| 1. |
- Berg, Martin, et al.
(författare)
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InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers.
- 2014
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 25:48
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Tidskriftsartikel (refereegranskat)abstract
- Integration of III-V semiconductors on Si substrates allows for the realization of high-performance, low power III-V electronics on the Si-platform. In this work, we demonstrate the implementation of single balanced down-conversion mixer circuits, fabricated using vertically aligned InAs nanowire devices on Si. A thin, highly doped InAs buffer layer has been introduced to reduce the access resistance and serve as a bottom electrode. Low-frequency voltage conversion gain is measured up to 7 dB for a supply voltage of 1.5V. Operation of these mixers extends into the GHz regime with a [Formula: see text] cut-off frequency of 2 GHz, limited by the optical lithography system used. The circuit dc power consumption is measured at 3.9 mW.
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| 2. |
- Berg, Martin, et al.
(författare)
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Single Balanced Down-Conversion Mixer Utilizing Indium Arsenide Nanowire MOSFETs
- 2014
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Ingår i: 26th International Conference on Indium Phosphideand Related Materials (IPRM). - 1092-8669.
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Konferensbidrag (refereegranskat)abstract
- We have fabricated single balanced down-conversion mixer circuits using InAs nanowire MOSFETs as both active and passive devices. This is achieved by a combination of electron beam lithography and UV-lithography with a line width of 12 mu m. The circuits exhibit a low frequency voltage conversion gain of 6 dB, a -3 dB cutoff frequency of 2 GHz and a power consumption of 3.8 mW, while operating at a supply voltage of 1.5 V. The circuits retain circuit functionality even for a supply voltage of 1 V.
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| 3. |
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| 4. |
- Hallgren, Oskar, et al.
(författare)
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Enhanced ROCK1 dependent contractility in fibroblast from chronic obstructive pulmonary disease patients
- 2012
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Ingår i: Journal of Translational Medicine. - : Springer Science and Business Media LLC. - 1479-5876. ; 10
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Tidskriftsartikel (refereegranskat)abstract
- Background: During wound healing processes fibroblasts account for wound closure by adopting a contractile phenotype. One disease manifestation of COPD is emphysema which is characterized by destruction of alveolar walls and our hypothesis is that fibroblasts in the COPD lungs differentiate into a more contractile phenotype as a response to the deteriorating environment. Methods: Bronchial (central) and parenchymal (distal) fibroblasts were isolated from lung explants from COPD patients (n = 9) (GOLD stage IV) and from biopsies from control subjects and from donor lungs (n = 12). Tissue-derived fibroblasts were assessed for expression of proteins involved in fibroblast contraction by western blotting whereas contraction capacity was measured in three-dimensional collagen gels. Results: The basal expression of rho-associated coiled-coil protein kinase 1 (ROCK1) was increased in both centrally and distally derived fibroblasts from COPD patients compared to fibroblasts from control subjects (p < 0.001) and (p < 0.01), respectively. Distally derived fibroblasts from COPD patients had increased contractile capacity compared to control fibroblasts (p < 0.01). The contraction was dependent on ROCK1 activity as the ROCK inhibitor Y27632 dose-dependently blocked contraction in fibroblasts from COPD patients. ROCK1-positive fibroblasts were also identified by immunohistochemistry in the alveolar parenchyma in lung tissue sections from COPD patients. Conclusions: Distally derived fibroblasts from COPD patients have an enhanced contractile phenotype that is dependent on ROCK1 activity. This feature may be of importance for the elastic dynamics of small airways and the parenchyma in late stages of COPD.
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| 5. |
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| 6. |
- Lindström, Rickard O, et al.
(författare)
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En studie rörande nolltolerans mot förluster vid internationella insatser : Årlig redovisning från KKrVA Avd IV den 4 december 2013
- 2014
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Ingår i: Kungl Krigsvetenskapsakademiens Handlingar och Tidskrift. - 0023-5369. ; 1:Bihäfte:1
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- The Royal Swedish Academy of War Sciences, Division of Military Technology, presents its annual report on the theme "Zero Tolerance for Losses in International Operations". Focus has been on own personnel and losses by combat action.) The study primarily concerns the land arena and the time span 2020-2030. Weapons development continues. The availability of weapons – even advanced ones – increases, also for non-state belligerents. Zero tolerance will require more and more efficient protection solutions to be developed – and to be used to meet increasing threats. Available technology offers many options. Zero tolerance requires high skills of the planner and purchaser, to ensure long-term research and development, timely acquisition and training, and ability to understand potential, limitations, and to adjust tactics accordingly. Holistic systems thinking will be required before, during and after interventions, including staff recruitment, advanced leadership, adequate equipment and high quality training in order to be able to fulfil a difficult mission in the highly complex environment in which the operation will occur.
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| 7. |
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| 8. |
- Persson, Karl-Magnus, et al.
(författare)
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InAs nanowire MOSFET differential active mixer on Si-substrate
- 2014
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 50:9, s. 682-682
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Tidskriftsartikel (refereegranskat)abstract
- An active single balanced down-conversion mixer is implemented using InAs nanowire metal oxide semiconductor field effect transistors (MOSFETs) as both active devices and passive resistive loads. Circuits with 6 dB low-frequency voltage gain and a 3 dB bandwidth of 2 GHz are measured for a DC power consumption of 3.8 mW from a 1.5 V supply. The circuits are fabricated using contacts made with 12 μmline- width optical lithography.
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| 9. |
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| 10. |
- Persson, Karl-Magnus, et al.
(författare)
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Low-frequency noise in vertical InAs nanowire FETs
- 2010
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 31:5, s. 428-430
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Tidskriftsartikel (refereegranskat)abstract
- This letter presents dc characteristics and low-frequency noise (LFN) measurements on single vertical InAs nanowire MOSFETs with 35-nm gate length and HfO2 high-kappa dielectric. The average normalized transconductance for three devices is 0.16 S/mm, with a subthreshold slope of 130 mV/decade. At 10 Hz, the normalized noise power S-I/I-d(2) measures 7.3 x 10(-7) Hz(-1). Moreover, the material-dependent Hooge's parameter at room temperature is estimated to be 4.2 x 10(-3).
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