| 1. |
- Grieser, M., et al.
(författare)
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Storage ring at HIE-ISOLDE Technical design report
- 2012
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Ingår i: The European Physical Journal Special Topics. - : Springer Science and Business Media LLC. - 1951-6355 .- 1951-6401. ; 207:1, s. 1-117
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Forskningsöversikt (refereegranskat)abstract
- We propose to install a storage ring at an ISOL-type radioactive beam facility for the first time. Specifically, we intend to setup the heavy-ion, low-energy ring TSR at the HIE-ISOLDE facility in CERN, Geneva. Such a facility will provide a capability for experiments with stored secondary beams that is unique in the world. The envisaged physics programme is rich and varied, spanning from investigations of nuclear ground-state properties and reaction studies of astrophysical relevance, to investigations with highly-charged ions and pure isomeric beams. The TSR might also be employed for removal of isobaric contaminants from stored ion beams and for systematic studies within the neutrino beam programme. In addition to experiments performed using beams recirculating within the ring, cooled beams can also be extracted and exploited by external spectrometers for high-precision measurements. The existing TSR, which is presently in operation at the Max-Planck Institute for Nuclear Physics in Heidelberg, is well-suited and can be employed for this purpose. The physics cases as well as technical details of the existing ring facility and of the beam and infrastructure requirements at HIE-ISOLDE are discussed in the present technical design report.
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| 2. |
- Grieser, M., et al.
(författare)
-
Storage ring at HIE-ISOLDE
- 2012
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Ingår i: European Physical Journal: Special Topics. - : Springer Science and Business Media LLC. - 1951-6401 .- 1951-6355. ; 207:1, s. 1-117
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Tidskriftsartikel (refereegranskat)abstract
- We propose to install a storage ring at an ISOL-type radioactive beam facility for the first time. Specifically, we intend to setup the heavy-ion, low-energy ring TSR at the HIE-ISOLDE facility in CERN, Geneva. Such a facility will provide a capability for experiments with stored secondary beams that is unique in the world. The envisaged physics programme is rich and varied, spanning from investigations of nuclear ground-state properties and reaction studies of astrophysical relevance, to investigations with highly-charged ions and pure isomeric beams. The TSR might also be employed for removal of isobaric contaminants from stored ion beams and for systematic studies within the neutrino beam programme. In addition to experiments performed using beams recirculating within the ring, cooled beams can also be extracted and exploited by external spectrometers for high-precision measurements. The existing TSR, which is presently in operation at the Max-Planck Institute for Nuclear Physics in Heidelberg, is well-suited and can be employed for this purpose. The physics cases as well as technical details of the existing ring facility and of the beam and infrastructure requirements at HIE-ISOLDE are discussed in the present technical design report.
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| 3. |
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| 4. |
- Jmerik, V. N., et al.
(författare)
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Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on mu-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE
- 2018
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Ingår i: Semiconductors (Woodbury, N.Y.). - : MAIK NAUKA/INTERPERIODICA/SPRINGER. - 1063-7826 .- 1090-6479. ; 52:5, s. 667-670
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Tidskriftsartikel (refereegranskat)abstract
- We report on a new approach to fabricate regular arrays of GaN nanorods (NRs) with InGaN QWs by plasma-assisted molecular-beam epitaxy (PA MBE) on micro-cone patterned sapphire substrates (mu-CPSSs). A two-stage PA MBE fabrication process of GaN NRs has been developed, starting with a high temperature nucleation layer growth at metal-rich conditions to aggregate selectively GaN nucleus on c-oriented areas of the mu-CPSSs and followed by growth of 1-mu m-thick GaN NRs at strongly nitrogen-rich conditions exactly on the cone tips. These results are explained by energetically favorable GaN growth on the (000 (1) over bar) oriented sapphire surface. Both micro-photoluminescence and micro-cathodoluminescence confirm the formation of regular array of optically and spectrally isolated NRs without usage of any nanolithography.
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| 5. |
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| 6. |
- Shubina, T. V., et al.
(författare)
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III-nitride microcrystal cavities with quasi whispering gallery modes grown by molecular beam epitaxy
- 2016
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Ingår i: Physica status solidi. B, Basic research. - : WILEY-V C H VERLAG GMBH. - 0370-1972 .- 1521-3951. ; 253:5, s. 845-852
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Tidskriftsartikel (refereegranskat)abstract
- This paper analyzes current trends in fabrication of III-nitride microresonators exploiting whispering gallery modes. Novel cup-cavities are proposed and their fabrication from GaN and InN by molecular beam epitaxy on patterned substrates is described. These cup-cavities can concentrate the mode energy in a subwavelength volume. Their mode energies are stable up to room temperature, being identical in large microcrystals. In these cavities, mode switching can be realized by means of refractive index variation. Cup-cavity modes, being inferior to plasmonic resonances in the respect of integral emission enhancement, have advantages for spectrally selective amplification of quantum transitions in site-controlled nano-emitters. (C) 2016 WILEY-VCH Verlag GmbH amp; Co. KGaA, Weinheim
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| 7. |
- Evropeytsev, E. A., et al.
(författare)
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Coexistence of type-I and type-II band line-ups in 1-2 monolayer thick GaN/AlN single quantum wells
- 2017
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Ingår i: 4TH INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2017). - : IOP PUBLISHING LTD.
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Konferensbidrag (refereegranskat)abstract
- GaN/AlN quantum wells (QWs) with varied nominal thickness of 0.5-4 monolayers have been studied by time-resolved photoluminescence (PL) spectroscopy. The structures demonstrate an emission peak with the thickness-dependent wavelength in the range 225-320 nm. The observed temporal behavior of PL between 225 and 280 nm can be described as a superposition of fast and slow decaying components with characteristic decay time constants of the order of 0.1-0.7 ns and 7-30 ns, respectively. The fast PL component with the decay time smaller than 1 ns dominates in the thicker GaN insertions and tends to vanish in the thinnest ones, where the slow PL component becomes progressively longer. These observations imply formation in the GaN/AlN monolayer-thick layers of an inhomogeneous excitonic system involving both direct and indirect in space excitons.
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| 8. |
- Kazanov, D. R., et al.
(författare)
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Ring resonator optical modes in InGaN/GaN structures grown on micro-cone-patterned sapphire substrates
- 2018
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Ingår i: 19TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS. - : IOP PUBLISHING LTD.
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Konferensbidrag (refereegranskat)abstract
- Molecular beam epitaxy (MBE) of III-nitride compounds on specially prepared cone-shaped patterned substrates is being actively developed nowadays, especially for nanophotonic applications. This type of substrates enables the successful growth of hexagonal nanorods (NRs). The insertion of an active quantum-sized region of InGaN inside a GaN NR allows us to enhance the rate of optical transitions by coupling them with resonant optical modes in the NR. However, we have observed the enhancement of emission not only from the NR but also around the circumference region of the cone-shaped base. We have studied this specific feature and demonstrated its impact on the output signal.
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| 9. |
- Monemar, Bo, 1942-, et al.
(författare)
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Optical signatures of dopants in GaN
- 2006
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Ingår i: Materials Science in Semiconductor Processing. - : Elsevier BV. - 1369-8001 .- 1873-4081. ; 9:1-3, s. 168-174
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Tidskriftsartikel (refereegranskat)abstract
- The characteristic optical spectra for shallow donors and acceptors in GaN are discussed. The most accurate photoluminescence (PL) data are obtained from samples grown on freestanding GaN substrates, where strain shifts are absent and a low spectroscopic line width is obtained. Recent PL data for excitons bound to the O and Si donors are discussed in some detail, giving accurate values for the binding energies and excited bound donor states. The Mg-acceptor is the most important one for p-doping, but the related optical spectra are controversial. We show that there are two acceptors present in Mg-doped GaN, with two different acceptor bound exciton peaks, and also two corresponding lower energy donor-acceptor pair spectra. We give tentative evidence for their interpretation. © 2006 Elsevier Ltd. All rights reserved.
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| 10. |
- Nechaev, D. V., et al.
(författare)
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Site-controlled GaN nanocolumns with InGaN insertions grown by MBE
- 2017
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Ingår i: 4TH INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2017). - : IOP PUBLISHING LTD.
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Konferensbidrag (refereegranskat)abstract
- The site-controlled plasma-assisted molecular beam epitaxy (PA MBE) has been developed to fabricate the regular array of GaN nanocolumns (NCs) with InGaN insertions on micro-cone patterned sapphire substrates (mu-CPSSs). Two-stage growth of GaN NCs, including a nucleation layer grown at metal-rich conditions and high temperature GaN growth in strong N-rich condition, has been developed to achieve the selective growth of the NCs. Micro-cathodoluminescence measurements have demonstrated pronounced emission from the InGaN insertions in 450-600 nm spectral range. The optically isolated NCs can be used as effective nano-emitters operating in the visible range.
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