| 1. |
- Xu, Jiawei, et al.
(författare)
-
Modeling Cycle-to-Cycle Variation in Memristors for In-Situ Unsupervised Trace-STDP Learning
- 2024
-
Ingår i: IEEE Transactions on Circuits and Systems - II - Express Briefs. - : Institute of Electrical and Electronics Engineers (IEEE). - 1549-7747 .- 1558-3791. ; 71:2, s. 627-631
-
Tidskriftsartikel (refereegranskat)abstract
- Evaluating the computational accuracy of Spiking Neural Network (SNN) implemented as in-situ learning on large-scale memristor crossbars remains a challenge due to the lack of a versatile model for the variations in non-ideal memristors. This brief proposes a novel behavioral variation model along with a four-stage pipeline for physical memristors. The proposed variation model combines both absolute and relative variations. Therefore, it can better characterize different memristor cycle-to-cycle (C2C) variations in practice. The proposed variation model has been used to simulate the behavior of two physical memristors. Adopting the non-ideal memristor model, the trace-based spiking-timing dependent plasticity (STDP) unsupervised in-memristor learning system is simulated. Although the synaptic-level weight simulation shows a performance degradation of 7.99% and 4.07% increase in the relative root mean square error (RRMSE), the network-level simulation results show no accuracy loss on the MNIST benchmark. Furthermore, the impacts of absolute and relative C2C variations on network performance are simulated and analyzed through two sets of univariate experiments.
|
|
| 2. |
- Xu, Jiawei, et al.
(författare)
-
Optoelectronic memristor model for optical synaptic circuit of spiking neural networks
- 2023
-
Ingår i: 21st IEEE Interregional NEWCAS Conference, NEWCAS 2023. - : Institute of Electrical and Electronics Engineers (IEEE).
-
Konferensbidrag (refereegranskat)abstract
- Optoelectronic memristors are suitable candidates for hardware implementation of optical synapses in spiking neural networks (SNNs), thanks to their electrical and optical characteristics. To study the feasibility of memristor-based optical synapses in SNNs, a behavior model for optoelectronic memristors is proposed in this paper, including electrical programming modeling and photocurrent read modeling. Based on the model, the behavior of a molecular ferroelectric (MF)/semiconductor interfacial memristor is simulated. This paper also proposes an optical synaptic circuit for trace-based spike-timing-dependent plasticity (STDP) learning rule. The electrical characteristics of the memristor are explored and exploited to emulate the trace in the pairwise nearest-neighbor STDP, while the optical characteristics are utilized for non-destructive readout and weight calculation. Synaptic-level simulation results show a 99.96% correlation coefficient (CC) and a 1.91% relative root mean square error (RRMSE) in the weight approximate computation. Extending the simulation to the network level, the optoelectronic memristor-based unsupervised STDP learning system can achieve a 92.07± 0.64% accuracy on the MNIST benchmark.
|
|
