotropy, band-to-band transitions, phonon modes, and oxidation properties of cobalt-oxide core-shell slanted columnar thin films
- 2016
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Ingår i: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 108:5, s. 051905-
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Tidskriftsartikel (refereegranskat)abstract
- Highly ordered and spatially coherent cobalt slanted columnar thin films (SCTFs) were deposited by glancing angle deposition onto silicon substrates, and subsequently oxidized by annealing at 475 degrees C. Scanning electron microscopy, Raman scattering, generalized ellipsometry, and density functional theory investigations reveal shape-invariant transformation of the slanted nanocolumns from metallic to transparent metal-oxide core-shell structures with properties characteristic of spinel cobalt oxide. We find passivation of Co-SCTFs yielding Co-Al2O3 core-shell structures produced by conformal deposition of a few nanometers of alumina using atomic layer deposition fully prevents cobalt oxidation in ambient and from annealing up to 475 degrees C. (C) 2016 AIP Publishing LLC.
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| 3. |
- Wilson, Peter M., et al.
(författare)
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Solution-stable anisotropic carbon nanotube/graphene hybrids based on slanted columnar thin films for chemical sensing
- 2016
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Ingår i: RSC Advances. - : ROYAL SOC CHEMISTRY. - 2046-2069. ; 6:68, s. 63235-63240
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Tidskriftsartikel (refereegranskat)abstract
- Slanted columnar thin films (SCTFs) are promising anisotropic nano-structures for applications in optical sensing and chemical separation. However, the wide use of SCTFs is significantly limited by their poor mechanical properties and structural stability, especially in liquid media. In this work, we demonstrate the fabrication of solution-stable carbon nanotube (CNT)/graphene hybrid structures based on cobalt SCTFs. The CNT/graphene hybrid structures were synthesized through the use of a titanium underlayer for Co slanted nanopillars as a chemical vapor deposition catalyst, which allows simultaneous growth of CNTs at the Co/Ti interface and three-dimensional graphene over the surface of cobalt. Importantly, the CNT/graphene hybrid structures retain the anisotropy of the parent Co SCTFs and thus remain suitable for optical sensing. Graphene/CNT modification of Co SCTFs not only improves their stability in solutions but also enables their functionalization with pyrene-modified DNA probes, which can be monitored in real time by in situ ellipsometry measurements. In turn, the solution-stable DNA-modified SCTFs may find a wide range of applications in biosensing. The described synthetic approach that allows simultaneous growth of CNTs and graphene by engineering Co/Ti interfaces may also be applied to the fabrication of other kinds of complex CNT/graphene hybrid materials.
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| 4. |
- Gogova, Daniela, 1967-, et al.
(författare)
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Epitaxial growth of β-Ga2O3 by hot-wall MOCVD
- 2022
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Ingår i: AIP Advances. - : AIP Publishing. - 2158-3226. ; 12:5
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Tidskriftsartikel (refereegranskat)abstract
- The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown to enable superior material quality and high performance devices based on wide bandgap semiconductors, such as Ga(Al)N and SiC, has been applied to the epitaxial growth of beta-Ga2O3. Epitaxial beta-Ga2O3 layers at high growth rates (above 1 mu m/h), at low reagent flows, and at reduced growth temperatures (740 degrees C) are demonstrated. A high crystalline quality epitaxial material on a c-plane sapphire substrate is attained as corroborated by a combination of x-ray diffraction, high-resolution scanning transmission electron microscopy, and spectroscopic ellipsometry measurements. The hot-wall MOCVD process is transferred to homoepitaxy, and single-crystalline homoepitaxial beta-Ga2O3 layers are demonstrated with a 201 rocking curve width of 118 arc sec, which is comparable to those of the edge-defined film-fed grown (201) beta-Ga2O3 substrates, indicative of similar dislocation densities for epilayers and substrates. Hence, hot-wall MOCVD is proposed as a prospective growth method to be further explored for the fabrication of beta-Ga2O3.
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| 5. |
- Kuhne, Philipp, 1981-, et al.
(författare)
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Advanced Terahertz Frequency-Domain Ellipsometry Instrumentation for In Situ and Ex Situ Applications
- 2018
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Ingår i: IEEE Transactions on Terahertz Science and Technology. - : Institute of Electrical and Electronics Engineers (IEEE). - 2156-342X. ; 8:3, s. 257-270
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Tidskriftsartikel (refereegranskat)abstract
- We present a terahertz (THz) frequency-domain spectroscopic ellipsometer design that suppresses formation of standing waves by use of stealth technology approaches. The strategy to suppress standing waves consists of three elements geometry, coating, and modulation. The instrument is based on the rotating analyzer ellipsometer principle and can incorporate various sample compartments, such as a superconducting magnet, in situ gas cells, or resonant sample cavities, for example. A backward wave oscillator and three detectors are employed, which permit operation in the spectral range of 0.1–1 THz (3.3–33 cm−1 or 0.4–4 meV). The THz frequency-domain ellipsometer allows for standard and generalized ellipsometry at variable angles of incidence in both reflection and transmission configurations. The methods used to suppress standing waves and strategies for an accurate frequency calibration are presented. Experimental results from dielectric constant determination in anisotropic materials, and free charge carrier determination in optical Hall effect (OHE), resonant-cavity enhanced OHE, and in situ OHE experiments are discussed. Examples include silicon and sapphire optical constants, free charge carrier properties of two-dimensional electron gas in a group III nitride high electron mobility transistor structure, and ambient effects on free electron mobility and density in epitaxial graphene.
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| 6. |
- Schubert, Mathias, 1966-, et al.
(författare)
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Longitudinal phonon plasmon mode coupling in β-Ga2O3
- 2019
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 114:10
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Tidskriftsartikel (refereegranskat)abstract
- In this letter, we investigate a set of n-type single crystals of monoclinic symmetry beta-Ga2O3 with different free electron concentration values by generalized far infrared and infrared spectroscopic ellipsometry. In excellent agreement with our previous model prediction, we find here by experiment that longitudinal-phonon-plasmon coupled modes are polarized either within the monoclinic plane or perpendicular to the monoclinic plane. As predicted, all modes change the amplitude and frequency with the free electron concentration. The most important observation is that all longitudinal-phonon-plasmon coupled modes polarized within the monoclinic plane continuously change their direction as a function of free electron concentration.
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| 7. |
- Schubert, Mathias, 1966-, et al.
(författare)
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Optical Hall effect-model description: tutorial
- 2016
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Ingår i: Optical Society of America. Journal A. - : OPTICAL SOC AMER. - 1084-7529 .- 1520-8532. ; 33:8, s. 1553-1568
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Tidskriftsartikel (refereegranskat)abstract
- The optical Hall effect is a physical phenomenon that describes the occurrence of magnetic-field-induced dielectric displacement at optical wavelengths, transverse and longitudinal to the incident electric field, and analogous to the static electrical Hall effect. The electrical Hall effect and certain cases of the optical Hall effect observations can be explained by extensions of the classic Drude model for the transport of electrons in metals. The optical Hall effect is most useful for characterization of electrical properties in semiconductors. Among many advantages, while the optical Hall effect dispenses with the need of electrical contacts, electrical material properties such as effective mass and mobility parameters, including their anisotropy as well as carrier type and density, can be determined from the optical Hall effect. Measurement of the optical Hall effect can be performed within the concept of generalized ellipsometry at an oblique angle of incidence. In this paper, we review and discuss physical model equations, which can be used to calculate the optical Hall effect in single- and multiple-layered structures of semiconductor materials. We define the optical Hall effect dielectric function tensor, demonstrate diagonalization approaches, and show requirements for the optical Hall effect tensor from energy conservation. We discuss both continuum and quantum approaches, and we provide a brief description of the generalized ellipsometry concept, the Mueller matrix calculus, and a 4 x 4 matrix algebra to calculate data accessible by experiment. In a follow-up paper, we will discuss strategies and approaches for experimental data acquisition and analysis. (C) 2016 Optical Society of America
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| 8. |
- Stokey, Megan, et al.
(författare)
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Infrared-active phonon modes and static dielectric constants in α-(AlxGa1−x)2O3 (0.18 ≤ x ≤ 0.54) alloys
- 2022
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 120:11
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Tidskriftsartikel (refereegranskat)abstract
- We determine the composition dependence of the transverse and longitudinal optical infrared-active phonon modes in rhombohedral α-(AlxGa1−x)2O3 alloys by far-infrared and infrared generalized spectroscopic ellipsometry. Single-crystalline high quality undoped thin-films grown on m-plane oriented α-Al2O3 substrates with x = 0.18, 0.37, and 0.54 were investigated. A single mode behavior is observed for all phonon modes, i.e., their frequencies shift gradually between the equivalent phonon modes of the isostructural binary parent compounds. We also provide physical model line shape functions for the anisotropic dielectric functions. We use the anisotropic high-frequency dielectric constants for polarizations parallel and perpendicular to the lattice c axis measured recently by Hilfiker et al. [Appl. Phys. Lett. 119, 092103 (2021)], and we determine the anisotropic static dielectric constants using the Lyddane–Sachs–Teller relation. The static dielectric constants can be approximated by linear relationships between those of α-Ga2O3 and α-Al2O3. The optical phonon modes and static dielectric constants will become useful for device design and free charge carrier characterization using optical techniques.
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