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- Kögler, R., et al.
(författare)
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Ion beam induced excess vacancies in Si and SiGe and related Cu gettering
- 2004
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Ingår i: Gettering And Defect Engineering In Semiconductor Technology. - 3908450829 ; , s. 587-592
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Konferensbidrag (refereegranskat)abstract
- Implantation-induced excess vacancies and the related Cu gettering was studied in Si and in the solid solution Si0.93Ge0.07. The excess vacancy and interstitial generation during normal and inclined ion implantation can be simulated by a simple binary collision process. The excess defects are shown to control the Cu gettering observed in Si after rapid thermal annealing at a temperature of 900degreesC. The vacancy concentration in the SiGe layer is higher than in Si. An additional vacancy concentration of about 3.15x10(18)cm(-3) was determined in the SiGe layer beside the implantation-generated excess vacancies. These vacancies are presumably incorporated by the SiGe layer deposition on Si substrate. Vacancies agglomerate and form cavities during annealing. The cavities in SiGe were found to be significantly larger than in Si.
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- Osterman, J, et al.
(författare)
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Techniques for depth profiling of dopants in 4H-SiC
- 2001
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Ingår i: SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000. ; , s. 559-562
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Konferensbidrag (refereegranskat)abstract
- Three different methods for measuring the depth distribution of dopants in 4H-SiC have been investigated: (I) Spreading Resistance profiling (SRP), (2) Scanning Capacitance Microscopy (SCM) and (3) Scanning Electron Microscopy (SEM). The investigated samples included p- and n-type epitaxial layers grown by vapor phase deposition with doping concentrations of 10(16)-10(20) cm(-3). Also p(+)n implanted profiles using a combination of Al and B multi-energy implantations were studied. All techniques were able to provide doping profiles qualitatively corresponding to secondary ion mass spectrometry (SIMS) data. The SRP results suggest a lower limit of the p-doping concentration below which the ohmic contact between the probe tip and sample becomes more Schottky-like. The magnitude of the SCM signal corresponds well to the chemical doping profile except in the depleted region surrounding the metallurgical junction of the p(+)n structure.
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- Peeva, A, et al.
(författare)
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Spatial distribution of cavities in silicon formed by ion implantation generated excess vacancies
- 2004
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 95:9, s. 4738-4741
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Tidskriftsartikel (refereegranskat)abstract
- The spatial distribution of nanosized cavities in silicon formed by high energy Ge ion implantation and annealing is determined. The cavities are directly observed by transmission electron microscopy without any metal decoration. They are shown to be the agglomerates of implantation-induced excess vacancies. The concentration depth profile of the vacancies bound in the cavities agrees well with the excess vacancy profile calculated for the implantation process. Almost all the generated excess vacancies agglomerate in cavities after annealing at 900 degreesC for 30 s. The vacancy profile shape coincides with the depth profile of Cu that was intentionally introduced in the cavity region. The perfect match of vacancy and Cu distribution indicates the cavities are the determining gettering centres for Cu atoms in ion implanted Si.
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- Persson, Per, et al.
(författare)
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On the nature of ion implantation induced dislocation loops in 4H-silicon carbide
- 2002
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 92:5, s. 2501-2505
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Tidskriftsartikel (refereegranskat)abstract
- Transmission electron microscopy was used to investigate B-11, C-12, N-14, Al-27, Si-28, and Ar-37 ion-implanted 4H-SiC epilayers and subsequent defect formation after high temperature annealing. During the annealing process extrinsic dislocation loops of interstitial type are formed on the SiC basal plane with a depth distribution roughly corresponding to the distribution of the implanted ions. The investigation reveals that in samples where the implanted ions are substituting for a position in the silicon sublattice, generating an excess of interstitial silicon, the dislocation loops are more readily formed than in a sample implanted with an ion substituting for carbon.
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- Romano-Rodriguez, A., et al.
(författare)
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Epitaxial growth of beta-SiC on ion-beam synthesized beta-SiC : Structural characterization
- 2000
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Ingår i: Silicon Carbide and Related Materials - 1999 Pts, 1 & 2. - : Trans Tech Publications Inc.. ; , s. 309-312
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Konferensbidrag (refereegranskat)abstract
- In this work we present for the first time, to our knowledge, the CVD epitaxial growth of β-SiC using an ion beam synthesized (IBS) β-SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 °C. The ion beam synthesized continuous layer is constituted by β-SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed.
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