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- Esteve, Romain, et al.
(författare)
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Electrical properties of MOS structures based on 3C-SiC(111) epilayers grown by Vapor-Liquid-Solid Transport and Chemical-Vapor Deposition on 6H-SiC(0001)
- 2010
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Ingår i: AIP Conference Proceedings. - : AIP Publishing. - 9780735408470 ; , s. 55-58
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Konferensbidrag (refereegranskat)abstract
- The electrical properties of post-oxidized PECVD oxides in wet oxygen based on 3C-SiC(111) epilayers grown by Vapor-Liquid-Solid and Chemical-Vapor-Deposition mechanisms on 6H-SiC(0001) have been studied. Different 6H-SiC(0001) samples exhibiting diverse crystal orientations (on-axis, 2 degrees off-axis) and growth conditions were regarded. A comparative study of oxide qualities has been carried out via capacitance and conductance measurements (C-G-V). Achieved interface traps densities and effective oxide charges were compared for the different samples. Reliability issues have been considered via current measurements (I-V and TZDB) and statistical data treatment techniques (Weibull plots). Oxides based on 3C-SiC layer grown by a process combining VLS and CVD methods demonstrated low interface states densities D-it of 1.2 x 10(10) eV(-1)cm(-2) at 0.63 eV below the conduction band and fixed oxide charges Q(eff)/(g) estimated to -0.1 x 10(11) cm(-2)
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