| 1. |
- Fülöp, Attila, 1988, et al.
(författare)
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Phase transition of bismuth telluride thin films grown by MBE
- 2014
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Ingår i: Applied Physics Express. - 1882-0786 .- 1882-0778. ; 7:4, s. Art. no. 045503-
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Tidskriftsartikel (refereegranskat)abstract
- A previously unreported phase transition between Bi2Te3 and Bi4Te3 in bismuth telluride grown by molecular beam epitaxy is recorded via XRD, AFM, and SIMS observations. This transition is found to be related to the Te/Bi beam equivalent pressure (BEP) ratio. BEP ratios below 17 favor the formation of Bi4Te3 while Bi2Te3 is formed at higher ratios. Transport measurements reveal that Bi2Te3 has higher electron mobility than Bi4Te3.
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| 2. |
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| 3. |
- Meng, Fantao, et al.
(författare)
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Nonlinear electrical properties of Si three-terminal junction devices
- 2010
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 97:24
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Tidskriftsartikel (refereegranskat)abstract
- This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics. (C) 2010 American Institute of Physics. [doi:10.1063/1.3526725]
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| 4. |
- Song, Yuxin, 1981, et al.
(författare)
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Growth of GaSb1-xBix by molecular beam epitaxy
- 2012
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Ingår i: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. - : American Vacuum Society. - 2166-2754 .- 2166-2746. ; 30:2, s. 02B114-
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Tidskriftsartikel (refereegranskat)abstract
- Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and enhancing Bi incorporation were studied. The Bi incorporation was confirmed by SIMS and RBS measurements. The Bi concentration in the samples was found to increase with increasing growth temperature and Bi flux. The position of GaSb1-xBix layer peak in XRD rocking curves is found to be correlated to Bi composition. Surface and structural properties of the samples were also investigated. Samples grown on GaSb and GaAs substrates were compared and no apparent difference for Bi incorporation was found.
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| 5. |
- Song, Yuxin, 1981, et al.
(författare)
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Molecular beam epitaxy growth of InSb1-xBix thin films
- 2013
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 378, s. 323-328
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Tidskriftsartikel (refereegranskat)abstract
- Molecular beam epitaxy growth for InSb1-xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are studied. Strong In and Ga inter-diffusion induced by Bi incorporation is observed and discussed.
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