| 1. |
- Adeleye, Damilola, et al.
(författare)
-
Mitigation of Phase Separation in High Ga Cu(In,Ga)S2 Absorbers to Achieve ∼ 1 Volt 15.6% Power Conversion Efficiency
- 2023
-
Ingår i: 2023 IEEE 50th Photovoltaic Specialists Conference (PVSC). - : Institute of Electrical and Electronics Engineers (IEEE). - 9781665460590 - 9781665460606
-
Konferensbidrag (refereegranskat)abstract
- The use of Cu(In,Ga)S2 as a top cell in tandem solar cell, despite having suitable properties for such an application, is hampered by a high open-circuit voltage (VOC) deficit. The deficit arises from a poor optoelectronic quality of the absorbers - engendered by phase separation - and the inadequate translation of the optoelectronic quality of the absorber into device VOC. In this work, we report the role of first stage substrate temperature in the mitigation of phase separation and optimized Cu-excess during growth in Cu(In,Ga)S2, which leads to reduced VOC deficit, resulting in a device with 15.6 % PCE with a VOC of ∼ 981 mV when completed with atomic layer deposited (Zn,Sn)O and Al:ZnMgO transparent conductive oxide.
|
|
| 2. |
- Sood, Mohit, et al.
(författare)
-
Low temperature (Zn,Sn)O deposition for reducing interface open-circuit voltage deficit to achieve highly efficient Se-free Cu(In,Ga)S2 solar cells
- 2022
-
Ingår i: Faraday discussions. - : Royal Society of Chemistry. - 1359-6640 .- 1364-5498. ; 239, s. 328-338
-
Tidskriftsartikel (refereegranskat)abstract
- Cu(In,Ga)S-2 holds the potential to become a prime candidate for use as the top cell in tandem solar cells owing to its tunable bandgap from 1.55 eV (CuInS2) to 2.50 eV (CuGaS2) and favorable electronic properties. Devices above 14% power conversion efficiency (PCE) can be achieved by replacing the CdS buffer layer with a (Zn,Mg)O or Zn(O,S) buffer layer. However, the maximum achievable PCE of these devices is limited by the necessary high heating temperatures during or after buffer deposition, as this leads to a drop in the quasi-Fermi level splitting (qFLs) and therefore the maximum achievable open-circuit voltage (V-OC). In this work, a low-temperature atomic layer deposited (Zn,Sn)O thin film is explored as a buffer layer to mitigate the drop in the qFLs. The devices made with (Zn,Sn)O buffer layers are characterized by calibrated photoluminescence and current-voltage measurements to analyze the optoelectronic and electrical characteristics. An improvement in the qFLs after buffer deposition is observed for devices prepared with the (Zn,Sn)O buffer deposited at 120 degrees C. Consequently, a device with a V-OC value above 1 V was achieved. A 14% PCE is externally measured and certified for the best solar cell. The results show the necessity of developing a low-temperature buffer deposition process to maintain and translate absorber qFLs to device V-OC.
|
|
