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| 2. |
- Klionsky, Daniel J., et al.
(författare)
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Guidelines for the use and interpretation of assays for monitoring autophagy
- 2012
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Ingår i: Autophagy. - : Informa UK Limited. - 1554-8635 .- 1554-8627. ; 8:4, s. 445-544
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Forskningsöversikt (refereegranskat)abstract
- In 2008 we published the first set of guidelines for standardizing research in autophagy. Since then, research on this topic has continued to accelerate, and many new scientists have entered the field. Our knowledge base and relevant new technologies have also been expanding. Accordingly, it is important to update these guidelines for monitoring autophagy in different organisms. Various reviews have described the range of assays that have been used for this purpose. Nevertheless, there continues to be confusion regarding acceptable methods to measure autophagy, especially in multicellular eukaryotes. A key point that needs to be emphasized is that there is a difference between measurements that monitor the numbers or volume of autophagic elements (e.g., autophagosomes or autolysosomes) at any stage of the autophagic process vs. those that measure flux through the autophagy pathway (i.e., the complete process); thus, a block in macroautophagy that results in autophagosome accumulation needs to be differentiated from stimuli that result in increased autophagic activity, defined as increased autophagy induction coupled with increased delivery to, and degradation within, lysosomes (in most higher eukaryotes and some protists such as Dictyostelium) or the vacuole (in plants and fungi). In other words, it is especially important that investigators new to the field understand that the appearance of more autophagosomes does not necessarily equate with more autophagy. In fact, in many cases, autophagosomes accumulate because of a block in trafficking to lysosomes without a concomitant change in autophagosome biogenesis, whereas an increase in autolysosomes may reflect a reduction in degradative activity. Here, we present a set of guidelines for the selection and interpretation of methods for use by investigators who aim to examine macroautophagy and related processes, as well as for reviewers who need to provide realistic and reasonable critiques of papers that are focused on these processes. These guidelines are not meant to be a formulaic set of rules, because the appropriate assays depend in part on the question being asked and the system being used. In addition, we emphasize that no individual assay is guaranteed to be the most appropriate one in every situation, and we strongly recommend the use of multiple assays to monitor autophagy. In these guidelines, we consider these various methods of assessing autophagy and what information can, or cannot, be obtained from them. Finally, by discussing the merits and limits of particular autophagy assays, we hope to encourage technical innovation in the field.
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| 3. |
- Adnane, Bouchaib, et al.
(författare)
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Photoluminescence study of nanocrystalline-Si(Ge) embedded in mesoporous silica
- 2009
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 53:8, s. 862-864
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Tidskriftsartikel (refereegranskat)abstract
- Photoluminescence (PL) properties of mesoporous silica (MS) samples incorporated with Si or Ge nanocrystals (nc) have been investigated with various excitation powers and post-RTA processes. The analysis of experimental results revealed a superlinear intensity dependence (m = 1.7) in the MS reference sample without nanocrystals, while a sublinear behavior (m = 0.8) is observed for the nc-Si in MS. It thus suggests the same recombination responsible for the luminescence at similar to 2.75 eV for both samples, but different kinetic limitations for the carrier transfer processes. Si nanocrystals play in this case an important role in generating more photo-excited carriers, enhancing the PL intensity.
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| 4. |
- Bairagi, Samiran, et al.
(författare)
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Formation of quaternary Zn(AlxGa1−x)2O4 epilayers driven by thermally induced interdiffusion between spinel ZnGa2O4 epilayer and Al2O3 substrate
- 2023
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Ingår i: Materials Today Advances. - : Elsevier. - 2590-0498. ; 20
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Tidskriftsartikel (refereegranskat)abstract
- Zinc aluminogallate, Zn(AlxGa1−x)2O4 (ZAGO), a single-phase spinel structure, offers considerable potential for high-performance electronic devices due to its expansive compositional miscibility range between aluminum (Al) and gallium (Ga). Direct growth of high-quality ZAGO epilayers however remains problematic due to the high volatility of zinc (Zn). This work highlights a novel synthesis process for high-quality epitaxial quaternary ZAGO thin films on sapphire substrates, achieved through thermal annealing of a ZnGa2O4 (ZGO) epilayer on sapphire in an ambient air setting. In-situ annealing x-ray diffraction measurements show that the incorporation of Al in the ZGO epilayer commenced at 850 °C. The Al content (x) in ZAGO epilayer gradually increased up to around 0.45 as the annealing temperature was raised to 1100 °C, which was confirmed by transmission electron microscopy (TEM) and energy dispersive x-ray spectroscopy. X-ray rocking curve measurement revealed a small full width at half maximum value of 0.72 °, indicating the crystal quality preservation of the ZAGO epilayer with a high Al content. However, an epitaxial intermediate �–(AlxGa1−x)2O3 layer (� - AGO) was formed between the ZAGO and sapphire substrate. This is believed to be a consequence of the interdiffusion of Al and Ga between the ZGO thin film and sapphire substrate. Using density functional theory, the substitution cost of Ga in sapphire was determined to be about 0.5 eV lower than substitution cost of Al in ZGO. Motivated by this energetically favorable substitution, a formation mechanism of the ZAGO and AGO layers was proposed. Spectroscopic ellipsometry studies revealed an increase in total thickness of the film from 105.07 nm (ZGO) to 147.97 nm (ZAGO/AGO) after annealing to 1100 °C, which were corroborated using TEM. Furthermore, an observed increase in the direct (indirect) optical bandgap from 5.06 eV (4.7 eV) to 5.72 eV (5.45 eV) with an increasing Al content in the ZAGO layer further underpins the formation of a quaternary ZAGO alloy with a tunable composition.
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| 5. |
- Lu, Chan-Hung, et al.
(författare)
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beta-Ga2O3 MOSFETs electrical characteristic study of various etching depths grown on sapphire substrate by MOCVD
- 2023
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Ingår i: DISCOVER NANO. - : SPRINGER. - 2731-9229. ; 18:1
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Tidskriftsartikel (refereegranskat)abstract
- beta-Ga2O3 thin films with both a 45 nm Si-doped conductive epilayer and unintentionally doped epilayer were grown on c-plane sapphire substrate by metalorganic chemical vapor deposition. beta-Ga2O3 based metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated with gate recess depths of 20 nm and 40 nm (it indicated gate depth with 70 nm and 50 nm, respective), respectively, and without said recessing process. The conductivity of beta-Ga2O3 epilayers was improved through low in situ doping using a tetraethoxysilane precursor to increase MOSFET forward current density. After recessing, MOSFET operation was transferred from depletion to enhanced mode. In this study, the maximum breakdown voltage of the recessed 40 nm transistor was 770 V. The etching depth of a recessed-gate device demonstrates its influence on device electrical performance.
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| 6. |
- Shieh, Jia-Min, et al.
(författare)
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Enhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layer
- 2007
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Ingår i: Applied Physics Letters. - : American Institute of Physics. - 0003-6951 .- 1077-3118. ; 90:5
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Tidskriftsartikel (refereegranskat)abstract
- The authors report a two-terminal metal-oxide-semiconductor photodetector for which light is absorbed in a capping layer of silicon nanocrystals embedded in a mesoporous silica matrix on p-type silicon substrates. Operated at reverse bias, enhanced photoresponse from 300 to 700 nm was observed. The highest optoelectronic conversion efficiency is as high as 200%. The enhancements were explained by a transistorlike mechanism, in which the inversion layer acts as the emitter and trapped positive charges in the mesoporous dielectric layer assist carrier injection from the inversion layer to the contact, such that the primary photocurrent could be amplified.
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